Abstract: A composition of general formula (1): Nax[MnaNibCrc]O2+y (1), wherein: 0.6?x?0.8; ?0.1?y?0.1; 0.55?a?0.7; 0.25?b?0.3; c?0.05; and a+b+c?1.0, an intermediate product for preparing a composition of general formula (1) and a process of synthesis, wherein the mixed sodium-transition metal oxide of general formula (1) may generally show an essentially or solely P2 structure, and may be used as a positive electrode material for a sodium ion secondary battery.

Abstract: The present invention provides a sheet-like material in which a plant-derived raw material of low environmental impact is used. The invention also provides a sheet-like material that ideally has a uniform and refined nap and a sheet-like material that is strong, has excellent shape stability, is lightweight and is very pliable. This sheet-like material is characterized in being made of nonwoven fabric that is made of polyester microfiber containing a 1,2-propanediol-derived component in an amount prescribed in the present application and a polyurethane elastomer resin containing structural monomers prescribed in the present application.

Abstract: An optical prism that includes an interlock structure that precisely couples to a complementary structure of a refractive lens. For precision, the interlock structure may be formed at the same time and using the same technique as the optical surface of the prism. The interlock structure provides high accuracy when assembling a folded lens system by precisely aligning the object side optical surface of the lens with the image side optical surface of the prism so that the optical axis is centered in the lens. The prism may have refractive power. A portion of the object side surface may be coated with an opaque material to provide an aperture stop at that surface.

Abstract: An array of memory cells might include a first data line, a second data line, a source, a capacitance selectively connected to the first data line, a string of series-connected non-volatile memory cells between the first data line and the capacitance, and a pass gate selectively connected between the second data line and the source, wherein an electrode of the capacitance is capacitively coupled to a channel of the pass gate.

Abstract: A cryocooler includes a second-stage cooling stage, a second cylinder which includes the second-stage cooling stage on a terminal of the second-stage cylinder, a second-stage displacer which includes a magnetic regenerator material and is accommodated in the second-stage cylinder so as to be able to reciprocate in the second-stage cylinder, and a tubular magnetic shield which is installed on the second-stage cooling stage and extends along the second-stage cylinder outside the second-stage cylinder. The magnetic shield is formed of a normal conductor and a product of an electrical conductivity in a temperature range of 10 K (Kelvin) or less and a thickness of the tubular magnetic shield is 60 MS (Mega-Siemens) to 1980 MS.

Abstract: A laser processing system includes an irradiation device that irradiates a laser beam to a workpiece and includes a housing, a box positioned inside the housing and housing at least a part of a path of the laser beam, and at least one infrared sensor positioned inside the housing and around the box.

Abstract: Provided is a culture device, including: a culture tank (110) configured to store an object liquid that is a culture solution having suspended therein an object; a screen (210) made of a metal, the screen including a main body (212) and a plurality of through holes (214) passing through the main body from a front surface (212a) thereof to a back surface (212b) thereof; a spray portion (220) configured to spray the object liquid stored in the culture tank onto the front surface of the body; an accommodation portion (240) surrounding the back surface of the main body and configured to accommodate the culture solution having passed through the through holes; a UV light irradiation portion (250) arranged in the accommodation portion and configured to radiate UV light; and a return portion (290) configured to return the culture solution in the accommodation portion to the culture tank.

Abstract: A driving apparatus is controlled by using a driving command that is obtained by applying an accelerator operation amount to a relation between the accelerator operation amount and the driving command for the driving apparatus, and the relation is set by using a distribution of usage of the driving command by a driver such that a gradient that is a change in the driving command with a change in the accelerator operation amount in a high usage range including a value having a longest usage time among values of the driving command is less than the gradient in a range other than the high usage range.

Abstract: Provided is laminated glass capable of preventing generation of a projection in the interlayer film in an end part of laminated glass, and keeping the appearance of laminated glass excellent. Laminated glass according to the present invention is laminate glass including a first lamination glass member, a second lamination glass member, and an interlayer film containing a thermoplastic resin, and when a light irradiation test: “conducting 4 cycles each cycle including the process of irradiating the laminated glass with xenon light at a black panel temperature of 83° C. and a humidity of 50% RH for 144 hours, and dipping the laminated glass in pure water at 80° C. for 24 hours” is conducted in the laminated glass, a ratio of a weight average molecular weight of the thermoplastic resin at a position of 2 mm inwardly from an end part of the laminated glass, to a weight average molecular weight of the thermoplastic resin at a position of 70 mm inwardly from an end part of the laminated glass is more than 0.5.

Abstract: A processing device includes a control unit configured to execute identifying a first training device that is of one or more training devices equipped in a movable object for providing a training opportunity to a passenger and that is used by the passenger, and at least one process of controlling a traveling state of the movable object depending on a content of a training using the first training device and restricting use states of the one or more training devices depending on the traveling state of the movable object.

Abstract: A semiconductor device includes a base plate, a substrate, a semiconductor element, a case, and a wiring terminal. The case is disposed on the base plate so as to cover the substrate and the semiconductor element. The wiring terminal is electrically connected to the semiconductor element. The case includes a first case unit and a second case unit that is separate from the first case unit. The wiring terminal includes a first wiring unit and a second wiring unit. The first wiring unit is disposed so as to protrude from an inside to an outside of the case, and is electrically connected to the semiconductor element. The second wiring unit is bent with respect to the first wiring unit and disposed outside the case. The first case unit and the second case unit are disposed so as to sandwich the first wiring unit.

