Patents by Inventor JUN-WEI PENG

JUN-WEI PENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10050156
    Abstract: A resistive memory element includes a P-type layer, a tunneling structure and an N-type layer. The tunneling structure is formed on the P-type layer. The N-type layer is formed on the tunneling structure. When a bias voltage higher than a reset voltage is applied to the P-type layer and the N-type layer, the resistive memory element is in a reset state. When the bias voltage lower than a set voltage is applied to the P-type layer and the N-type layer, the resistive memory element is in a set state.
    Type: Grant
    Filed: August 2, 2017
    Date of Patent: August 14, 2018
    Assignee: OPTO TECH CORPORATION
    Inventors: Yen-Kai Chang, Jun-Wei Peng, Lung-Han Peng
  • Patent number: 9972746
    Abstract: A substrate with a lithium imide layer, a LED with a lithium imide layer and a manufacturing method of the LED are provided. The substrate includes a lithium niobate layer and a lithium imide layer. The lithium imide layer is formed on a surface of the lithium niobate layer.
    Type: Grant
    Filed: February 2, 2017
    Date of Patent: May 15, 2018
    Assignee: OPTO TECH CORPORATION
    Inventors: Lung-Han Peng, Jiun-Yun Li, Jun-Wei Peng, Po-Yuan Chiu
  • Publication number: 20180062024
    Abstract: A substrate with a lithium imide layer, a LED with a lithium imide layer and a manufacturing method of the LED are provided. The substrate includes a lithium niobate layer and a lithium imide layer. The lithium imide layer is formed on a surface of the lithium niobate layer.
    Type: Application
    Filed: February 2, 2017
    Publication date: March 1, 2018
    Inventors: LUNG-HAN PENG, JIUN-YUN LI, JUN-WEI PENG, PO-YUAN CHIU