Patents by Inventor Jun Tsutsumi
Jun Tsutsumi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11075614Abstract: A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate and including a penetration hole penetrating therethrough; a lower electrode and an upper electrode facing each other across at least a part of the piezoelectric film; and a protective film covering an upper surface of the piezoelectric film, a side surface of the piezoelectric film, and an inner surface of the penetration hole.Type: GrantFiled: October 27, 2017Date of Patent: July 27, 2021Assignee: TAIYO YUDEN CO., LTD.Inventors: Jun Tsutsumi, Takeshi Sakashita
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Patent number: 10763818Abstract: An acoustic wave device includes: a piezoelectric substrate; a comb-shaped electrode located on the piezoelectric substrate; a wiring layer located on the piezoelectric substrate and electrically connected with the comb-shaped electrode; a first insulating film located on the piezoelectric substrate, the first insulating film covering the comb-shaped electrode, having an aperture on the wiring layer, and being thicker than the comb-shaped electrode; a second insulating film covering an upper surface of the first insulating film and at least a part of a side surface of the first insulating film in the aperture and having a higher moisture resistance than the first insulating film; and a pad being in contact with the wiring layer exposed by the aperture.Type: GrantFiled: September 1, 2017Date of Patent: September 1, 2020Assignee: TAIYO YUDEN CO., LTD.Inventors: Takeshi Sakashita, Jun Tsutsumi
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Patent number: 10425060Abstract: An acoustic wave device includes: a piezoelectric substrate; a comb-shaped electrode that is located on the piezoelectric substrate and excites an acoustic wave; and a silicon oxide film that is located on the piezoelectric substrate so as to cover the comb-shaped electrode, and has a total concentration of carbon (C), hydrogen (H), nitrogen (N), and fluorine (F) equal to or less than 3.5 atomic %.Type: GrantFiled: October 21, 2016Date of Patent: September 24, 2019Assignee: TAIYO YUDEN CO., LTD.Inventors: Kentaro Nakamura, Fumiya Matsukura, Takashi Matsuda, Tsutomu Miyashita, Jun Tsutsumi
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Patent number: 10361678Abstract: An acoustic wave resonator includes: a piezoelectric substrate; and an IDT located on the piezoelectric substrate and including a pair of comb-shaped electrodes facing each other, each of the pair of comb-shaped electrodes including a grating electrode exciting an acoustic wave and a bus bar to which the grating electrode is connected, wherein an anisotropy coefficient in a cross region where the grating electrodes of the pair of comb-shaped electrodes cross each other is positive; an anisotropy coefficient in a gap region located between a tip of the grating electrode of one of the pair of comb-shaped electrodes and the bus bar of the other is less than the anisotropy coefficient in the cross region, and an acoustic velocity of an acoustic wave propagating through the gap region is equal to or less than an acoustic velocity of an acoustic wave propagating through the cross region at an antiresonant frequency.Type: GrantFiled: December 13, 2016Date of Patent: July 23, 2019Assignee: TAIYO YUDEN CO., LTD.Inventors: Masafumi Iwaki, Yoshio Satoh, Tabito Tanaka, Hidetaro Nakazawa, Takashi Matsuda, Jun Tsutsumi
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Patent number: 10355668Abstract: An acoustic wave device includes: a Y-cut X-propagation lithium tantalate substrate having a cut angle of 20° or more and 48° or less; and a grating electrode that is composed of one or more metal films laminated on the substrate, and excites an acoustic wave, wherein when a density of each metal film in the one or more metal films is represented by ?i, a Poisson's ratio of each metal film is represented by Pi, a film thickness of each metal film is represented by hi, a density of Cu is represented by ?0, a Poisson's ratio of Cu is represented by P0 and a pitch is represented by ?, a total value of “(hi/?)×(?i/?0)×(Pi/P0)” for each metal film with respect to the one or more metal films is more than 0.08.Type: GrantFiled: December 15, 2015Date of Patent: July 16, 2019Assignee: TAIYO YUDEN CO., LTD.Inventors: Masafumi Iwaki, Yoshio Sato, Tabito Tanaka, Hidetaro Nakazawa, Takashi Matsuda, Jun Tsutsumi
