Abstract: The present invention relates to a method and apparatus for growing sapphire single crystals, and more particularly to a method and apparatus for growing sapphire single crystals in which a high quality, long single crystal can be obtained within a short period of time upon the use of a long rectangular crucible and a long seed crystal extending in a c-axial direction. Use of the method and apparatus for growing sapphire single crystals according to the present invention can uniformly maintain the horizontal temperature at the inside of the crucible despite the use of a rectangular crucible, thereby obtaining a high-quality single crystal as well decreasing the possibility of a failure in the growth of the single crystal.

Abstract: This invention discloses a fabricating method of the Printed Circuit Board, comprising the steps of (a) laminating an RCF and a copper layer on the internal core via vacuum press; (b) performing a first curing process; (c) making via-holes and filling out the via-holes and coating the surface of the copper layer with copper plating; (d) preparing a mask layer having a window which exposes the surface of the RCF region for the definition of the cavity; (e) etching the RCF with the surface exposed either via the pumice process or via the wet blast process; and (f) removing the mask layer and performing a second curing process.

Abstract: A double metal cyanide catalyst of the present invention having a controlled reactivity for preparing a polyol, which contains an ether ligand having a molecular weight of less than 200 and a glycol ligand having a molecular weight of less than 200 can be used in the preparation of a polyol having a unsaturation degree suitable for direct use for producing a polyurethane having suitable properties.

Abstract: The present invention relates to a method and apparatus for growing sapphire single crystals, and more particularly to a method and apparatus for growing sapphire single crystals in which a high quality, long single crystal can be obtained within a short period of time upon the use of a long rectangular crucible and a long seed crystal extending in a c-axial direction. Use of the method and apparatus for growing sapphire single crystals according to the present invention can uniformly maintain the horizontal temperature at the inside of the crucible despite the use of a rectangular crucible, thereby obtaining a high-quality single crystal as well decreasing the possibility of a failure in the growth of the single crystal.

Abstract: A double metal cyanide catalyst of the present invention having a controlled reactivity for preparing a polyol, which contains an ether ligand having a molecular weight of less than 200 and a glycol ligand having a molecular weight of less than 200 can be used in the preparation of a polyol having a unsaturation degree suitable for direct use for producing a polyurethane having suitable properties.