Abstract: A charged particle beam writing apparatus which the apparatus includes a first area density calculation unit and a first dimension error calculation unit. The apparatus includes a first dimension calculation unit which calculates a second dimension of a pattern obtained by correcting the first dimension error of the first dimension, a second area density calculation unit which calculates a second area density occupied by the pattern of the second dimension in the predetermined region, a second dimension error calculation unit which calculates a second dimension error caused by the loading effect, a second dimension calculation unit which calculates a third dimension by adding the second dimension error to the second dimension, a judgment unit which judges whether a difference between the first dimension and the third dimension is within a predetermined range, and a writing unit which writes the pattern of the second dimension onto a target workpiece.

Abstract: A method for resizing a pattern to be written by using lithography technique includes calculating a first dimension correction amount of a pattern for correcting a dimension error caused by a loading effect, for each small region made by virtually dividing a writing region of a target workpiece into meshes of a predetermined size, based on an area density of the each small region, calculating a second dimension correction amount in accordance with a line width dimension of the pattern to be written in the each small region, correcting the first dimension correction amount by using the second dimension correction amount, and resizing the line width dimension of the pattern by using a corrected first dimension correction amount, and outputting a result of the resizing.

Abstract: A beam dose computing method includes specifying a matrix of rows and columns of regions as divided from a surface area of a target object to include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects in the first regions, determining corrected size values for correcting pattern line width deviations occurring due to loading effects in the second regions, using said corrected size values in said second regions to create a map of base doses of the beam in respective ones of said second regions, using said corrected size values to prepare a map of proximity effect correction coefficients in respective ones of said second regions, using the maps to determine second corrected doses of said beam for correction of proximity effects in said third regions, and using the first and second corrected doses to determine an actual beam dose at each position on

Abstract: A charged particle beam drawing apparatus applies a predetermined dose of a charged particle beam for drawing patterns corresponding to figures included in a drawing data, in a whole of a drawing area of a workpiece, before a result of calculation of a fogging effect correction dose is obtained, wherein a proximity effect correction dose is incorporated in the predetermined dose, and the fogging effect correction dose is not incorporated in the predetermined dose, then, the charged particle beam drawing apparatus applies a predetermined dose of the charged particle beam for drawing the patterns which overlap the patterns drawn before the result of calculation of the fogging effect correction dose is obtained, in the whole of the drawing area of the workpiece, after the calculation of the fogging effect correction dose, wherein the proximity effect correction dose and the fogging effect correction dose are incorporated in the predetermined dose.

Abstract: In a charged particle beam drawing apparatus, if at least one of calculating portions is free and at least one memory includes a free portion, a report that a next process can be additionally started by using at least one free calculating portion and the free portion of the memory, is transferred from a daemon to a writing control unit, and the next process is additionally started by the daemon on the basis of a start request transferred from the writing control unit to the daemon. If there is a possibility of a shortage of the calculating portions and the memory, and if a start request for starting a next process is transferred from the writing control unit to the daemon, the start request for starting the next process is refused by the daemon.

Abstract: A method for resizing a pattern to be written by using lithography technique includes calculating a first dimension correction amount of a pattern for correcting a dimension error caused by a loading effect, for each small region made by virtually dividing a writing region of a target workpiece into meshes of a predetermined size, based on an area density of the each small region, calculating a second dimension correction amount in accordance with a line width dimension of the pattern to be written in the each small region, correcting the first dimension correction amount by using the second dimension correction amount, and resizing the line width dimension of the pattern by using a corrected first dimension correction amount, and outputting a result of the resizing.

Abstract: There is provided a charged particle beam writing apparatus in which data processing is optimized by automatically dividing process regions on which parallel distributed processing is performed.

Abstract: A charged particle beam drawing apparatus for drawing patterns corresponding to figures in a drawing data, has a portion for dividing a drawing area on the workpiece into block frames, a portion for combining at least a first block frame and a second block frame into a virtual block frame, and a portion for transferring a data of the virtual block frame from an input data dividing module to a common memory of a first converter and a second converter. The first converter converts a data of a first figure included in the first block frame into a first drawing apparatus internal format data. The second converter converts a data of a second figure included in the second block frame into a second drawing apparatus internal format data. The first figure and the second figure are included in a cell extending over the first block frame and the second block frame.

Abstract: A charged particle beam drawing apparatus includes a charged particle beam gun, a first forming aperture member having an opening, wherein a charged particle beam emitted from the charged particle beam gun is passed through the opening of the first forming aperture member, a second forming aperture member having an opening, wherein the charged particle beam passed through the first forming aperture member is passed through the opening of the second forming aperture member, a movable stage for supporting a workpiece, wherein patterns corresponding to figures in a drawing data are drawn on the workpiece by the charged particle beam passed through the second forming aperture member, and a drawing data correcting process portion for moving the figures in the drawing data on the basis of positions in the opening of the second forming aperture, where the charged particle beam for drawing the patterns is passed through.

