Abstract: The present disclosure provides a semiconductor device and a manufacturing method therefor. The method includes: providing a semiconductor structure, the semiconductor structure including a semiconductor substrate, a gate disposed on the semiconductor substrate, and an interlayer dielectric layer covering the semiconductor substrate and the gate; wherein the semiconductor structure further includes a first source/drain region and a second source/drain region; defining first connecting holes and at least one first air hole on the first source/drain region and/or the second source/drain region; wherein at least one first air hole is arranged between each adjacent two first connecting holes in an X direction and/or a Y direction, the X direction being a gate length direction, the X direction being perpendicular to the Y direction; sealing each first air hole to define a first cavity in the first air hole; and filling each first connecting hole with a conductive material.

Abstract: A device for manufacturing a storage container by integrally winding multiple bundles of fibers in a double-layer spiral circumferential direction. The device includes a rotary drive unit and two radial slide drive units provided at two sides of the rotary drive unit, each of the two radial slide drive units is provided with several spiral winding guide wire tubes in a circumferential array and drives the spiral winding guide wire tubes to perform a radial telescopic movement, the rotary drive unit drives the spiral winding guide wire tubes on the two radial slide drive units to perform a rotation movement, the rotary drive unit is connected to the two radial slide drive units by means of brackets, and a rack plate is connected to one side of each of the two radial slide drive units away from the rotary drive unit.

Abstract: A reasonable millisecond time control method for excavation blasting of a tunnel is provided, and includes: acquiring physical mechanical parameters to establish a millisecond blasting model, and designing four dimensions blasting parameters of explosive quantity, hole number, inter-hole millisecond and inter-row millisecond; simulating, based on the millisecond blasting model, a blasting process of an explosive package using blasting parameters to obtain a blasting vibration curve; obtaining single-hole blasting vibration waveforms, solving a vibration synthesis curve through a vibration synthesis theory; comparing the vibration synthesis curve with the blasting vibration curve to obtain a coupling relationship of blasting parameters; determining a target group of explosive quantity and hole numbers, determining a target millisecond through the coupling relationship of blasting parameters, and relating a millisecond blasting control strategy to control, and it is used for tunneling project to reduce cut blas

Abstract: The present application relates to a field of anti-corrosion coating, in particular, relates to an aspartic polyurea coating including a polyaspartic acid ester: 36%-60%; a ketoimine: 4%-8%; a dispersant: 0.5%-1.0%; an organotin catalyst: 0.1%-0.2%; a titanium white powder: 0%-48%; a thixotropic agent: 0.2%-1.0%; a leveling agent: 0.05%-0.3%; an antifoamer: 0.1%-1.0%; an antiager: 0%-3.0%; a coupling agent: 0%-5%; a diluent: 0%-10% and component B isocyanate curing agent.

Abstract: Techniques described herein relate to methods, apparatus, and systems for promoting adhesion between a substrate and a metal-containing photoresist. For instance, the method may include receiving the substrate in a reaction chamber, the substrate having a first material exposed on its surface, the first material including a silicon-based material and/or a carbon-based material; generating a plasma from a plasma generation gas source that is substantially free of silicon, where the plasma includes chemical functional groups; exposing the substrate to the plasma to modify the surface of the substrate by forming bonds between the first material and chemical functional groups from the plasma; and depositing the metal-containing photoresist on the modified surface of the substrate, where the bonds between the first material and the chemical functional groups promote adhesion between the substrate and the metal-containing photoresist.

Abstract: A method for selectively etching layers of a first material with respect to layers of a second material in a stack is provided. The layers of the first material are partially etched with respect to the layers of the second material. A deposition layer is selectively deposited on the stack, wherein portions of the deposition layer covering the layers of the second material are thicker than portions covering the layers of the first material, the selective depositing comprising providing a first reactant, purging some of the first reactant, wherein some undeposited first reactant is not purged, and providing a second reactant, wherein the undeposited first reactant combines with the second reactant and selectively deposits on the layers of the second material with respect to the layers of the first material. The layers of the first material are selectively etched with respect to the layers of the second material.

Abstract: Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate in a low pressure chamber using a dual frequency radio frequency component. Low pressure plasma enhanced chemical vapor deposition may be used to increase the etch selectivity of the AHM, permitting the use of a thinner AHM for semiconductor processing operations.

Abstract: This application describes a system startup method and apparatus. The method may include establishing a mapping relationship between address space of a first storage device and address space of a second storage device. The method may also include receiving a read/write request sent to the first storage device. Furthermore, the method may include when the read/write request is a write request for the first storage device, writing data to a second address in the second storage device based on a first address in the first storage device in the write request and the mapping relationship. Or, when the read/write request is a read request for the first storage device, determining whether data has been written to a fourth address corresponding to a third address in the read request. The method may further include reading data from the fourth address when the data has been written to the fourth address, or reading data from the third address when no data has been written to the fourth address.

