Abstract: A method of manufacturing a semiconductor device by using atomic layer deposition includes depositing a silicon atomic layer film on a semiconductor substrate. The method may also include forming an epitaxial silicon film on the silicon atomic layer film by using the silicon atomic layer film as a seed layer.

Abstract: A method of fabricating a semiconductor device using selective epitaxial growth (SEG) is disclosed. The method comprises; forming a seed window exposing a portion of a substrate through an interlayer insulating layer, growing a single crystal silicon SEG layer in the seed window using the exposed portion of the substrate as a seed, depositing an amorphous silicon layer on the interlayer insulating layer and in contact with the SEG layer, and performing an annealing process on the amorphous silicon layer over an annealing interval, and during the annealing interval applying microwave energy to the amorphous silicon layer.

Abstract: A method of forming an insulating layer on a silicon substrate in a process chamber is disclosed. The method comprises forming a nitride layer on the silicon substrate, and thereafter performing a thermal oxidation process on the silicon substrate and nitride layer, wherein the thermal oxidation process generates energized oxygen radicals penetrating the nitride layer, such that a lower silicon oxide layer is formed between the nitride layer and the silicon substrate, and such that an upper silicon oxide layer is simultaneously formed on an upper surface of the nitride layer.

Abstract: An apparatus and related manufacturing method for semiconductor devices are disclosed. A plasma generator is used to convert a plasma source into plasma. Plasma particles are then captured in plasma capsules formed from a protective layer, and introduced into a process chamber adapted to form a material layer on a semiconductor substrate using the plasma particles once they are liberated from the plasma capsules.

Abstract: An electrically erasable programmable read-only memory (EEPROM) cell transistor and a method of fabricating the EEPROM cell transistor are provided. The EEPROM cell transistor comprises a semiconductor substrate; a first tunnel oxide layer formed on the semiconductor substrate; and a first floating gate electrode formed on the first tunnel oxide layer and adapted to store charge that tunnels through the first tunnel oxide layer. The EEPROM cell transistor further comprises a second tunnel oxide layer formed on the first floating gate electrode; a second floating gate electrode formed on the second tunnel oxide layer and adapted to store charge that tunnels from the first floating gate electrode through the second tunnel oxide layer, wherein the second floating gate electrode is formed from a phase changeable material; a gate insulating layer formed on the second floating gate electrode; and a control gate electrode formed on the gate insulating layer.

Abstract: A method of fabricating a semiconductor device using selective epitaxial growth (SEG) is disclosed. The method comprises; forming a seed window exposing a portion of a substrate through an interlayer insulating layer, growing a single crystal silicon SEG layer in the seed window using the exposed portion of the substrate as a seed, depositing an amorphous silicon layer on the interlayer insulating layer and in contact with the SEG layer, and performing an annealing process on the amorphous silicon layer over an annealing interval, and during the annealing interval applying microwave energy to the amorphous silicon layer.

Abstract: A method of manufacturing a semiconductor device by using atomic layer deposition includes depositing a silicon atomic layer film on a semiconductor substrate. The method may also include forming an epitaxial silicon film on the silicon atomic layer film by using the silicon atomic layer film as a seed layer.

Abstract: A method of forming a high quality thin film on a semiconductor substrate includes supplying a first gas to change a crystal structure of a semiconductor substrate, and a second gas to form a thin film on the semiconductor substrate; sputtering the first gas in a plasma state to the semiconductor substrate to detach some of the atoms of the semiconductor substrate and concurrently, change a crystal structure of a surface of the semiconductor substrate; and forming a thin film on the semiconductor substrate by reacting the second gas as a reactant gas with the detached atoms and the atoms of the surface of the semiconductor substrate. An apparatus is also provided for performing this process.

Abstract: A method of thermally treating a semiconductor wafer is disclosed. The method comprises loading a wafer into a chamber, adjusting the vacuum pressure in the chamber, increasing the temperature of the wafer, and maintaining the vacuum pressure and temperature for a period of time sufficient to activate conductive impurities that were implanted in the wafer.

Abstract: An apparatus and a method of activating an impurity atom doped into a semiconductor material use of a resonant principle. Impurity atoms are doped into the semiconductor material, and microwaves having the same frequency as a natural frequency of vibration of the impurity are applied to the semiconductor material. The intensity of the vibrations of the impurity atom is increased by the resonant principle. Thus, a mean free path of the impurity atom is extended, so that the impurity atoms combine with a substance constituting the semiconductor material to create a carrier (free electrons or holes). Accordingly, only the impurity atoms in the region doped with the impurity are selectively activated, preventing the impurity from undesirably being introduced into another region, thereby improving an operating characteristic of the device.