Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may disconnect from a first radio access technology (RAT) service, independent of signaling from the first RAT service, after sensing that the UE has entered a coverage hole. The UE may use a connection to a second RAT service while in the coverage hole in association with disconnecting from the first RAT service. The UE may disconnect from the second RAT service, independent of signaling from the second RAT service, after sensing that the UE has exited the coverage hole and before expiration of a radio link failure (RLF) timer for the second RAT service. The UE may reconnect to the first RAT service before expiration of an RLF timer for the first RAT service. Numerous other aspects are described.

Abstract: The invention discloses a 4-(N-methyl) aminopiperidine myricetin derivatives containing sulfonamide, a preparation method and application, whose structural general formula is shown as follows: Wherein, R is substituted phenyl and substituted aromatic heterocyclic group; n is the number of carbon in the carbon chain and is 2, 3, 4 and 5 respectively. The substituted phenyl group is an alkyl group containing C1-6, an alkoxy group containing C1-6, a nitro group, a halogen atom or a hydrogen atom in ortho, meta and para positions on the benzene ring. The substituted aromatic heterocyclic group is thienyl, furyl, pyrrolyl, pyridyl, etc., and the substituent on the aromatic heterocyclic ring is an alkyl group containing C1-6, alkoxy group of C1-6, nitro group, halogen atom or hydrogen atom in ortho, meta and para positions. The invention has a better control effect on inhibiting plant germs and can be used as an agricultural bactericide.

Abstract: The present invention relates to a transparent projection screen having a Fresnel structure. The projection screen is provided with Fresnel structure units having a specific structure, such that incident light irradiated to each Fresnel structure unit can be corrected by a Fresnel microstructure at this position and is reflected in the direction of an observer within a certain visible range, thereby improving the display uniformity of the transparent projection screen, and also reducing the interference of external ambient light on the transparent projection screen, such that a projection system using the transparent projection screen has a good viewing effect.

Abstract: A method for depositing a carbon ashable hard mask layer on a substrate includes a) arranging a substrate in a processing chamber; b) setting chamber pressure in a predetermined pressure range; c) setting a substrate temperature in a predetermined temperature range from ?20° C. to 200° C.; d) supplying a gas mixture including hydrocarbon precursor and one or more other gases; and e) striking plasma by supplying RF plasma power for a first predetermined period to deposit a carbon ashable hard mask layer on the substrate.

Abstract: A dataset is determined to include skewed data and based on determining that the dataset includes skewed data, one or more sparse indexes for the skewed data of the dataset are built. A sparse index of the one or more sparse indexes is for a range of data of the skewed data, and the building the sparse index includes indicating one pointer for a selected record of the range of data and indicating another pointer for another selected record of the range of data. The sparse index is provided to be used in a query of the dataset.

Abstract: This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

Abstract: The invention discloses a 4-(N-methyl) aminopiperidine myricetin derivative containing dithiocarbamate, and its preparation method and application, whose structural general formula is shown as follows: wherein R is substituted phenyl and substituted aromatic heterocyclic group; n is the number of carbons in the carbon chain, which are 2, 3, 4 and 5 respectively; the substitute phenyl group is an alkyl group containing C1-6, alkoxy group containing C1-6, nitro group, halogen atom or hydrogen atom in ortho-, meta- and para-position on that benzene ring; the aromatic heterocyclic group is thienyl, furyl, pyrrolyl and pyridyl groups; the substituents on the substituted aromatic heterocycle are o-, m-, and p-containing C1-6 alkyl, C1-6 alkoxy, nitro, halogen, and hydrogen atoms. The invention has better inhibitory activity on cancer cells.

Abstract: This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

Abstract: The present application relates to a field of anti-corrosion coating, in particular, relates to an aspartic polyurea coating including a polyaspartic acid ester: 36%-60%; a ketoimine: 4%-8%; a dispersant: 0.5%-1.0%; an organotin catalyst: 0.1%-0.2%; a titanium white powder: 0%-48%; a thixotropic agent: 0.2%-1.0%; a leveling agent: 0.05%-0.3%; an antifoamer: 0.1%-1.0%; an antiager: 0%-3.0%; a coupling agent: 0%-5%; a diluent: 0%-10% and component B isocyanate curing agent.