Abstract: A method for depositing a carbon ashable hard mask layer on a substrate includes a) arranging a substrate in a processing chamber; b) setting chamber pressure in a predetermined pressure range; c) setting a substrate temperature in a predetermined temperature range from ?20° C. to 200° C.; d) supplying a gas mixture including hydrocarbon precursor and one or more other gases; and e) striking plasma by supplying RF plasma power for a first predetermined period to deposit a carbon ashable hard mask layer on the substrate.

Abstract: This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

Abstract: This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

Abstract: This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

Abstract: A method for selectively etching layers of a first material with respect to layers of a second material in a stack is provided. The layers of the first material are partially etched with respect to the layers of the second material. A deposition layer is selectively deposited on the stack, wherein portions of the deposition layer covering the layers of the second material are thicker than portions covering the layers of the first material, the selective depositing comprising providing a first reactant, purging some of the first reactant, wherein some undeposited first reactant is not purged, and providing a second reactant, wherein the undeposited first reactant combines with the second reactant and selectively deposits on the layers of the second material with respect to the layers of the first material. The layers of the first material are selectively etched with respect to the layers of the second material.

Abstract: A method for performing a search in a browser is provided. The method includes receiving one or more keywords entered in a current search engine and searching data from the current search engine based on the entered keywords. The method also includes displaying a search engine results page from the current search engine to a user and displaying alternative search engines when detecting that an operation event of the user in the search engine results page meets preset switching criteria. Further, the method includes extracting a search web address template corresponding to an alternative search engine selected by the user and loading the entered keywords into the search web address template corresponding to the selected alternative search engine to search data from the alternative search engine. In addition, the method includes displaying a search engine results page from the selected alternative search engine.

Abstract: A method for selectively etching silicon germanium with respect to silicon in a stack on a chuck in an etch chamber is provided. The chuck is maintained at a temperature below 15° C. The stack is exposed to an etch gas comprising a fluorine containing gas to selectively etch silicon germanium with respect to silicon.

Abstract: Embodiments of this application relate to the field of storage technologies, and disclose a data backup method and a terminal, to back up user data in a terminal when the terminal cannot be used. A specific solution is as follows: A terminal includes a first data partition, and the first data partition supports to start an operating system when the terminal is powered on. The terminal starts the operating system by using a second data partition after detecting a power-on failure of the terminal or detecting a preset operation of a user. The second data partition is a blank data partition. After the operating system is successfully started, the terminal transmits user data in the first data partition to a first storage medium. The first storage medium is located outside the terminal and is connected to the terminal.

Abstract: A method of manufacturing hybrid cable applicable in oil wells provides an FIMT, a conductor layer formed by continuous laser welding and cylindrically covered the outer surface of the FIMT, the outer cylindrical surface of the conductor layer being covered with a high temperature resistant insulating layer by a continuous extrusion method or by wrapped helically with insulating tapes around the outer surface of the conductor layer and the external steel tube cylindrically covered the outer surface of the insulating layer. The conductor layer is coaxial with the FIMT, the inner space of the hybrid cable to accommodating excess length of the optical fiber to allow for thermal expansions and tensile stress on the optical cable. The thickness of the insulating layer cylindrically covering the outer surface of the conductor layer is able to be increased, improving the insulating property.

Abstract: This application describes a system startup method and apparatus. The method may include establishing a mapping relationship between address space of a first storage device and address space of a second storage device. The method may also include receiving a read/write request sent to the first storage device. Furthermore, the method may include when the read/write request is a write request for the first storage device, writing data to a second address in the second storage device based on a first address in the first storage device in the write request and the mapping relationship. Or, when the read/write request is a read request for the first storage device, determining whether data has been written to a fourth address corresponding to a third address in the read request. The method may further include reading data from the fourth address when the data has been written to the fourth address, or reading data from the third address when no data has been written to the fourth address.

Abstract: An air conditioner is provided, which is capable of accurately determining appropriateness of a refrigerant amount in a refrigerating cycle. A control apparatus is configured to: stop a cooling operation; set an expansion valve to a fully-closed state and, at the same time, switch the selector valve to change the direction, in which a refrigerant flows, to an opposite direction; operate a compressor to perform a refrigerant recovery operation, in which a refrigerant contained in an outdoor heat exchanger is recovered by an indoor heat exchanger; and determine the appropriateness of a refrigerant amount in a refrigerating cycle, based on at least one of a time required for recovering the refrigerant, a pressure change in a refrigerant suctioned by the compressor, and temperature of the refrigerant discharged from the compressor during the refrigerant recovery operation.

Abstract: A method of manufacturing hybrid cable applicable in oil wells provides an FIMT, a conductor layer formed by continuous laser welding and cylindrically covered the outer surface of the FIMT, the outer cylindrical surface of the conductor layer being covered with a high temperature resistant insulating layer by a continuous extrusion method or by wrapped helically with insulating tapes around the outer surface of the conductor layer and the external steel tube cylindrically covered the outer surface of the insulating layer. The conductor layer is coaxial with the FIMT, the inner space of the hybrid cable to accommodating excess length of the optical fiber to allow for thermal expansions and tensile stress on the optical cable. The thickness of the insulating layer cylindrically covering the outer surface of the conductor layer is able to be increased, improving the insulating property.