Abstract: An estimation system generates, from a value of a time series of an estimation object in a past period, a plurality of patterns of a transition of a value of the estimation object. Based on the plurality of generated patterns and a value of a time series of a factor in the past period, the estimation system specifies a dependency relationship between a transition pattern and a value of the factor and a transition pattern at a past (or future) time point and identifies a model in accordance with the specified dependency relationship. By inputting a value of a time series of the factor in a future period to the estimation model, the estimation system specifies a time series of a value in the future period of the estimation object using at least one transition pattern.

Abstract: A vibration motor includes a stationary portion and a movable portion to vibrate in a central axis direction with respect to the stationary portion. The stationary portion includes a housing and a coil on an outer side in a radial direction of the movable portion. The movable portion includes a core portion including a magnet. The housing houses the movable portion and the coil, and includes a peripheral wall portion on an outer side in the radial direction of the coil and extending in an axial direction, and a magnetic portion on a portion of the peripheral wall portion and including a magnetic body. At least a portion of the magnetic portion opposes the coil in the radial direction and extends in a circumferential direction. The peripheral wall portion includes a through hole adjacent to the magnetic portion in the axial direction and extends in the circumferential direction.

Abstract: An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.

Abstract: An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.

Abstract: A seating state detection device includes an acquisition unit configured to acquire a detection signal group in a predetermined period that is output as a result of transmission and reception of waves by a radio wave sensor mounted on a vehicle, a signal extraction unit configured to extract specific-intensity signals in a predetermined reflection intensity range from the detection signal group, and a determination unit configured to determine whether an occupant in the vehicle is in a first riding state in which the occupant is directly seated on a seat or in a second riding state in which the occupant is seated in an infant auxiliary device, based on a distribution mode of the specific-intensity signals.

Abstract: A semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode, and a gate electrode over the gate insulating layer. The source electrode and the drain electrode include an oxide region formed by oxidizing a side surface thereof. Note that the oxide region of the source electrode and the drain electrode is preferably formed by plasma treatment with a high frequency power of 300 MHz to 300 GHz and a mixed gas of oxygen and argon.

Abstract: A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode.

Abstract: A fibrous body processing apparatus includes a humidifying unit, a first processing unit, a second processing unit, a first supply passage, a second supply passage, and a returning passage. The humidifying unit generates humidified air. The first processing unit processes a material that contains fibers. The second processing unit processes the material that was processed at the first processing unit. Humidified air is supplied from the humidifying unit to the first processing unit through the first supply passage. Humidified air is supplied from the first processing unit to the second processing unit, together with the material, through the second supply passage. The returning passage includes an upstream-side end portion and a downstream-side end portion. Humidified air is returned from the second supply passage or the second processing unit to the humidifying unit through the returning passage.

Abstract: A fibrous body processing apparatus includes a coarsely-crushed-pieces reservoir unit; a humidifying unit that generates humidified air and supplies the humidified air to the coarsely-crushed-pieces reservoir unit; a weight measurement unit that measures a weight of the coarsely crushed pieces let out of the coarsely-crushed-pieces reservoir unit; a fixed amount supplying unit that supplies a fixed amount of the coarsely crushed pieces measured by the weight measurement unit; a defibrating unit that defibrates the coarsely crushed pieces supplied from the fixed amount supplying unit; a first transportation portion through which the coarsely crushed pieces are sent from the coarsely-crushed-pieces reservoir unit to the weight measurement unit; a second transportation portion through which the coarsely crushed pieces are sent from the fixed amount supplying unit to the defibrating unit; and a generated at the humidifying unit is supplied to the defibrating unit while bypassing the weight measurement unit.

Abstract: To individually control supply of the power supply voltage to circuits, a semiconductor device includes a CPU, a memory that reads and writes data used in arithmetic operation of the CPU, a signal processing circuit that generates an output signal by converting a data signal generated by the arithmetic operation of the CPU, a first power supply control switch that controls supply of the power supply voltage to the CPU, a second power supply control switch that controls supply of the power supply voltage to the memory, a third power supply control switch that controls supply of the power supply voltage to the signal processing circuit, and a controller that at least has a function of controlling the first to third power supply control switches individually in accordance with an input signal and instruction signals input from the CPU and the signal processing circuit.