Abstract: An image stabilization actuator is used to displace a movable unit in a first direction, and a position in the first direction when an AF-axis position detection signal reaches a peak value is detected. Similarly, the image stabilization actuator is used to displace the movable unit in a second direction, and a position in the second direction when the AF-axis position detection signal reaches a peak value is detected. A reference position based on the position in the first direction and the position in the second direction thus obtained is stored. Correction information indicating a relationship between a displacement amount, from the reference position, of the movable unit displaced by the image stabilization actuator and a correction amount of the position detection signal is stored.

Abstract: Memory might include a non-volatile memory cell, a capacitance selectively connected to the non-volatile memory cell, a field-effect transistor having a channel capacitively coupled to an electrode of the capacitance, and a controller for access of the non-volatile memory cell configured to cause the memory to increase a voltage level of the electrode of the capacitance, selectively discharge the voltage level of the electrode of the capacitance through the non-volatile memory cell responsive to a data state stored in the non-volatile memory cell, and determine whether the field-effect transistor is activated in response to a remaining voltage level of the electrode of the capacitance.

Abstract: A processing device that is provided in a building in which a user stays includes a control unit configured to perform: transmitting a request for a vehicle which the user desires to use to move to the building; detecting that the vehicle reaches a vicinity of the building; inquiring of the user about whether access of the vehicle to the inside of the building is permitted when it is detected that the vehicle reaches the vicinity of the building; and guiding at least a part of the vehicle to the inside of the building when the access is permitted by the user.

Abstract: Provided is an anode active material configured to achieve both an increase in the coulombic efficiency during initial charge and discharge of an all-solid-state battery, and suppression of an increase in the resistance of the all-solid-state battery. The anode active material may be an anode active material, wherein the anode active material is an anode active material for use in all-solid-state batteries; wherein the anode active material comprises a lithium-silicon alloy and elemental silicon; and wherein the anode active material has peaks at positions of 2?=20.2°±0.5°, 23.3°±0.5°, 40.5°±0.5°, and 46.0°±0.5° in a XRD spectrum obtained by XRD measurement using CuK? radiation.

Abstract: A main object of the present disclosure is to provide an all solid state battery with excellent capacity durability when restraining pressure is not applied or even when low restraining pressure is applied thereto. The present disclosure achieves the object by providing an all solid state battery comprising layers in the order of a cathode layer, a solid electrolyte layer, and an anode layer; wherein the anode layer contains an anode active material including a silicon clathrate II type crystal phase; restraining pressure of 0 MPa or more and less than 5 MPa is applied to the all solid state battery in a layering direction; and a specific surface area of the anode active material is 8 m2/g or more and 17 m2/g or less.

Abstract: A main object of the present disclosure is to provide an all solid state battery with excellent capacity durability when restraining pressure is not applied or even when low restraining pressure is applied thereto. The present disclosure achieves the object by providing an all solid state battery comprising layers in the order of a cathode layer, a solid electrolyte layer, and an anode layer; wherein the anode layer contains an anode active material including a silicon clathrate II type crystal phase; restraining pressure of 0 MPa or more and less than 5 MPa is applied to the all solid state battery in a layering direction; and when a capacity ratio of anode capacity with respect to cathode capacity is regarded as A, the capacity ratio A is 2.5 or more and 4.8 or less.

Abstract: A cryocooler includes a second-stage cooling stage, a second cylinder which includes the second-stage cooling stage on a terminal of the second-stage cylinder, a second-stage displacer which includes a magnetic regenerator material and is accommodated in the second-stage cylinder so as to be able to reciprocate in the second-stage cylinder, and a tubular magnetic shield which is installed on the second-stage cooling stage and extends along the second-stage cylinder outside the second-stage cylinder. The magnetic shield is formed of a normal conductor and a product of an electrical conductivity in a temperature range of 10 K (Kelvin) or less and a thickness of the tubular magnetic shield is 60 MS (Mega-Siemens) to 1980 MS.

Abstract: A main object of the present disclosure is to provide an active material wherein the volume variation of an electrode layer during charge/discharge may be suppressed. The present disclosure achieves the object by providing an active material used for an all solid state battery, the active material comprising at least Si, and in infrared spectrum, when a maximum peak intensity in 900 cm?1 or more and 950 cm?1 or less is regarded as I1, and a maximum peak intensity in 1000 cm?1 or more and 1100 cm?1 or less is regarded as I2, the I1 and the I2 satisfy 0.55?I2/I1?1.0, and 0.01?I1.

Abstract: A main object of the present disclosure is to provide a battery with excellent capacity. The present disclosure achieves the object by providing a battery comprising a cathode layer, an electrolyte layer, and an anode layer, in this order, and the anode layer includes a silicon clathrate compound, as an anode active material, the silicon clathrate compound has a composition represented by MxSi46, wherein M is a metal element, x satisfies 0<x<46, and includes a crystal phase of a Type I silicon clathrate, and an average primary particle size of the silicon clathrate compound is 50 nm or more and 3000 nm or less.