Abstract: A semiconductor structure comprises a carrier, a plurality of under bump metallurgy layers, a plurality of copper containing bumps and an organic barrier layer, wherein the carrier comprises a protective layer and a plurality of conductive pads, mentioned protective layer comprises a plurality of openings, the conductive pads exposed by the openings, mentioned under bump metallurgy layers being formed on the conductive pads, mentioned copper containing bumps being formed on the under bump metallurgy layers, each of the copper containing bumps comprises a top surface and a ring surface in connection with the top surface, mentioned organic barrier layer having a first coverage portion, and mentioned first coverage portion covers the top surface and the ring surface of each of the copper containing bumps.

Abstract: A semiconductor structure comprises a carrier, a plurality of under bump metallurgy layers, a plurality of copper containing bumps and an organic barrier layer, wherein the carrier comprises a protective layer and a plurality of conductive pads, mentioned protective layer comprises a plurality of openings, the conductive pads exposed by the openings, mentioned under bump metallurgy layers being formed on the conductive pads, mentioned copper containing bumps being formed on the under bump metallurgy layers, each of the copper containing bumps comprises a top surface and a ring surface in connection with the top surface, mentioned organic barrier layer having a first coverage portion, and mentioned first coverage portion covers the top surface and the ring surface of each of the copper containing bumps.

Abstract: The present invention relates to methods for fabricating a cathode emitter and a zinc oxide anode for a field emission device to improve the adhesion between emitters and a substrate and enhance the luminous efficiency of a zinc oxide thin film so that the disclosed methods can be applied in displays and lamps. In comparison to a conventional method for fabricating a field emission device, the method according to the present invention can reduce the cost and time for manufacture and is suitable for fabricating big-sized products. In addition, the present invention further discloses a field emission device comprising a zinc oxide/nano carbon material cathode, a zinc oxide anode and a spacer.