Abstract: An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.

Abstract: A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

Abstract: An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.

Abstract: A system generates a first tree structure representing a relation of a plurality of measurement data sets, and generates goodness-of-fit data based on at least a part of attribute data regarding one or more branch portions included in the first tree structure. The attribute data includes one or more attribute values at one or more points in time regarding each of one or more attribute items. The goodness-of-fit data includes goodness-of-fit for each attribute item regarding each branch portion. With regard to each attribute item for each branch portion, goodness-of-fit is a value calculated based on a parent node and two or more child nodes belonging to the relevant branch portion, and one or more attribute values corresponding to the relevant attribute item, and represents a degree that the relevant attribute item will fit as a base of a branch condition.

Abstract: A system performs factor selection processing, which includes performing a factor selection operation for selecting one or two or more factors from one or a plurality of factors; factor filtering processing which includes: determining, about each of the one or the plurality of factors before the factor selection processing is performed, whether a factor value for prediction input to a prediction model is within a range of a plurality of factor values for specimen used to identify the prediction model; and excluding a factor, a result of the determination of which is false, and outputting a factor not excluded; and prediction processing which includes calculating the prediction value of the prediction target by inputting, to the prediction model, a factor value for prediction about each of one or more factors including the factor selected in the factor selection processing and not including the factor excluded in the factor filtering processing.

Abstract: A three-dimensional object formation instruction apparatus receives information pertaining to distribution of a predetermined physical quantity in a three-dimensional space, and on the basis of the received information, determines a shape of a representation body representing the physical quantity, and then, on the basis of the received information, determines a position at which the representation body representing the physical quantity is to be arranged. The three-dimensional object formation instruction apparatus generates a three-dimensional object formation instruction including an instruction to form an object having the determined shape at the determined position, and outputs the generated instruction.

Abstract: A platoon traffic system includes a plurality of platoons including vehicles on and from which passengers board and exit, and an operation management apparatus setting an operation schedule including assignment of the vehicles to the plurality of platoons and management thereof. The vehicles in each of the platoons integrally operate in accordance with the operation schedule along a track including boarding and exiting points where passengers board and exit the vehicles The operation management apparatus accepts a boarding request for the vehicles, the request specifying the boarding and exiting points, and changes the operation schedule to reassign the vehicles belonging to the plurality of platoons, among the platoons based on the boarding request and numbers of passengers allowed to board the vehicles.

Abstract: A system operation support device in a power system stabilizes the power system and has a predicted accident time system state calculation unit that receives measured data, a system topology, and a target accident type as inputs, and calculates a system state and a predicted accident time system state. A control menu calculation unit receives the results of the predicted accident time system state as inputs and calculates a control menu. A restoration control means calculation unit receives the result of the control menu calculation as an input and calculates a restoration control procedure. A restoration prevention control procedure calculation unit receives the result of the restoration control and a target restoration time parameter as inputs and performs a power generator output adjustment time simulation, a necessary prevention control amount calculation, and a prevention control procedure calculation. A display unit displays the restoration control procedure and the prevention control procedure.

Abstract: Controlling total emission current of an electron emitting construct in an x-ray emitting device by providing a cathode, providing multiple active areas each active area having a gated cone electron source, including multiple emitter tips arranged in an array, a gate electrode, and a gate interconnect lead connected to the gate electrode, providing an x-ray emitting construct comprising an anode, the anode being an x-ray target, situating the x-ray emitting construct facing the active areas face each other, selecting a set of active areas, and activating selected active areas by conductively connecting a voltage source to their associated the gate electrode interconnect lead.

Abstract: An object of the invention is to provide a data processing system that can appropriately determine data to be used for identification of a prediction model. The data processing system that performs prediction using a prediction model, includes: a selection unit that selects data to be used for identification of a prediction model from a storage unit that stores data; and a processing unit that identifies the prediction model by using the data selected by the selection unit. The selection unit selects, from the storage unit, predetermined first data, and second data of a type and/or condition different from the first data, based on a branch condition of structure data of a structural prediction model.