Abstract: A method of manufacturing a semiconductor package includes adding an insulating frame to a surface of a carrier substrate, wherein the insulating frame covers a side surface of a first metal layer on the surface of the carrier substrate and bringing a cover insulating layer into contact with the insulating frame and the first metal layer, wherein the cover insulating layer covers at least one semiconductor chip.

Abstract: A method of manufacturing a semiconductor package includes applying a cutter to a boundary between a main portion of a second metal layer and an edge portion of the second metal layer that surrounds the main portion, the second metal layer being on an upper surface of a first metal layer disposed on an upper surface of a carrier substrate, peeling the edge portion of the second metal layer from the first metal layer, forming a cover insulating layer on an upper surface of the main portion of the second metal layer, and disposing a semiconductor chip on an upper surface of the cover insulating layer.

Abstract: In fabricating a wiring structure, a first wiring is formed on a substrate. First and second light sensitive insulation layers that are reactive to light of first and second wavelength ranges, respectively, are sequentially formed on the first wiring. First and second exposing processes are performed using the light of the first and second wavelength ranges, respectively, to form first and second exposed portions in the first and second light sensitive insulation layers, respectively. The first and second exposed portions are removed by a developing process to form a hole and an opening, respectively. The hole and the opening extend through the first and second light sensitive insulation layers, respectively, to be connected to one another. A conductive layer is formed in the hole and in the opening, and is planarized to form a first via and a second wiring in the hole and in the opening, respectively.

Abstract: A semiconductor device including a semiconductor chip having a first surface and a second surface opposite to the first surface, a first heat dissipation member on the second surface of the semiconductor chip, the first heat dissipation member having a vertical thermal conductivity in a direction perpendicular to the second surface, and a horizontal thermal conductivity in a direction parallel to the second surface, the first vertical thermal conductivity being smaller than the first horizontal thermal conductivity, and a second heat dissipation member comprising a vertical pattern penetrating the first heat dissipation member, the second heat dissipation member having a vertical thermal conductivity that is greater than the vertical thermal conductivity of the first heat dissipation member may be provided.

Abstract: A semiconductor device including a semiconductor chip having a first surface and a second surface opposite to the first surface, a first heat dissipation member on the second surface of the semiconductor chip, the first heat dissipation member having a vertical thermal conductivity in a direction perpendicular to the second surface, and a horizontal thermal conductivity in a direction parallel to the second surface, the first vertical thermal conductivity being smaller than the first horizontal thermal conductivity, and a second heat dissipation member comprising a vertical pattern penetrating the first heat dissipation member, the second heat dissipation member having a vertical thermal conductivity that is greater than the vertical thermal conductivity of the first heat dissipation member may be provided.

Abstract: A package module includes a core structure including a dummy member, one or more electronic components disposed around the dummy member, and an insulating material covering at least a portion of each of the dummy member and the electronic components, the core structure including a first penetration hole passing through the dummy member and the insulating material, a semiconductor chip disposed in the first penetration hole and having an active surface on which a connection pad is disposed and an inactive surface, an encapsulant covering at least a portion of each of the core structure and the semiconductor chip and filling at least a portion of the first penetration hole, and a connection structure disposed on the core structure and the active surface and including a redistribution layer electrically connected to the electronic components and the connection pad.

Abstract: A semiconductor device including a semiconductor chip having a first surface and a second surface opposite to the first surface, a first heat dissipation member on the second surface of the semiconductor chip, the first heat dissipation member having a vertical thermal conductivity in a direction perpendicular to the second surface, and a horizontal thermal conductivity in a direction parallel to the second surface, the first vertical thermal conductivity being smaller than the first horizontal thermal conductivity, and a second heat dissipation member comprising a vertical pattern penetrating the first heat dissipation member, the second heat dissipation member having a vertical thermal conductivity that is greater than the vertical thermal conductivity of the first heat dissipation member may be provided.

Abstract: A package module includes a core structure including a dummy member, one or more electronic components disposed around the dummy member, and an insulating material covering at least a portion of each of the dummy member and the electronic components, the core structure including a first penetration hole passing through the dummy member and the insulating material, a semiconductor chip disposed in the first penetration hole and having an active surface on which a connection pad is disposed and an inactive surface, an encapsulant covering at least a portion of each of the core structure and the semiconductor chip and filling at least a portion of the first penetration hole, and a connection structure disposed on the core structure and the active surface and including a redistribution layer electrically connected to the electronic components and the connection pad.

