Patents by Inventor Jun W. Jo

Jun W. Jo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making a FET having a recessed gate structure
    Patent number: 5610090
    Abstract: A Field Effect Transistor having a recessed gate comprises a substrate, a source electrode and a drain electrode, a recessed channel region formed over an area of the semiconductor substrate between the source electrode and the drain electrode, and a gate electrode inclined toward the source electrode and formed over the recessed channel portion.
    Type: Grant
    Filed: January 22, 1996
    Date of Patent: March 11, 1997
    Assignee: Goldstar Co., Ltd.
    Inventor: Jun W. Jo