Abstract: Process condition management facilitates the combination of dry development and post-development treatment into a single process chamber, eliminating the necessity for a post-dry development bake step in a separate chamber during semiconductor manufacturing. Thermal dry development and plasma dry development may be performed in the same chamber. Thermal dry development, plasma dry development and passivation such as an O2 flash treatment; or thermal dry development, plasma dry development, passivation and hardening operations are enabled without wafer transfer.

Abstract: Embodiments of this application relate to the field of storage technologies, and disclose a data backup method and a terminal, to back up user data in a terminal when the terminal cannot be used. A specific solution is as follows: A terminal includes a first data partition, and the first data partition supports to start an operating system when the terminal is powered on. The terminal starts the operating system by using a second data partition after detecting a power-on failure of the terminal or detecting a preset operation of a user. The second data partition is a blank data partition. After the operating system is successfully started, the terminal transmits user data in the first data partition to a first storage medium. The first storage medium is located outside the terminal and is connected to the terminal.

Abstract: A preparation method for a self-thixotropic polyurethane curing agent includes the following steps: mixing an isocyanate and a crystalline polyester diol and/or polyether diol, reacting at a temperature between 70° C.-110° C., after a reaction, cooling to room temperature and standing still for more than 12 h to obtain the self-thixotropic polyurethane curing agent.

Abstract: Systems and methods for collecting and displaying business insights in a cloud-based system. Steps include obtaining data from a cloud-based system associated with any of applications, infrastructure, and employees of an organization, wherein the cloud-based system includes a plurality of organizations with the applications, infrastructure, and employees each assigned thereto; processing the data associated with the organization to determine a plurality of insights; and displaying the plurality of insights on a per-organization basis based on the processing.

Abstract: A method for depositing a carbon ashable hard mask layer on a substrate includes a) arranging the substrate in a processing chamber; b) setting chamber pressure in a predetermined pressure range; c) setting a substrate temperature in a predetermined temperature range; d) supplying a gas mixture including hydrocarbon precursor and one or more other gases; e) striking plasma by supplying RF plasma power and RF bias power for a first predetermined period at a first power level and a second power level, respectively, to deposit the carbon ashable hard mask layer on the substrate; f) after the first predetermined period, stopping flow of the hydrocarbon precursor; and g) performing a substrate treatment on the substrate to reduce stress by: g1) supplying an inert gas mixture; and g2) changing power level of at least one of the RF plasma power and the RF bias power one or more times during the substrate treatment.

Abstract: A preparation method for a self-thixotropic polyurethane curing agent includes the following steps: mixing an isocyanate and a crystalline polyester diol and/or polyether diol, reacting at a temperature between 70° C.-110° C., after a reaction, cooling to room temperature and standing still for more than 12 h to obtain the self-thixotropic polyurethane curing agent.

Abstract: This disclosure relates to crystalline forms of 3-{4-[(2R)-2-aminopropoxy]phenyl}-N-[(1R)-1-(3-fluorophenyl) ethyl]imidazo[1,2-b]pyridazin-6-amine and its salts, as well as methods of preparing and using such crystalline forms.

Abstract: A method for depositing a carbon ashable hard mask layer on a substrate includes a) arranging a substrate in a processing chamber; b) setting chamber pressure in a predetermined pressure range; c) setting a substrate temperature in a predetermined temperature range from ?20° C. to 200° C.; d) supplying a gas mixture including hydrocarbon precursor and one or more other gases; and e) striking plasma by supplying RF plasma power for a first predetermined period to deposit a carbon ashable hard mask layer on the substrate.

Abstract: This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

Abstract: This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

Abstract: The present application relates to a field of anti-corrosion coating, in particular, relates to an aspartic polyurea coating including a polyaspartic acid ester: 36%-60%; a ketoimine: 4%-8%; a dispersant: 0.5%-1.0%; an organotin catalyst: 0.1%-0.2%; a titanium white powder: 0%-48%; a thixotropic agent: 0.2%-1.0%; a leveling agent: 0.05%-0.3%; an antifoamer: 0.1%-1.0%; an antiager: 0%-3.0%; a coupling agent: 0%-5%; a diluent: 0%-10% and component B isocyanate curing agent.

Abstract: Techniques described herein relate to methods, apparatus, and systems for promoting adhesion between a substrate and a metal-containing photoresist. For instance, the method may include receiving the substrate in a reaction chamber, the substrate having a first material exposed on its surface, the first material including a silicon-based material and/or a carbon-based material; generating a plasma from a plasma generation gas source that is substantially free of silicon, where the plasma includes chemical functional groups; exposing the substrate to the plasma to modify the surface of the substrate by forming bonds between the first material and chemical functional groups from the plasma; and depositing the metal-containing photoresist on the modified surface of the substrate, where the bonds between the first material and the chemical functional groups promote adhesion between the substrate and the metal-containing photoresist.

Abstract: A method for selectively etching layers of a first material with respect to layers of a second material in a stack is provided. The layers of the first material are partially etched with respect to the layers of the second material. A deposition layer is selectively deposited on the stack, wherein portions of the deposition layer covering the layers of the second material are thicker than portions covering the layers of the first material, the selective depositing comprising providing a first reactant, purging some of the first reactant, wherein some undeposited first reactant is not purged, and providing a second reactant, wherein the undeposited first reactant combines with the second reactant and selectively deposits on the layers of the second material with respect to the layers of the first material. The layers of the first material are selectively etched with respect to the layers of the second material.

Abstract: Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate in a low pressure chamber using a dual frequency radio frequency component. Low pressure plasma enhanced chemical vapor deposition may be used to increase the etch selectivity of the AHM, permitting the use of a thinner AHM for semiconductor processing operations.

Abstract: This application describes a system startup method and apparatus. The method may include establishing a mapping relationship between address space of a first storage device and address space of a second storage device. The method may also include receiving a read/write request sent to the first storage device. Furthermore, the method may include when the read/write request is a write request for the first storage device, writing data to a second address in the second storage device based on a first address in the first storage device in the write request and the mapping relationship. Or, when the read/write request is a read request for the first storage device, determining whether data has been written to a fourth address corresponding to a third address in the read request. The method may further include reading data from the fourth address when the data has been written to the fourth address, or reading data from the third address when no data has been written to the fourth address.

Abstract: A method for depositing a carbon ashable hard mask layer on a substrate includes a) arranging a substrate in a processing chamber; b) setting chamber pressure in a predetermined pressure range; c) setting a substrate temperature in a predetermined temperature range from ?20° C. to 200° C.; d) supplying a gas mixture including hydrocarbon precursor and one or more other gases; and e) striking plasma by supplying RF plasma power for a first predetermined period to deposit a carbon ashable hard mask layer on the substrate.

Abstract: This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

Abstract: This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

Abstract: This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

Abstract: A method for selectively etching layers of a first material with respect to layers of a second material in a stack is provided. The layers of the first material are partially etched with respect to the layers of the second material. A deposition layer is selectively deposited on the stack, wherein portions of the deposition layer covering the layers of the second material are thicker than portions covering the layers of the first material, the selective depositing comprising providing a first reactant, purging some of the first reactant, wherein some undeposited first reactant is not purged, and providing a second reactant, wherein the undeposited first reactant combines with the second reactant and selectively deposits on the layers of the second material with respect to the layers of the first material. The layers of the first material are selectively etched with respect to the layers of the second material.