Abstract: A semiconductor device has a first semiconductor die stacked over a second semiconductor die which is mounted to a temporary carrier. A plurality of bumps is formed over an active surface of the first semiconductor die around a perimeter of the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die and carrier. A plurality of conductive vias is formed through the encapsulant around the first and second semiconductor die. A portion of the encapsulant and a portion of a back surface of the first and second semiconductor die is removed. An interconnect structure is formed over the encapsulant and the back surface of the first or second semiconductor die. The interconnect structure is electrically connected to the conductive vias. The carrier is removed. A heat sink or shielding layer can be formed over the encapsulant and first semiconductor die.

Abstract: A semiconductor device has a first semiconductor die stacked over a second semiconductor die which is mounted to a temporary carrier. A plurality of bumps is formed over an active surface of the first semiconductor die around a perimeter of the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die and carrier. A plurality of conductive vias is formed through the encapsulant around the first and second semiconductor die. A portion of the encapsulant and a portion of a back surface of the first and second semiconductor die is removed. An interconnect structure is formed over the encapsulant and the back surface of the first or second semiconductor die. The interconnect structure is electrically connected to the conductive vias. The carrier is removed. A heat sink or shielding layer can be formed over the encapsulant and first semiconductor die.

Abstract: A semiconductor device has a first semiconductor die stacked over a second semiconductor die which is mounted to a temporary carrier. A plurality of bumps is formed over an active surface of the first semiconductor die around a perimeter of the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die and carrier. A plurality of conductive vias is formed through the encapsulant around the first and second semiconductor die. A portion of the encapsulant and a portion of a back surface of the first and second semiconductor die is removed. An interconnect structure is formed over the encapsulant and the back surface of the first or second semiconductor die. The interconnect structure is electrically connected to the conductive vias. The carrier is removed. A heat sink or shielding layer can be formed over the encapsulant and first semiconductor die.

Abstract: An integrated circuit package system includes an in-line strip, attaching an integrated circuit die over the in-line strip, and applying a molding material with a molded segment having a molded strip protrusion formed therefrom over the in-line strip.

Abstract: An integrated circuit package system includes a trace frame includes: an encapsulant; a first series of bonding pads along a length of the encapsulant; a second series of the bonding pads along a width of the encapsulant; conductive traces for connecting the bonding pads of the first series to the bonding pads of the second series in a one to one correspondence; and a first integrated circuit die on the encapsulant and on the conductive traces that extend beyond the first integrated circuit die.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a substrate having a substrate-interconnect; mounting an integrated circuit above and to the substrate; mounting an internal interconnect to the substrate-interconnect; mounting a structure having an integral-interposer-structure over the substrate and over the integrated circuit with the integral-interposer-structure connected to the internal interconnect; and encapsulating the internal interconnect and the integrated circuit with an encapsulation.

Abstract: A method for manufacture of an integrated circuit package system includes: providing a leadframe with an integrated circuit mounted thereover; encapsulating the integrated circuit with an encapsulation; mounting an etch barrier below the leadframe; and etching the leadframe.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a first terminal; connecting an integrated circuit to the first terminal; forming a second terminal connected over the first terminal and the integrated circuit by a vertical conductive post integral with the first terminal or the second terminal; and encapsulating the integrated circuit and the vertical conductive post leaving portions of the first terminal and the second terminal exposed.

Abstract: A method of manufacture of a semiconductor packaging system includes: providing a substrate; mounting a semiconductor chip to the substrate; mounting a pillar ball having a ball height electrically connected to the substrate; mounting an interposer above the semiconductor chip and electrically connected to the pillar ball; and wherein: mounting the interposer or mounting the substrate includes connecting the pillar ball to a pillar base having a base height substantially less than the ball height of the pillar ball and the pillar base having vertical sides not covered by the pillar ball.

Abstract: An integrated circuit package system includes a trace frame includes: an encapsulant; a first series of bonding pads along a length of the encapsulant; a second series of the bonding pads along a width of the encapsulant; conductive traces for connecting the bonding pads of the first series to the bonding pads of the second series in a one to one correspondence; and a first integrated circuit die on the encapsulant and on the conductive traces that extend beyond the first integrated circuit die.

Abstract: A method for manufacturing a package system includes: providing a first semiconductor die; mounting a second semiconductor die on the first semiconductor die using an inter-die interconnect to form a flip-chip assembly; and attaching the flip-chip assembly on a package substrate with a contact pad, a test connection, a z-bond pad, and a die receptacle, with the first semiconductor die in the flip-chip assembly fitting inside the die receptacle.

Abstract: An integrated circuit package system comprising forming a trace frame including: fabricating a sacrificial substrate; forming a first series of bonding pads along a length of the sacrificial substrate; forming a second series of the bonding pads along a width of the sacrificial substrate; forming conductive traces for connecting the bonding pads of the first series to the bonding pads of the second series in a one to one correspondence; and removing the sacrificial substrate.