Patents by Inventor Jun Yeong Seok

Jun Yeong Seok has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9735203
    Abstract: Provided are 3D non-volatile memory devices and methods of fabricating the same. A 3D non-volatile memory device according to an embodiment of the present invention includes a plurality of conductive lines, which are separated from one another in parallel; a plurality of conductive planes, which extend across the plurality of conductive lines and are separated from one another in parallel; and non-volatile data storage layer patterns, which are respectively arranged at regions of intersection at which the plurality of conductive lines and the plurality of conductive planes cross each others.
    Type: Grant
    Filed: April 11, 2016
    Date of Patent: August 15, 2017
    Assignee: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
    Inventors: Cheol Seong Hwang, Jun Yeong Seok
  • Publication number: 20160225825
    Abstract: Provided are 3D non-volatile memory devices and methods of fabricating the same. A 3D non-volatile memory device according to an embodiment of the present invention includes a plurality of conductive lines, which are separated from one another in parallel; a plurality of conductive planes, which extend across the plurality of conductive lines and are separated from one another in parallel; and non-volatile data storage layer patterns, which are respectively arranged at regions of intersection at which the plurality of conductive lines and the plurality of conductive planes cross each others.
    Type: Application
    Filed: April 11, 2016
    Publication date: August 4, 2016
    Inventors: Cheol Seong HWANG, Jun Yeong SEOK
  • Patent number: 9331272
    Abstract: Provided are 3D non-volatile memory devices and methods of fabricating the same. A 3D non-volatile memory device according to an embodiment of the present invention includes a plurality of conductive lines, which are separated from one another in parallel; a plurality of conductive planes, which extend across the plurality of conductive lines and are separated from one another in parallel; and non-volatile data storage layer patterns, which are respectively arranged at regions of intersection at which the plurality of conductive lines and the plurality of conductive planes cross each others.
    Type: Grant
    Filed: June 11, 2012
    Date of Patent: May 3, 2016
    Assignee: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
    Inventors: Cheol Seong Hwang, Jun Yeong Seok
  • Publication number: 20140124729
    Abstract: Provided are 3D non-volatile memory devices and methods of fabricating the same. A 3D non-volatile memory device according to an embodiment of the present invention includes a plurality of conductive lines, which are separated from one another in parallel; a plurality of conductive planes, which extend across the plurality of conductive lines and are separated from one another in parallel; and non-volatile data storage layer patterns, which are respectively arranged at regions of intersection at which the plurality of conductive lines and the plurality of conductive planes cross each others.
    Type: Application
    Filed: June 11, 2012
    Publication date: May 8, 2014
    Applicant: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
    Inventors: Cheol Seong Hwang, Jun Yeong Seok