Abstract: A semiconductor is disclosed that may include: a first drift region; a base region arranged on the first semiconductor layer; a source region arranged on the base region; a main electrode electrically connected to the source region; and a gate electrode structure that penetrates the source region and base region and reaches the first drift region, wherein the gate electrode structure comprises: a gate electrode; and an insulating material that insulates the gate electrode from the first drift region and the base region; and a field plate structure reaching the first drift region deeper than the gate electrode structure, wherein the field plate structure comprises: a field plate; a resistive part that electrically connects the main electrode to the field plate; and an insulating material that insulates the field plate and the resistive part section from the first drift region and the base region.

Abstract: A semiconductor device according to one or more embodiments may include a first semiconductor region, a second semiconductor region arranged on the first semiconductor region, a third semiconductor region arranged on the second semiconductor region, a first trench penetrating the second semiconductor region from the third semiconductor region and reaching the first semiconductor region, a first main electrode arranged on the second semiconductor region via a first insulating film, field electrodes arranged via second insulating films in a second trenches that are deeper than the first trench and reach the first semiconductor region. The first main electrode may be arranged between the field electrodes. The field electrodes may be arranged alternately, and the field electrodes that are alternately adjacent to each other may be arranged so that the field electrodes partially overlap with adjacent field electrodes in an alignment direction of the arranging field electrodes in a plan view.

Abstract: A semiconductor is disclosed that may include: a first drift region; a base region arranged on the first semiconductor layer; a source region arranged on the base region; a main electrode electrically connected to the source region; and a gate electrode structure that penetrates the source region and base region and reaches the first drift region, wherein the gate electrode structure comprises: a gate electrode; and an insulating material that insulates the gate electrode from the first drift region and the base region; and a field plate structure reaching the first drift region deeper than the gate electrode structure, wherein the field plate structure comprises: a field plate; a resistive part that electrically connects the main electrode to the field plate; and an insulating material that insulates the field plate and the resistive part section from the first drift region and the base region.