Abstract: Techniques described herein relate to methods, apparatus, and systems for promoting adhesion between a substrate and a metal-containing photoresist. For instance, the method may include receiving the substrate in a reaction chamber, the substrate having a first material exposed on its surface, the first material including a silicon-based material and/or a carbon-based material; generating a plasma from a plasma generation gas source that is substantially free of silicon, where the plasma includes chemical functional groups; exposing the substrate to the plasma to modify the surface of the substrate by forming bonds between the first material and chemical functional groups from the plasma; and depositing the metal-containing photoresist on the modified surface of the substrate, where the bonds between the first material and the chemical functional groups promote adhesion between the substrate and the metal-containing photoresist.

Abstract: A method for selectively etching layers of a first material with respect to layers of a second material in a stack is provided. The layers of the first material are partially etched with respect to the layers of the second material. A deposition layer is selectively deposited on the stack, wherein portions of the deposition layer covering the layers of the second material are thicker than portions covering the layers of the first material, the selective depositing comprising providing a first reactant, purging some of the first reactant, wherein some undeposited first reactant is not purged, and providing a second reactant, wherein the undeposited first reactant combines with the second reactant and selectively deposits on the layers of the second material with respect to the layers of the first material. The layers of the first material are selectively etched with respect to the layers of the second material.

Abstract: Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate in a low pressure chamber using a dual frequency radio frequency component. Low pressure plasma enhanced chemical vapor deposition may be used to increase the etch selectivity of the AHM, permitting the use of a thinner AHM for semiconductor processing operations.

Abstract: This application describes a system startup method and apparatus. The method may include establishing a mapping relationship between address space of a first storage device and address space of a second storage device. The method may also include receiving a read/write request sent to the first storage device. Furthermore, the method may include when the read/write request is a write request for the first storage device, writing data to a second address in the second storage device based on a first address in the first storage device in the write request and the mapping relationship. Or, when the read/write request is a read request for the first storage device, determining whether data has been written to a fourth address corresponding to a third address in the read request. The method may further include reading data from the fourth address when the data has been written to the fourth address, or reading data from the third address when no data has been written to the fourth address.

Abstract: A method for depositing a carbon ashable hard mask layer on a substrate includes a) arranging a substrate in a processing chamber; b) setting chamber pressure in a predetermined pressure range; c) setting a substrate temperature in a predetermined temperature range from ?20° C. to 200° C.; d) supplying a gas mixture including hydrocarbon precursor and one or more other gases; and e) striking plasma by supplying RF plasma power for a first predetermined period to deposit a carbon ashable hard mask layer on the substrate.

Abstract: This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

Abstract: This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

Abstract: This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

Abstract: A method for selectively etching layers of a first material with respect to layers of a second material in a stack is provided. The layers of the first material are partially etched with respect to the layers of the second material. A deposition layer is selectively deposited on the stack, wherein portions of the deposition layer covering the layers of the second material are thicker than portions covering the layers of the first material, the selective depositing comprising providing a first reactant, purging some of the first reactant, wherein some undeposited first reactant is not purged, and providing a second reactant, wherein the undeposited first reactant combines with the second reactant and selectively deposits on the layers of the second material with respect to the layers of the first material. The layers of the first material are selectively etched with respect to the layers of the second material.

Abstract: A method for performing a search in a browser is provided. The method includes receiving one or more keywords entered in a current search engine and searching data from the current search engine based on the entered keywords. The method also includes displaying a search engine results page from the current search engine to a user and displaying alternative search engines when detecting that an operation event of the user in the search engine results page meets preset switching criteria. Further, the method includes extracting a search web address template corresponding to an alternative search engine selected by the user and loading the entered keywords into the search web address template corresponding to the selected alternative search engine to search data from the alternative search engine. In addition, the method includes displaying a search engine results page from the selected alternative search engine.

Abstract: A method for selectively etching silicon germanium with respect to silicon in a stack on a chuck in an etch chamber is provided. The chuck is maintained at a temperature below 15° C. The stack is exposed to an etch gas comprising a fluorine containing gas to selectively etch silicon germanium with respect to silicon.