Patents by Inventor Jun-Woong Park

Jun-Woong Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of Forming Semiconductor Devices
    Publication number: 20120214296
    Abstract: Provided are a semiconductor device and a method of forming the same. The method may include forming a metal oxide layer on a substrate and forming a sacrificial oxide layer on the metal oxide layer. An annealing process is performed on the substrate. A formation-free energy of the sacrificial oxide layer is greater than a formation-free energy of the metal oxide layer at a process temperature of the annealing process.
    Type: Application
    Filed: April 27, 2012
    Publication date: August 23, 2012
    Inventors: Sangjin Hyun, Siyoung Choi, Yugyun Shin, Kang-Ill Seo, Hagju Cho, Hoonjoo Na, Hyosan Lee, Jun-Woong Park, Hye-Lan Lee, Hyung-Seok Hong
  • Methods of forming semiconductor devices
    Patent number: 8183141
    Abstract: Provided are a semiconductor device and a method of forming the same. The method may include forming a metal oxide layer on a substrate and forming a sacrificial oxide layer on the metal oxide layer. An annealing process is performed on the substrate. A formation-free energy of the sacrificial oxide layer is greater than a formation-free energy of the metal oxide layer at a process temperature of the annealing process.
    Type: Grant
    Filed: October 19, 2009
    Date of Patent: May 22, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sangjin Hyun, Siyoung Choi, Yugyun Shin, Kang-Ill Seo, Hagju Cho, Hoonjoo Na, Hyosan Lee, Jun-Woong Park, Hye-Lan Lee, Hyung-Seok Hong
  • Methods of Forming Semiconductor Devices
    Publication number: 20100099245
    Abstract: Provided are a semiconductor device and a method of forming the same. The method may include forming a metal oxide layer on a substrate and forming a sacrificial oxide layer on the metal oxide layer. An annealing process is performed on the substrate. A formation-free energy of the sacrificial oxide layer is greater than a formation-free energy of the metal oxide layer at a process temperature of the annealing process.
    Type: Application
    Filed: October 19, 2009
    Publication date: April 22, 2010
    Inventors: Sangjin Hyun, Siyoung Choi, Yugyun Shin, Kang-III Seo, Hagju Cho, Hoonjoo Na, Hyosan Lee, Jun-Woong Park, Hye-Lan Lee, Hyung-Seok Hong