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Patent number: 10270425Abstract: An acoustic wave resonator includes: a piezoelectric substrate; and a pair of grating electrodes that is formed on the piezoelectric substrate, one of the pair of grating electrodes including a plurality of first electrode fingers having electric potentials equal to each other, another of the pair of grating electrodes including a plurality of second electrode fingers having electric potentials that differ from the electric potentials of the plurality of first electrode fingers and are equal to each other, two second electrode fingers of the plurality of second electrode fingers being located between at least a pair of adjacent first electrode fingers of the plurality of first electrode fingers, Pg differing from ?/4 where ? represents a wavelength of an acoustic wave excited by the plurality of first electrode fingers and the plurality of second electrode fingers and Pg represents a distance between centers of the two second electrode fingers.Type: GrantFiled: May 18, 2017Date of Patent: April 23, 2019Assignee: TAIYO YUDEN CO., LTD.Inventors: Masafumi Iwaki, Takashi Matsuda, Jun Tsutsumi
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Patent number: 10270424Abstract: An acoustic wave resonator includes: a piezoelectric substrate; an IDT located on the piezoelectric substrate and including comb-shaped electrodes facing each other, each of the comb-shaped electrodes including: electrode fingers exciting an acoustic wave; and a bus bar to which the electrode fingers are connected; a dielectric film located on the piezoelectric substrate in an overlap region, where the electrode fingers of one of the comb-shaped electrodes and the electrode fingers of the other overlap, so as to cover the electrode fingers; and an additional film located on the dielectric film in the overlap region and having a density greater than that of the dielectric film, and of which a film thickness in edge regions corresponding to both edges of the overlap region in an extension direction of the electrode fingers is greater than a film thickness in a central region sandwiched between the edge regions in the overlap region.Type: GrantFiled: March 7, 2017Date of Patent: April 23, 2019Assignee: TAIYO YUDEN CO., LTD.Inventors: Fumiya Matsukura, Kentaro Nakamura, Takashi Matsuda, Jun Tsutsumi, Junichi Hamasaki
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Patent number: 10256791Abstract: A resonant circuit includes: a capacitor of which a capacitance is variable; and an acoustic wave resonator to which the capacitor is connected in series and/or in parallel, a capacitance of the acoustic wave resonator being to be changed so that a change in input impedance and/or output impedance is reduced when the capacitance of the capacitor is changed.Type: GrantFiled: October 26, 2016Date of Patent: April 9, 2019Assignee: TAIYO YUDEN CO., LTD.Inventor: Jun Tsutsumi
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Patent number: 10193051Abstract: An acoustic wave device includes: an IDT provided on a piezoelectric substrate; and gratings provided on both sides of the IDT, wherein: a slowness surface of an acoustic wave has a concave shape; a duty ratio of electrode fingers of the gratings is larger than that of the electrode fingers of the IDT, or a thickness of the electrode fingers of the gratings is larger than that of the electrode fingers of the IDT, or a thickness of an added film provided on the electrode fingers of the gratings is larger than that of an added film provided on the electrode fingers of the IDT; a pitch of the electrode fingers of the gratings is smaller than that of the electrode fingers of the IDT; and a resonant frequency of the gratings is substantially the same as that of the IDT.Type: GrantFiled: May 5, 2015Date of Patent: January 29, 2019Assignee: TAIYO YUDEN CO., LTD.Inventor: Jun Tsutsumi
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Publication number: 20180145655Abstract: A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate and including a penetration hole penetrating therethrough; a lower electrode and an upper electrode facing each other across at least a part of the piezoelectric film; and a protective film covering an upper surface of the piezoelectric film, a side surface of the piezoelectric film, and an inner surface of the penetration hole.Type: ApplicationFiled: October 27, 2017Publication date: May 24, 2018Applicant: TAIYO YUDEN CO., LTD.Inventors: Jun TSUTSUMI, Takeshi SAKASHITA
