Abstract: A memory repair device for detecting a fault cell in a memory and replacing it with a redundancy cell using a serial interface method is provided. The memory repair device include a repair information control block and at least one memory block including at least one memory. The repair information control block is configured to perform a built-in self-test (BIST) for each memory block, and when a fault cell is detected according to the BIST, receive and store repair information about the fault cell information. The memory block replaced the fault cell with a redundancy cell according to repair information loaded by the repair information control block at the time of operation of the memory. Data is transmitted and received between the repair information control block and the memory block using a serial interface.

Abstract: A memory repair device for detecting a fault cell in a memory and replacing it with a redundancy cell using a serial interface method is provided. The memory repair device include a repair information control block and at least one memory block including at least one memory. The repair information control block is configured to perform a built-in self-test (BIST) for each memory block, and when a fault cell is detected according to the BIST, receive and store repair information about the fault cell information. The memory block replaced the fault cell with a redundancy cell according to repair information loaded by the repair information control block at the time of operation of the memory. Data is transmitted and received between the repair information control block and the memory block using a serial interface.