Abstract: A writing method includes calculating a proximity effect-corrected dose for correcting a proximity effect in charged particle beam writing, for each first mesh region made by virtually dividing a writing region of a target object into a plurality of first mesh regions of a first mesh size, calculating a fogging effect-corrected dose by using the proximity effect-corrected dose calculated and an area density in the first mesh size with respect to a part of a calculation region for calculating the fogging effect-corrected dose for correcting a fogging effect in the charged particle beam writing, and by using an area density in a second mesh size larger than the first mesh size with respect to a remaining part of the calculation region, synthesizing the fogging effect-corrected dose and the proximity effect-corrected dose for the each first mesh region, and writing a pattern on the target object by using a charged particle beam based on a synthesized correction dose.

Abstract: A beam dose computing method includes specifying a matrix of rows and columns of regions as divided from a surface area of a target object to include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects in the first regions, determining corrected size values for correcting pattern line width deviations occurring due to loading effects in the second regions, using said corrected size values in said second regions to create a map of base doses of the beam in respective ones of said second regions, using said corrected size values to prepare a map of proximity effect correction coefficients in respective ones of said second regions, using the maps to determine second corrected doses of said beam for correction of proximity effects in said third regions, and using the first and second corrected doses to determine an actual beam dose at each position on

Abstract: The present invention provides a charged particle beam writing apparatus and a charged particle beam writing method capable of shortening the time necessary to generate shot data and improving writing throughput. A graphic pattern defined in write data is divided into graphics represented in shot units (S20). The divided graphics are temporarily stored in a memory. The graphics divided at S20 are distributed to their corresponding subfield areas while developing position information defined in a state of being compressed to write data (S30). When each pattern is written by multi-pass writing, graphics divided at a first pass are used for distribution to subfield areas after a second pass.

Abstract: A beam dose computing method includes specifying a matrix of rows and columns of regions as divided from a surface area of a target object to include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects in the first regions, determining corrected size values for correcting pattern line width deviations occurring due to loading effects in the second regions, using said corrected size values in said second regions to create a map of base doses of the beam in respective ones of said second regions, using said corrected size values to prepare a map of proximity effect correction coefficients in respective ones of said second regions, using the maps to determine second corrected doses of said beam for correction of proximity effects in said third regions, and using the first and second corrected doses to determine an actual beam dose at each position on

Abstract: A charged particle beam writing method includes irradiating a shot of a charged particle beam, and deflecting the charged particle beam of the shot using a plurality of deflectors arranged on an optical path of the charged particle beam to write a pattern on a target object, wherein any one of the plurality of deflectors controls deflection of a charged particle beam of a shot different from a shot which is controlled in deflection by another deflector in the same period.

Abstract: A charged particle beam writing apparatus includes a first area density calculation unit configured to calculate a first area density occupied by a pattern of a first dimension in a predetermined region, a first dimension error calculation unit configured to calculate a first dimension error caused by a loading effect, using the first area density, a first dimension calculation unit configured to calculate a second dimension of a pattern obtained by correcting the first dimension error of the first dimension, a second area density calculation unit configured to calculate a second area density occupied by the pattern of the second dimension in the predetermined region, a second dimension error calculation unit configured to calculate a second dimension error caused by the loading effect, using the second area density, a second dimension calculation unit configured to calculate a third dimension by adding the second dimension error to the second dimension, a judgment unit configured to judge whether a differenc

Abstract: A method for resizing a pattern to be written by using lithography technique includes calculating a first dimension correction amount of a pattern for correcting a dimension error caused by a loading effect, for each small region made by virtually dividing a writing region of a target workpiece into meshes of a predetermined size, based on an area density of the each small region, calculating a second dimension correction amount in accordance with a line width dimension of the pattern to be written in the each small region, correcting the first dimension correction amount by using the second dimension correction amount, and resizing the line width dimension of the pattern by using a corrected first dimension correction amount, and outputting a result of the resizing.

Abstract: A charged particle beam writing method includes irradiating a shot of a charged particle beam, and deflecting the charged particle beam of the shot using a plurality of deflectors arranged on an optical path of the charged particle beam to write a pattern on a target object, wherein any one of the plurality of deflectors controls deflection of a charged particle beam of a shot different from a shot which is controlled in deflection by another deflector in the same period.

Abstract: A beam dose computing method includes specifying a matrix of rows and columns of regions as divided from a surface area of a target object to include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects in the first regions, determining corrected size values for correcting pattern line width deviations occurring due to loading effects in the second regions, using said corrected size values in said second regions to create a map of base doses of the beam in respective ones of said second regions, using said corrected size values to prepare a map of proximity effect correction coefficients in respective ones of said second regions, using the maps to determine second corrected doses of said beam for correction of proximity effects in said third regions, and using the first and second corrected doses to determine an actual beam dose at each position on