Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type having a device forming region and an outside region, an impurity region of a second conductivity type formed in a surface layer portion of a first main surface in the device forming region, a field limiting region of a second conductivity type formed in the surface layer portion in the outside region and having a impurity concentration higher than that of the impurity region, and a well region of a second conductivity type formed in a region between the device forming region and the field limiting region in the surface layer portion in the outside region, having a bottom portion positioned at a second main surface side with respect to bottom portions of the impurity region and the field limiting region, and having a impurity concentration higher than that of the impurity region.

Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type having a device forming region and an outside region, an impurity region of a second conductivity type formed in a surface layer portion of a first main surface in the device forming region, a field limiting region of a second conductivity type formed in the surface layer portion in the outside region and having a impurity concentration higher than that of the impurity region, and a well region of a second conductivity type formed in a region between the device forming region and the field limiting region in the surface layer portion in the outside region, having a bottom portion positioned at a second main surface side with respect to bottom portions of the impurity region and the field limiting region, and having a impurity concentration higher than that of the impurity region.

Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type having a device forming region and an outside region, an impurity region of a second conductivity type formed in a surface layer portion of a first main surface in the device forming region, a field limiting region of a second conductivity type formed in the surface layer portion in the outside region and having a impurity concentration higher than that of the impurity region, and a well region of a second conductivity type formed in a region between the device forming region and the field limiting region in the surface layer portion in the outside region, having a bottom portion positioned at a second main surface side with respect to bottom portions of the impurity region and the field limiting region, and having a impurity concentration higher than that of the impurity region.

Abstract: A semiconductor device includes a semiconductor layer of first-conductivity-type that has a main surface and that includes an active region set at the main surface, a current detection region set at the main surface away from the active region, and a boundary region set in a region between the active region and the current detection region at the main surface, a first body region of second-conductivity-type formed in a surface layer portion of the main surface at the active region, a first trench gate structure formed in the main surface at the active region, a second body region of second-conductivity-type formed in the surface layer portion of the main surface at the current detection region, a second trench gate structure formed in the main surface at the current detection region, a well region of second-conductivity-type formed in the surface layer portion of the main surface at the boundary region, and a dummy trench gate structure formed in an electrically floating state in the main surface at the bound

Abstract: A method for manufacturing a semiconductor device is provided in which a semiconductor element that generates heat during operation is formed in an active region of a semiconductor substrate and a temperature sensitive diode sensor arranged to detect temperature is formed in a temperature sensitive diode region of the semiconductor substrate. The method includes: forming a polysilicon layer that composes the temperature sensitive diode sensor in the temperature sensitive diode region, forming a mask, and introducing impurities through the mask into the semiconductor substrate and the polysilicon layer. The mask has an element pattern having an element opening through which a region composing the semiconductor element is exposed in the active region, a diode pattern having a diode opening through which a portion of the temperature sensitive diode region is exposed, and a monitoring pattern provided within the diode pattern with a size smaller than that of the diode opening.

Abstract: A semiconductor device includes a semiconductor layer of first-conductivity-type that has a main surface and that includes an active region set at the main surface, a current detection region set at the main surface away from the active region, and a boundary region set in a region between the active region and the current detection region at the main surface, a first body region of second-conductivity-type formed in a surface layer portion of the main surface at the active region, a first trench gate structure formed in the main surface at the active region, a second body region of second-conductivity-type formed in the surface layer portion of the main surface at the current detection region, a second trench gate structure formed in the main surface at the current detection region, a well region of second-conductivity-type formed in the surface layer portion of the main surface at the boundary region, and a dummy trench gate structure formed in an electrically floating state in the main surface at the bound

Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type having a device forming region and an outside region, an impurity region of a second conductivity type formed in a surface layer portion of a first main surface in the device forming region, a field limiting region of a second conductivity type formed in the surface layer portion in the outside region and having a impurity concentration higher than that of the impurity region, and a well region of a second conductivity type formed in a region between the device forming region and the field limiting region in the surface layer portion in the outside region, having a bottom portion positioned at a second main surface side with respect to bottom portions of the impurity region and the field limiting region, and having a impurity concentration higher than that of the impurity region.

Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type, an impurity region of a second conductivity type formed in a surface layer portion of the semiconductor layer, a terminal region of the second conductivity type that is formed in the surface layer portion of the semiconductor layer along a peripheral edge of the impurity region and that has a second conductivity type impurity concentration higher than a second conductivity type impurity concentration of the impurity region, and a surface electrode that is formed on the semiconductor layer and that has a connection portion connected to the impurity region and to the terminal region.

Abstract: A semiconductor device includes a semiconductor layer of first-conductivity-type that has a main surface and that includes a boundary region set in a region between an active region and a current detection region at the main surface, a first body region of second-conductivity-type formed in a surface layer portion of the main surface at the active region, a first trench gate structure formed in the main surface at the active region, a second body region of the second-conductivity-type formed in the surface layer portion of the main surface at the current detection region, a second trench gate structure formed in the main surface at the current detection region, a well region of the second-conductivity-type formed in the surface layer portion of the main surface at the boundary region, and a dummy trench gate structure formed in an electrically floating state in the main surface at the boundary region.

Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type having a device forming region and an outside region, an impurity region of a second conductivity type formed in a surface layer portion of a first main surface in the device forming region, a field limiting region of a second conductivity type formed in the surface layer portion in the outside region and having a impurity concentration higher than that of the impurity region, and a well region of a second conductivity type formed in a region between the device forming region and the field limiting region in the surface layer portion in the outside region, having a bottom portion positioned at a second main surface side with respect to bottom portions of the impurity region and the field limiting region, and having a impurity concentration higher than that of the impurity region.

Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type having a device forming region and an outside region, an impurity region of a second conductivity type formed in a surface layer portion of a first main surface in the device forming region, a field limiting region of a second conductivity type formed in the surface layer portion in the outside region and having a impurity concentration higher than that of the impurity region, and a well region of a second conductivity type formed in a region between the device forming region and the field limiting region in the surface layer portion in the outside region, having a bottom portion positioned at a second main surface side with respect to bottom portions of the impurity region and the field limiting region, and having a impurity concentration higher than that of the impurity region.

Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type having a device forming region and an outside region, an impurity region of a second conductivity type formed in a surface layer portion of a first main surface in the device forming region, a field limiting region of a second conductivity type formed in the surface layer portion in the outside region and having a impurity concentration higher than that of the impurity region, and a well region of a second conductivity type formed in a region between the device forming region and the field limiting region in the surface layer portion in the outside region, having a bottom portion positioned at a second main surface side with respect to bottom portions of the impurity region and the field limiting region, and having a impurity concentration higher than that of the impurity region.

Abstract: A semiconductor device includes a semiconductor layer of first-conductivity-type that has a main surface and that includes an active region set at the main surface, a current detection region set at the main surface away from the active region, and a boundary region set in a region between the active region and the current detection region at the main surface, a first body region of second-conductivity-type formed in a surface layer portion of the main surface at the active region, a first trench gate structure formed in the main surface at the active region, a second body region of second-conductivity-type formed in the surface layer portion of the main surface at the current detection region, a second trench gate structure formed in the main surface at the current detection region, a well region of second-conductivity-type formed in the surface layer portion of the main surface at the boundary region, and a dummy trench gate structure formed in an electrically floating state in the main surface at the bound

Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type, an impurity region of a second conductivity type formed in a surface layer portion of the semiconductor layer, a terminal region of the second conductivity type that is formed in the surface layer portion of the semiconductor layer along a peripheral edge of the impurity region and that has a second conductivity type impurity concentration higher than a second conductivity type impurity concentration of the impurity region, and a surface electrode that is formed on the semiconductor layer and that has a connection portion connected to the impurity region and to the terminal region.

Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type having a device forming region and an outside region, an impurity region of a second conductivity type formed in a surface layer portion of a first main surface in the device forming region, a field limiting region of a second conductivity type formed in the surface layer portion in the outside region and having a impurity concentration higher than that of the impurity region, and a well region of a second conductivity type formed in a region between the device forming region and the field limiting region in the surface layer portion in the outside region, having a bottom portion positioned at a second main surface side with respect to bottom portions of the impurity region and the field limiting region, and having a impurity concentration higher than that of the impurity region.

Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type, an impurity region of a second conductivity type formed in a surface layer portion of the semiconductor layer, a terminal region of the second conductivity type that is formed in the surface layer portion of the semiconductor layer along a peripheral edge of the impurity region and that has a second conductivity type impurity concentration higher than a second conductivity type impurity concentration of the impurity region, and a surface electrode that is formed on the semiconductor layer and that has a connection portion connected to the impurity region and to the terminal region.

Abstract: A high-speed diode includes an n-type semiconductor layer and a p-type semiconductor layer which is laminated on the n-type semiconductor layer, where a pn junction is formed in a boundary portion between the n-type semiconductor layer and the p-type semiconductor layer, and crystal defects are formed such that the frequency of appearance is gradually decreased from the upper surface of the p-type semiconductor layer toward the bottom surface of the n-type semiconductor layer.

Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type, an impurity region of a second conductivity type formed in a surface layer portion of the semiconductor layer, a terminal region of the second conductivity type that is formed in the surface layer portion of the semiconductor layer along a peripheral edge of the impurity region and that has a second conductivity type impurity concentration higher than a second conductivity type impurity concentration of the impurity region, and a surface electrode that is formed on the semiconductor layer and that has a connection portion connected to the impurity region and to the terminal region.

Abstract: A high-speed diode includes an n-type semiconductor layer and a p-type semiconductor layer which is laminated on the n-type semiconductor layer, where a pn junction is formed in a boundary portion between the n-type semiconductor layer and the p-type semiconductor layer, and crystal defects are formed such that the frequency of appearance is gradually decreased from the upper surface of the p-type semiconductor layer toward the bottom surface of the n-type semiconductor layer.