Abstract: A quality control method for the preparation of dry compressed gas cylinder including passivating and/or preparing the compressed gas cylinder with the technique to be validated, filling the passivated/prepared compressed gas cylinder with gaseous carbon dioxide to a normal working pressure, wherein the gaseous carbon dioxide has a known ?18O isotope ratio, maintaining the pressurized gas cylinder at ambient temperature for a first predetermined period of time, and gradually emptying the pressurized gas cylinder, while simultaneously measuring the ?18O isotopic ratio, wherein a predetermined variation in the measured isotopic ratio of ?18O indicates a properly prepared cylinder.

Abstract: A quality control method for the preparation of dry compressed gas cylinder including passivating and/or preparing the compressed gas cylinder with the technique to be validated, filling the passivated/prepared compressed gas cylinder with gaseous carbon dioxide to a normal working pressure, wherein the gaseous carbon dioxide has a known ?18O isotope ratio, maintaining the pressurized gas cylinder at ambient temperature for a first predetermined period of time, and gradually emptying the pressurized gas cylinder, while simultaneously measuring the ?18O isotopic ratio, wherein a predetermined variation in the measured isotopic ratio of ?18O indicates a properly prepared cylinder.

Abstract: When a dry cleaning process is performed in a processing chamber by adding nitrogen monoxide (NO) gas to a cleaning gas, the handling is facilitated, and cleaning performance is improved. A substrate processing apparatus includes a processing vessel configured to process a substrate, a first cleaning gas supply system configured to pre-mix a gas containing fluorine atoms with the NO gas and supply the pre-mixed gas into the processing vessel, and a second cleaning gas supply system installed apart from the first cleaning gas supply system and configured to supply the fluorine-containing gas into the processing vessel.

Abstract: A cleaning method includes: providing a process container in which a process of forming a film on a substrate is performed; and removing a deposit including the film adhered to the process container by supplying a cleaning gas into the process container after performing the process. The act of removing the deposit includes generating a mixture gas of a fluorine-containing gas and a nitrosyl fluoride gas as the cleaning gas by mixture and reaction of the fluorine-containing gas and a nitrogen monoxide gas in a mixture part and supplying the mixture gas from the mixture part into the process container after removing exothermic energy generated by the reaction.

Abstract: Provided is a method of selectively etching a portion of silicon existing on a surface of a substrate to be processed, which includes: loading the substrate to be processed into a chamber; and supplying an FNO gas and an F2 gas that are diluted with an inert gas into the chamber such that the FNO gas and the F2 gas are reacted with the portion of silicon existing on the surface of the substrate to be processed.

Abstract: Provided is a method of selectively etching a portion of silicon existing on a surface of a substrate to be processed, which includes: loading the substrate to be processed into a chamber; and supplying an FNO gas and an F2 gas that are diluted with an inert gas into the chamber such that the FNO gas and the F2 gas are reacted with the portion of silicon existing on the surface of the substrate to be processed.

Abstract: A cleaning method includes: providing a process container in which a process of forming a film on a substrate is performed; and removing a deposit including the film adhered to the process container by supplying a cleaning gas into the process container after performing the process. The act of removing the deposit includes generating a mixture gas of a fluorine-containing gas and a nitrosyl fluoride gas as the cleaning gas by mixture and reaction of the fluorine-containing gas and a nitrogen monoxide gas in a mixture part and supplying the mixture gas from the mixture part into the process container after removing exothermic energy generated by the reaction.

Abstract: When a dry cleaning process is performed in a processing chamber by adding nitrogen monoxide (NO) gas to a cleaning gas, the handling is facilitated, and cleaning performance is improved. A substrate processing apparatus includes a processing vessel configured to process a substrate, a first cleaning gas supply system configured to pre-mix a gas containing fluorine atoms with the NO gas and supply the pre-mixed gas into the processing vessel, and a second cleaning gas supply system installed apart from the first cleaning gas supply system and configured to supply the fluorine-containing gas into the processing vessel.

Abstract: When a dry cleaning process is performed in a processing chamber by adding nitrogen monoxide (NO) gas to a cleaning gas, the handling is facilitated, and cleaning performance is improved. A substrate processing apparatus includes a processing vessel configured to process a substrate, a first cleaning gas supply system configured to pre-mix a gas containing fluorine atoms with the NO gas and supply the pre-mixed gas into the processing vessel, and a second cleaning gas supply system installed apart from the first cleaning gas supply system and configured to supply the fluorine-containing gas into the processing vessel.

Abstract: Methods and apparatus for the storage of acetylene include providing an acetylene storage device which has an interior volume. A carbonaceous adsorbent is disposed in the interior volume of the storage device, and acetylene is introduced into the storage device to be reversibly adsorbed by the carbonaceous adsorbent. A pressure of less than 2 bar is maintained in the storage device.

