Patents by Inventor Jun-seong Kim

Jun-seong Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9257508
    Abstract: Transistors and methods of manufacturing the same may include a gate on a substrate, a channel layer having a three-dimensional (3D) channel region covering at least a portion of a gate, a source electrode over a first region of the channel layer, and a drain electrode over a second region of the channel layer.
    Type: Grant
    Filed: August 27, 2012
    Date of Patent: February 9, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chang-seung Lee, Joo-ho Lee, Yong-sung Kim, Jun-seong Kim, Chang-youl Moon
  • Publication number: 20150125082
    Abstract: A method of generating a saliency image, which includes: converting an input image into an input image of the first size and an input image of the second size; applying a saliency extraction scheme to the input image of the first size to generate a first saliency image; converting the first saliency image to the second size; extracting an area that satisfies a first condition from the converted first saliency image; determining an area of the input image of the second size that corresponds to the extracted area; and generating a second saliency image by multiplying an image generated by applying the saliency extraction scheme to the determined area, and the converted first saliency image.
    Type: Application
    Filed: October 30, 2014
    Publication date: May 7, 2015
    Inventors: Jong-hoon Won, Jun-seong Kim, Chang-su Kim, Kazuhiko Sugimoto, Masataka Hamada
  • Patent number: 8861080
    Abstract: Wire grid polarizers, methods of fabricating a wire grid polarizer and display panels including a wire grid polarizer are provided, the methods include preparing a mold having a lower surface in which a plurality of parallel fine grooves are formed, and arranging the mold on a transparent substrate. The plurality of parallel fine grooves are filled with a conductive liquid ink. A plurality of parallel conductive nano wires are formed on the transparent substrate by curing the conductive liquid ink. The mold is removed.
    Type: Grant
    Filed: January 16, 2012
    Date of Patent: October 14, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang-seung Lee, Jun-seong Kim, Ki-deok Bae
  • Publication number: 20130193412
    Abstract: Transistors and methods of manufacturing the same may include a gate on a substrate, a channel layer having a three-dimensional (3D) channel region covering at least a portion of a gate, a source electrode over a first region of the channel layer, and a drain electrode over a second region of the channel layer.
    Type: Application
    Filed: August 27, 2012
    Publication date: August 1, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chang-seung LEE, Joo-ho LEE, Yong-sung KIM, Jun-seong KIM, Chang-youl MOON
  • Publication number: 20120287507
    Abstract: Wire grid polarizers, methods of fabricating a wire grid polarizer and display panels including a wire grid polarizer are provided, the methods include preparing a mold having a lower surface in which a plurality of parallel fine grooves are formed, and arranging the mold on a transparent substrate. The plurality of parallel fine grooves are filled with a conductive liquid ink. A plurality of parallel conductive nano wires are formed on the transparent substrate by curing the conductive liquid ink. The mold is removed.
    Type: Application
    Filed: January 16, 2012
    Publication date: November 15, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chang-seung Lee, Jun-seong Kim, Ki-deok Bae
  • Patent number: 7915610
    Abstract: A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near the surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.
    Type: Grant
    Filed: November 10, 2009
    Date of Patent: March 29, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Myung-kwan Ryu, Jun-seong Kim, Sang-yoon Lee, Euk-che Hwang, Tae-sang Kim, Jang-yeon Kwon, Kyung-bae Park, Kyung-seok Son, Ji-sim Jung
  • Patent number: 7863111
    Abstract: Provided are a thin film transistor for display devices and a manufacturing method of the thin film transistor. The thin film transistor for display devices includes: a flexible substrate; a gate electrode layer formed on the flexible substrate; a first insulating layer formed on the flexible substrate and the gate electrode; a source and a drain formed on the first insulating layer; an active layer formed on the first insulating layer between the source and the drain; a second insulating layer formed on the first insulating layer, the source, the drain, and the active layer; and a drain electrode that opens the second insulating layer to be connected to the drain and is formed of a CNT dispersed conductive polymer.
    Type: Grant
    Filed: September 10, 2007
    Date of Patent: January 4, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jun-seong Kim, Euk-che Hwang, Ki-deok Bae, Chang-seung Lee, Hyeon-Jin Shin
  • Publication number: 20100051942
    Abstract: A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.
