Abstract: A method for manufacturing an electronic device including a semiconductor memory may include forming a first carbon electrode material, surface-treating the first carbon electrode material to decrease a surface roughness of the first carbon electrode material, and forming a second carbon electrode material on the treated surface of the first carbon electrode material. The second carbon electrode material may have a thickness that is greater than a thickness of the first carbon electrode material.

Abstract: This application provides a method for issuing a digital certificate performed by a digital certificate issuing center that includes a public-private key generation module and an authentication module. The method includes: receiving a public-private key request from a node in a blockchain network; generating a public key and a private key of the node by using the public-private key generation module, and transmitting the public and private keys to the node; receiving the public key of the node and registration information of the node, and authenticating the registration information by using the authentication module; and generating, in accordance with a determination that the authentication succeeds, a digital certificate of the node by using the authentication module, and transmitting the digital certificate to the node. The embodiments of this application can improve the probative value of an issued digital certificate, thereby improving the security of data exchange in a blockchain network.

Abstract: A service processing method, apparatus, and storage medium of a blockchain system are provided. The service processing method includes obtaining authentication information of a service participant; determining whether data in the authentication information of the service participant is updated; generating, based on the data in the authentication information of the service participant being updated, a notification message according to the updated data; and transmitting the notification message to a service processing node subnetwork, the notification message instructing one or more service processing nodes in the service processing node subnetwork to process a service request according to updated authentication information of the service participant.

Abstract: A chalcogenide material may include germanium (Ge), arsenic (As), selenium (Se) and from 0.5 to 10 at % of at least one group 13 element. A variable resistance memory device may include a first electrode, a second electrode, and a chalcogenide film interposed between the first electrode and the second electrode and including from 0.5 to 10 at % of at least one group 13 element. In addition, an electronic device may include a semiconductor memory. The semiconductor memory may include a column line, a row line intersecting the column line, and a memory cell positioned between the column line and the row line, wherein the memory cell comprises a chalcogenide film including germanium (Ge), arsenic (As), selenium (Se), and from 0.5 to 10 at % of at least one group 13 element.

Abstract: Embodiments of this application disclose methods, systems, and devices for electronic note identifier allocation and electronic note generation. In one aspect, an electronic note identifier allocation method is performed by a processing node of a distributed computer system. The processing node receives an electronic note identifier application request initiated by a service node. The processing node generates an electronic note identifier set in response to the electronic note identifier application request. The processing node also synchronizes the electronic note identifier in the electronic note identifier set. After the synchronizing, the processing node further the electronic note identifier in the electronic note identifier set to the service node.

Abstract: A method for manufacturing an electronic device including a semiconductor memory may include forming a first carbon electrode material, surface-treating the first carbon electrode material to decrease a surface roughness of the first carbon electrode material, and forming a second carbon electrode material on the treated surface of the first carbon electrode material. The second carbon electrode material may have a thickness that is greater than a thickness of the first carbon electrode material.

Abstract: An electronic device includes a semiconductor memory. The semiconductor memory includes word lines, bit lines intersecting the word lines, and memory cells coupled to and disposed between the word lines and the bit lines, each of the memory cells including a variable resistance layer in an amorphous state regardless of a value of data stored in the memory cells. In a reset operation, a memory cell is programmed to a high-resistance amorphous state by applying, to the memory cell, a sub-threshold voltage that is lower than a lowest threshold voltage among threshold voltages of the memory cells.

Abstract: A method for manufacturing an electronic device including a semiconductor memory may include forming a first carbon electrode material, surface-treating the first carbon electrode material to decrease a surface roughness of the first carbon electrode material, and forming a second carbon electrode material on the treated surface of the first carbon electrode material. The second carbon electrode material may have a thickness that is greater than a thickness of the first carbon electrode material.

Abstract: A cross-blockchain data processing method is provided. The method includes: obtaining an asset transfer instruction triggered for a first asset on the first blockchain, and configuring an asset state of the first asset to a locked state on the first blockchain; determining the first asset in the locked state as an asset, and determining a cross-chain asset transfer request corresponding to the asset; obtaining an asset transfer interface associated with a second blockchain, and calling the asset transfer interface to transmit the cross-chain asset transfer request to a second server node on the second blockchain; and receiving signing response information transmitted by the second server node in response to determining that the verification succeeds, freezing the asset on the first blockchain according to the signing response information, and notifying the second server node to release a second asset associated with the asset on the second blockchain.