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Publication number: 20180083593Abstract: An acoustic wave device includes: a piezoelectric substrate; a comb-shaped electrode located on the piezoelectric substrate; a wiring layer located on the piezoelectric substrate and electrically connected with the comb-shaped electrode; a first insulating film located on the piezoelectric substrate, the first insulating film covering the comb-shaped electrode, having an aperture on the wiring layer, and being thicker than the comb-shaped electrode; a second insulating film covering an upper surface of the first insulating film and at least a part of a side surface of the first insulating film in the aperture and having a higher moisture resistance than the first insulating film; and a pad being in contact with the wiring layer exposed by the aperture.Type: ApplicationFiled: September 1, 2017Publication date: March 22, 2018Applicant: TAIYO YUDEN CO., LTD.Inventors: Takeshi SAKASHITA, Jun TSUTSUMI
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Patent number: 9887343Abstract: An acoustic wave element includes: a piezoelectric substrate; an IDT (Interdigital Transducer) formed on the piezoelectric substrate; and an end face of the piezoelectric substrate that is formed on at least one end of the IDT in a propagation direction of an acoustic wave; wherein when a wavelength of the acoustic wave which the IDT excites is expressed by “?” and a metallization ratio of the IDT is expressed by “D”, a distance between an inner end of an electrode finger of the IDT nearest to the end face and the end face is equal to or more than 7?/16+D×?/4 and equal to or less than 3?/4+D×?/4.Type: GrantFiled: November 26, 2014Date of Patent: February 6, 2018Assignee: TAIYO YUDEN CO., LTD.Inventors: Jun Tsutsumi, Masafumi Iwaki, Kentaro Nakamura
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Publication number: 20170373669Abstract: An acoustic wave resonator includes: a piezoelectric substrate; and a pair of grating electrodes that is formed on the piezoelectric substrate, one of the pair of grating electrodes including a plurality of first electrode fingers having electric potentials equal to each other, another of the pair of grating electrodes including a plurality of second electrode fingers having electric potentials that differ from the electric potentials of the plurality of first electrode fingers and are equal to each other, two second electrode fingers of the plurality of second electrode fingers being located between at least a pair of adjacent first electrode fingers of the plurality of first electrode fingers, Pg differing from ?/4 where ? represents a wavelength of an acoustic wave excited by the plurality of first electrode fingers and the plurality of second electrode fingers and Pg represents a distance between centers of the two second electrode fingers.Type: ApplicationFiled: May 18, 2017Publication date: December 28, 2017Applicant: TAIYO YUDEN CO., LTD.Inventors: Masafumi IWAKI, Takashi MATSUDA, Jun TSUTSUMI
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Publication number: 20170279433Abstract: An acoustic wave resonator includes: a piezoelectric substrate; an IDT located on the piezoelectric substrate and including comb-shaped electrodes facing each other, each of the comb-shaped electrodes including: electrode fingers exciting an acoustic wave; and a bus bar to which the electrode fingers are connected; a dielectric film located on the piezoelectric substrate in an overlap region, where the electrode fingers of one of the comb-shaped electrodes and the electrode fingers of the other overlap, so as to cover the electrode fingers; and an additional film located on the dielectric film in the overlap region and having a density greater than that of the dielectric film, and of which a film thickness in edge regions corresponding to both edges of the overlap region in an extension direction of the electrode fingers is greater than a film thickness in a central region sandwiched between the edge regions in the overlap region.Type: ApplicationFiled: March 7, 2017Publication date: September 28, 2017Applicant: TAIYO YUDEN CO., LTD.Inventors: Fumiya MATSUKURA, Kentaro NAKAMURA, Takashi MATSUDA, Jun TSUTSUMI, Junichi HAMASAKI
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Patent number: 9742377Abstract: A filter includes: one or more series resonators that are connected in series between an input terminal and an output terminal; one or more parallel resonators that are connected in parallel between the input terminal and the output terminal; and a laterally coupled resonator that is connected in parallel with at least one of the one or more series resonators.Type: GrantFiled: April 22, 2015Date of Patent: August 22, 2017Assignee: TAIYO YUDEN CO., LTD.Inventors: Masafumi Iwaki, Jun Tsutsumi
