Abstract: Method for manufacturing a self-aligned T-type gate in which an ohmic electrode and a T-type gate electrode are simultaneously disposed and its excellent reproductivity is obtained and the overall process is simplified is disclosed, including the steps of: forming an insulating layer, a first metal layer, and a first photoresist layer and patterning the first photoresist layer; selectively removing the first metal layer such that the first metal layer under a pattern of the first photoresist layer is under-cut in a mesa form to form a gate pattern, and selectively removing the insulating layer such that the insulating layer under the first metal layer is under-cut in a same form as the first metal layer so as to pattern ohmic electrode regions; forming a second metal layer on the ohmic electrode regions to form ohmic electrodes and selectively removing the insulating layer to be unsymmetrical with respect to the center of the first metal layer; forming a second photoresist layer on the entire surface inclusiv