Abstract: When a dry cleaning process is performed in a processing chamber by adding nitrogen monoxide (NO) gas to a cleaning gas, the handling is facilitated, and cleaning performance is improved. A substrate processing apparatus includes a processing vessel configured to process a substrate, a first cleaning gas supply system configured to pre-mix a gas containing fluorine atoms with the NO gas and supply the pre-mixed gas into the processing vessel, and a second cleaning gas supply system installed apart from the first cleaning gas supply system and configured to supply the fluorine-containing gas into the processing vessel.

Abstract: A method of cleaning a film-forming apparatus to remove a silicon-based material deposited on a constituent member of the film-forming apparatus after being used to form thin films includes introducing a first gas including fluorine gas and a second gas including carbon monoxide gas into the film-forming apparatus, and heating the constituent member. The constituent member includes quartz or silicon carbide and the silicon-based material includes silicon nitride, or the constituent member includes silicon carbide and the silicon-based material includes silicon oxide.

Abstract: Disclosed are methods to remove residual fluorine left in a chamber surface without the use of a plasma device or temperature elevation. The disclosed methods may permit the next step in the deposition process to occur more quickly.

Abstract: To provide a method of cleaning a film forming apparatus capable of uniformly removing a deposit containing tantalum nitride, titanium nitride, tantalum, or titanium adhering to a wall of a processing chamber of the film forming apparatus at a high etching rate without use of plasma. A method of cleaning a film forming apparatus for removing a deposit containing tantalum nitride, titanium nitride, tantalum, or titanium deposited on a processing chamber of the film forming apparatus after it is used for forming a thin film made of tantalum nitride, titanium nitride, tantalum, or titanium, the cleaning method comprising: a step of supplying process gas containing fluorine gas into the processing chamber of the film forming apparatus; and a step of heating the processing chamber.

Abstract: Methods and apparatus for the storage of acetylene include providing an acetylene storage device which has an interior volume. A carbonaceous adsorbent is disposed in the interior volume of the storage device, and acetylene is introduced into the storage device to be reversibly adsorbed by the carbonaceous adsorbent. A pressure of less than 2 bar is maintained in the storage device.

Abstract: Methods and apparatus for cleaning undesired substances from a surface in a semiconductor processing chamber. A gas mixture containing a fluorine source and an oxygen source is pre-treated to contain active fluorine species. The pre-treated mixture is stored for a time in a gas storage device, and then introduced to a semiconductor processing chamber. Prior to introduction of the pre-treated gas, the temperature in the chamber is lowered to a temperature equal to or lower than the normal operating temperature. Undesired substances are removed or cleaned through chemical reaction with the pre-treated gas mixture, without the generation of a plasma or a high temperature condition in the chamber.

Abstract: Methods and apparatus for cleaning undesired substances from a surface in a semiconductor processing chamber. A gas mixture containing a fluorine source and an oxygen source is pre-treated to contain active fluorine species. The pre-treated mixture is stored for a time in a gas storage device, and then introduced to a semiconductor processing chamber. Prior to introduction of the pre-treated gas, the temperature in the chamber is lowered to a temperature equal to or lower than the normal operating temperature. Undesired substances are removed or cleaned through chemical reaction with the pre-treated gas mixture, without the generation of a plasma or a high temperature condition in the chamber.

Abstract: A method of cleaning a film-forming apparatus to remove a silicon-based material deposited on a constituent member of the film-forming apparatus after being used to form thin films includes introducing a first gas including fluorine gas and a second gas including carbon monoxide gas into the film-forming apparatus, and heating the constituent member. The constituent member includes quartz or silicon carbide and the silicon-based material includes silicon nitride, or the constituent member includes silicon carbide and the silicon-based material includes silicon oxide.

Abstract: To provide an apparatus for fluorine gas generation and supply that is disposed in the gas supply system of a semiconductor processing system and that in the event of abnormalities in the apparatus enables back up by a safe and inexpensive structure. An apparatus 30 for the generation and supply of gas is disposed in the gas supply system of a semiconductor processing system. This apparatus 30 contains an electrolytic cell 34 that generates fluorine gas and a cylinder 62 that holds a substitute gas selected from the group consisting of nitrogen fluoride, sulfur fluoride, and chlorine fluoride. The electrolytic cell 34 and cylinder 62 are connected to a gas switching section 56 that selectively supplies a gas utilization section with fluorine gas from the electrolytic cell 34 or with substitute gas from the cylinder 62.

Abstract: A method of cleaning a film-forming apparatus to remove at least a part of a silicon-based material deposited on a constituent member of the film-forming apparatus after used to form thin films includes introducing a first-gas including fluorine gas and a second gas including nitrogen monoxide gas into the film-forming apparatus, and heating the constituent member. The constituent member includes quartz or silicon carbide, and the silicon-based material includes silicon nitride.