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Publication number: 20170214389Abstract: A resonant circuit includes: a capacitor of which a capacitance is variable; and an acoustic wave resonator to which the capacitor is connected in series and/or in parallel, a capacitance of the acoustic wave resonator being to be changed so that a change in input impedance and/or output impedance is reduced when the capacitance of the capacitor is changed.Type: ApplicationFiled: October 26, 2016Publication date: July 27, 2017Applicant: TAIYO YUDEN CO., LTD.Inventor: Jun TSUTSUMI
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Publication number: 20170201232Abstract: An acoustic wave device includes: a piezoelectric substrate; a comb-shaped electrode that is located on the piezoelectric substrate and excites an acoustic wave; and a silicon oxide film that is located on the piezoelectric substrate so as to cover the comb-shaped electrode, and has a total concentration of carbon (C), hydrogen (H), nitrogen (N), and fluorine (F) equal to or less than 3.5 atomic %.Type: ApplicationFiled: October 21, 2016Publication date: July 13, 2017Applicant: TAIYO YUDEN CO., LTD.Inventors: Kentaro NAKAMURA, Fumiya MATSUKURA, Takashi MATSUDA, Tsutomu MIYASHITA, Jun TSUTSUMI
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Patent number: 9698755Abstract: A surface acoustic wave device includes: comb electrodes that are provided on a piezoelectric substrate, respectively has a plurality of electrode fingers, a plurality of dummy electrode fingers and a bus bar, edges of the electrode fingers of one of the comb electrodes facing the dummy electrode fingers of the other; and an added film that is provided at least under the bus bar of the comb electrodes and under the electrode fingers and the dummy electrode fingers in a first region and is not provided in a crossing region where the electrode fingers of the one of the comb electrodes and the electrode fingers of the other cross each other, the first region being a region between front edges of the dummy electrodes and edges of the dummy electrodes connected to the bus bar and extending in an alignment direction of the electrode fingers.Type: GrantFiled: March 24, 2015Date of Patent: July 4, 2017Assignee: TAIYO YUDEN CO., LTD.Inventors: Kentaro Nakamura, Hidetaro Nakazawa, Jun Tsutsumi
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Publication number: 20170170808Abstract: An acoustic wave resonator includes: a piezoelectric substrate; and an IDT located on the piezoelectric substrate and including a pair of comb-shaped electrodes facing each other, each of the pair of comb-shaped electrodes including a grating electrode exciting an acoustic wave and a bus bar to which the grating electrode is connected, wherein an anisotropy coefficient in a cross region where the grating electrodes of the pair of comb-shaped electrodes cross each other is positive; an anisotropy coefficient in a gap region located between a tip of the grating electrode of one of the pair of comb-shaped electrodes and the bus bar of the other is less than the anisotropy coefficient in the cross region, and an acoustic velocity of an acoustic wave propagating through the gap region is equal to or less than an acoustic velocity of an acoustic wave propagating through the cross region at an antiresonant frequency.Type: ApplicationFiled: December 13, 2016Publication date: June 15, 2017Applicant: TAIYO YUDEN CO., LTD.Inventors: Masafumi IWAKI, Yoshio SATOH, Tabito TANAKA, Hidetaro NAKAZAWA, Takashi MATSUDA, Jun TSUTSUMI
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Patent number: 9667226Abstract: A surface acoustic wave device includes: a pair of comb-type electrodes that are provided on a piezoelectric substrate and include electrode fingers and dummy electrode fingers, the electrode fingers of one of the pair of comb-type electrodes facing the dummy electrode fingers of the other comb-type electrode; and additional films that are provided to cover gaps between tip ends of the electrode fingers and tip ends of the dummy electrode fingers and to overlap with at least one of first through third groups in which the first and second groups respectively include the electrode fingers and the dummy electrode fingers located at opposite sides of the gaps in a first direction in which the electrode fingers extend, and the third group includes the electrode fingers located at sides of the gaps in a second direction that crosses the first direction.Type: GrantFiled: December 16, 2014Date of Patent: May 30, 2017Assignee: TAIYO YUDEN CO., LTD.Inventors: Hidetaro Nakazawa, Kentaro Nakamura, Shogo Inoue, Jun Tsutsumi, Takashi Matsuda