    Type: Application
    Filed: November 10, 2009
    Publication date: March 4, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Myung-kwan RYU, Jun-seong KIM, Sang-yoon LEE, Euk-che HWANG, Tae-sang KIM, Jang-yeon KWON, Kyung-bae PARK, Kyung-seok SON, Ji-sim JUNG
  • Patent number: 7638360
    Abstract: A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.
    Type: Grant
    Filed: December 19, 2007
    Date of Patent: December 29, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Myung-kwan Ryu, Jun-seong Kim, Sang-yoon Lee, Euk-che Hwang, Tae-sang Kim, Jang-yeon Kwon, Kyung-bae Park, Kyung-seok Son, Ji-sim Jung
  • Publication number: 20080283831
    Abstract: A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.
    Type: Application
    Filed: December 19, 2007
    Publication date: November 20, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Myung-kwan RYU, Jun-seong KIM, Sang-yoon LEE, Euk-che HWANG, Tae-sang KIM, Jang-yeon KWON, Kyung-bae PARK, Kyung-seok SON, Ji-sim JUNG
  • Publication number: 20080224128
    Abstract: Provided are a thin film transistor for display devices and a manufacturing method of the thin film transistor. The thin film transistor for display devices includes: a flexible substrate; a gate electrode layer formed on the flexible substrate; a first insulating layer formed on the flexible substrate and the gate electrode; a source and a drain formed on the first insulating layer; an active layer formed on the first insulating layer between the source and the drain; a second insulating layer formed on the first insulating layer, the source, the drain, and the active layer; and a drain electrode that opens the second insulating layer to be connected to the drain and is formed of a CNT dispersed conductive polymer.
    Type: Application
    Filed: September 10, 2007
    Publication date: September 18, 2008
    Inventors: Jun-seong Kim, Euk-che Hwang, Ki-deok Bae, Chang-seung Lee, Hyeon-Jin Shin
  • Publication number: 20080144173
    Abstract: A multi-display apparatus includes a plurality of panels connected to each other and displaying an image, wherein the plurality of panels comprise a top emission type display apparatus and a bottom emission type display apparatus, and the top emission type display apparatus and the bottom emission type display apparatus are connected to each other such that the top emission type display apparatus and the bottom emission type display apparatus emit light in a same direction, and the top emission type display apparatus and the bottom emission type display apparatus are arranged with a step difference therebetween such that pixel boundaries of adjacent side boundary surfaces of the top emission type display apparatus and of the bottom emission type display apparatus overlap each other.
    Type: Application
    Filed: August 2, 2007
    Publication date: June 19, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ki-deok Bae, Jun-seong Kim, Euk-che Hwang, Chan-bong Jun
  • Patent number: 7371487
    Abstract: A method of fabricating a black matrix of a color filter is provided. In the method, a black matrix layer formed of a hydrophobic organic material is formed on an upper surface of a transparent substrate. A black matrix is formed by patterning the black matrix layer. Side surfaces of the black matrix are made hydrophilic by irradiating a lower surface of the transparent substrate with ultraviolet rays while heating the black matrix. A black matrix provided by the method is also disclosed.
    Type: Grant
    Filed: August 16, 2006
    Date of Patent: May 13, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki-deok Bae, In-Sung Song, Chang-seung Lee, Jun-seong Kim, Sung-woong Kim, Wou-sik Kim
  • Publication number: 20070122721
    Abstract: A method of fabricating a black matrix of a color filter is provided. In the method, a black matrix layer formed of a hydrophobic organic material is formed on an upper surface of a transparent substrate. A black matrix is formed by patterning the black matrix layer. Side surfaces of the black matrix are made hydrophilic by irradiating a lower surface of the transparent substrate with ultraviolet rays while heating the black matrix. A black matrix provided by the method is also disclosed.
    Type: Application
    Filed: August 16, 2006
    Publication date: May 31, 2007
    Inventors: Ki-deok Bae, In-Sung Song, Chang-seung Lee, Jun-seong Kim, Sung-woong Kim, Wou-sik Kim