Abstract: Disclosed is a secondary battery which can improve safety by forming a carbon coating layer and an electrode active material layer on an electrode plate such that ends of the carbon coating layer and the electrode active material layer are in different positions.

Abstract: A composite material for fire protection comprises: a) an inorganic fibre core comprising inorganic fibres interlocked or entangled to form a coherent body resistant against separation laminated between b) at least two layers of phyllosilicate insulation the material further comprising a barrier integral to the material to hinder ingress of humidity to edges of the inorganic fibre core.

Abstract: Disclosed are a liquid lens and a liquid lens module, which enhance the fill factor of a liquid lens having an inclined partition, thereby achieving a low drive voltage and a high fill factor. The liquid lens includes an oil layer and a conductive liquid inside a chamber having an inclined partition. The oil layer is formed of an oil mixture obtained by mixing at least two types of oils having different indices of refraction, and the oil mixture has the index of refraction corresponding to the index of refraction of the material in which the chamber is formed.

Abstract: Disclosed is a secondary battery which can improve safety by forming a carbon coating layer and an electrode active material layer on an electrode plate such that ends of the carbon coating layer and the electrode active material layer are in different positions.

Abstract: Disclosed are a liquid lens array based on an electrowetting method, a method of manufacturing the same, and a display device using the same. The display device includes a display panel configured to display an image. A liquid lens array of the display device is disposed at a side of the display panel, on which an image is displayed, and is capable of controlling an optical axis of a lens, which is formed by a shape between a first liquid and a second liquid, which is not mixed with the first liquid, filled therein be inclined to left and right sides by using an electrowetting phenomenon. A controller controls the optical axis of the lens formed by the shape between the first liquid and the second liquid to be inclined to left and right sides by applying a voltage to the liquid lens array.

Abstract: Disclosed are a liquid lens and a liquid lens module, which enhance the fill factor of a liquid lens having an inclined partition, thereby achieving a low drive voltage and a high fill factor. The liquid lens includes an oil layer and a conductive liquid inside a chamber having an inclined partition. The oil layer is formed of an oil mixture obtained by mixing at least two types of oils having different indices of refraction, and the oil mixture has the index of refraction corresponding to the index of refraction of the material in which the chamber is formed.

Abstract: A system and method of updating a key based on communication and security damage costs are provided. The key updating system for group communication between a plurality of group members, includes a key update cycle determining unit to determine a key update cycle based on a communication cost and a security damage cost, and a key updating unit to perform a key updating with respect to one or more group members of the group communication based on the determined key update cycle.

Abstract: Provided is a method for fabricating a photomask. The method includes the following processes. Light blocking patterns are formed on a mask substrate, and surface properties of the mask substrate on which the light blocking patterns are formed are changed into hydrophobicity. When the surface properties of the mask substrate are changed into the hydrophobicity, the mask substrate is treated using plasma gas. The plasma gas may be a gas mixture of trifluoromethane (CHF3), tetrafluoromethane (CF4), and hydrogen (H2).

Abstract: A system and method of updating a key based on communication and security damage costs are provided. The key updating system for group communication between a plurality of group members, includes a key update cycle determining unit to determine a key update cycle based on a communication cost and a security damage cost, and a key updating unit to perform a key updating with respect to one or more group members of the group communication based on the determined key update cycle.

Abstract: Provided is a method for fabricating a photomask. The method includes following processes. Light blocking patterns are formed on a mask substrate, and surface properties of the mask substrate on which the light blocking patterns are formed are changed into hydrophobicity. When the surface properties of the mask substrate are changed into the hydrophobicity, the mask substrate is treated using plasma gas. The plasma gas may be a gas mixture of trifluoromethane (CHF3), tetrafluoromethane (CF4), and hydrogen (H2).

Abstract: A nonvolatile ferroelectric memory device and a method for fabricating the same are provided that increase a process margin and simplify process steps. In addition, a number of masks is reduced to save the cost and at the same time minimize or reduce a layout area. The nonvolatile ferroelectric memory device can include first and second split wordlines formed along a first direction on a substrate at prescribed intervals, a first electrode of a first ferroelectric capacitor on the second split wordline and a first electrode of a second ferroelectric capacitor on the first split wordline, first and second ferroelectric layers respectively on surfaces of the first electrodes of the first and second ferroelectric capacitors, and second electrodes of the first and second ferroelectric capacitors, respectively, on surfaces of the first and second ferroelectric layers.

Abstract: A nonvolatile ferroelectric memory device and a method for fabricating the same are provided that increase a process margin and simplify process steps. In addition, a number of masks is reduced to save the cost and at the same time minimize or reduce a layout area. The nonvolatile ferroelectric memory device can include first and second split wordlines formed along a first direction on a substrate at prescribed intervals, a first electrode of a first ferroelectric capacitor on the second split wordline and a first electrode of a second ferroelectric capacitor on the first split wordline, first and second ferroelectric layers respectively on surfaces of the first electrodes of the first and second ferroelectric capacitors, and second electrodes of the first and second ferroelectric capacitors, respectively, on surfaces of the first and second ferroelectric layers.

Abstract: A nonvolatile ferroelectric memory device and a method for fabricating the same are provided that increase a process margin and simplify process steps. In addition, a number of masks is reduced to save the cost and at the same time minimize or reduce a layout area. The nonvolatile ferroelectric memory device can include first and second split wordlines formed along a first direction on a substrate at prescribed intervals, a first electrode of a first ferroelectric capacitor on the second split wordline and a first electrode of a second ferroelectric capacitor on the first split wordline, first and second ferroelectric layers respectively on surfaces of the first electrodes of the first and second ferroelectric capacitors, and second electrodes of the first and second ferroelectric capacitors, respectively, on surfaces of the first and second ferroelectric layers.

Abstract: A method for fabricating a capacitor of a semiconductor device is disclosed, in which loss of and damage to a lower electrode is minimized to improve process yield.

Abstract: A nonvolatile ferroelectric memory device and a method for manufacturing the same increase capacitance by ensuring an area of a capacitor to the maximum degree and simplify process steps by facilitating layout design.

Abstract: A nonvolatile ferroelectric memory device and a method for fabricating the same are provided that increase a process margin and simplify process steps. In addition, a number of masks is reduced to save the cost and at the same time minimize or reduce a layout area. The nonvolatile ferroelectric memory device can include first and second split wordlines formed along a first direction on a substrate at prescribed intervals, a first electrode of a first ferroelectric capacitor on the second split wordline and a first electrode of a second ferroelectric capacitor on the first split wordline, first and second ferroelectric layers respectively on surfaces of the first electrodes of the first and second ferroelectric capacitors, and second electrodes of the first and second ferroelectric capacitors, respectively, on surfaces of the first and second ferroelectric layers.

Abstract: A method for etching platinum in which used are an etch gas and a mask having a good etch ratio with platinum when a lower electrode is made of platinum is disclosed, including the steps of depositing a platinum layer on an insulator; depositing on the platinum layer a mask layer having a high selectivity with the platinum layer; patterning the mask layer to be spaced apart by a predetermined distance; and implanting an etch gas making an etch ratio of the platinum layer and the mask layer more than 2 to etch the platinum layer by using the mask layer.