Abstract: An electronic device includes a semiconductor memory. The semiconductor memory includes a word line, a bit line, and a memory cell coupled to and disposed between the word line and the bit line, the memory cell including a variable resistance layer that remains in an amorphous state regardless of a value of data stored in the memory cell. In a reset operation, the memory cell is programmed to a high-resistance amorphous state by applying, to the memory cell, a sub-threshold voltage that is greater than 0.7 time of a threshold voltage of the memory cell and is smaller than 0.95 time of the threshold voltage.

Abstract: A data sharing method, server and storage medium including receiving a first part of a first key from a first client, the first key corresponding to encrypted data uploaded to a block of an information sharing system generating a first authorization code corresponding to the encrypted data; transmitting the first authorization code to the first client; based on receiving an access request from a second client for the encrypted data, obtaining a second authorization code and an incomplete key from the access request; based on the second authorization code being the same as the first authorization code and the second authorization code being valid, generating a second key according to the incomplete key and the first part of the first key corresponding to the encrypted data decrypting the encrypted data according to the second key to obtain the plaintext data; and transmitting, to the second client, the decrypted plaintext data.

Abstract: A signature generation method performed by an electronic apparatus is provided. A message abstract is generated according to a to-be-signed message and eigenvalues of a plurality of signature parties, an eigenvalue of a signature party being based on a random number of the signature party. Public keys and sub signatures of the plurality of signature parties are obtained, and a sub signature of the signature party is based on the random number of the signature party, the message abstract, and private keys of the plurality of signature parties. An aggregation public key is generated according to the public keys of the plurality of signature parties, and a length of the aggregation public key is less than a length of the plurality of public keys after splicing. An aggregation signature is generated according to a sum value of the plurality of sub signatures and the message abstract.

Abstract: A method for manufacturing an electronic device including a semiconductor memory may include forming a first carbon electrode material, surface-treating the first carbon electrode material to decrease a surface roughness of the first carbon electrode material, and forming a second carbon electrode material on the treated surface of the first carbon electrode material. The second carbon electrode material may have a thickness that is greater than a thickness of the first carbon electrode material.

Abstract: A service processing method, apparatus, and storage medium of a blockchain system are provided. The service processing method includes obtaining authentication information of a service participant; determining whether data in the authentication information of the service participant is updated; generating, based on the data in the authentication information of the service participant being updated, a notification message according to the updated data; and transmitting the notification message to a service processing node subnetwork, the notification message instructing one or more service processing nodes in the service processing node subnetwork to process a service request according to updated authentication information of the service participant.

Abstract: A data processing method, an apparatus, a device, and a medium in a blockchain fund settlement system are provided. A data processing method in a blockchain fund settlement system, performed by at least one processor of a settlement institution terminal, includes: querying, on a blockchain, a settlement request that is to be processed by the settlement institution terminal between a fund settlement initiator and a fund settlement recipient, the settlement request being generated by an initiator terminal of the fund settlement initiator and recorded on the blockchain; receiving the settlement request based on the querying; and generating a settlement result of a settlement performed according to the settlement request, and recording the settlement result on the blockchain.

Abstract: Embodiments of this application disclose methods, systems, and devices for electronic note identifier allocation and electronic note generation. In one aspect, an electronic note identifier allocation method is performed by a processing node of a distributed computer system. The processing node receives an electronic note identifier application request initiated by a service node. The processing node generates an electronic note identifier set in response to the electronic note identifier application request. The processing node also synchronizes the electronic note identifier in the electronic note identifier set. After the synchronizing, the processing node further the electronic note identifier in the electronic note identifier set to the service node.

Abstract: This application provides a method for issuing a digital certificate performed by a digital certificate issuing center that includes a public-private key generation module and an authentication module. The method includes: receiving a public-private key request from a node in a blockchain network; generating a public key and a private key of the node by using the public-private key generation module, and transmitting the public and private keys to the node; receiving the public key of the node and registration information of the node, and authenticating the registration information by using the authentication module; and generating, in accordance with a determination that the authentication succeeds, a digital certificate of the node by using the authentication module, and transmitting the digital certificate to the node. The embodiments of this application can improve the probative value of an issued digital certificate, thereby improving the security of data exchange in a blockchain network.

Abstract: An electronic device includes a semiconductor memory. The semiconductor memory includes word lines, bit lines intersecting the word lines, and memory cells coupled to and disposed between the word lines and the bit lines, each of the memory cells including a variable resistance layer in an amorphous state regardless of a value of data stored in the memory cells. In a reset operation, a memory cell is programmed to a high-resistance amorphous state by applying, to the memory cell, a sub-threshold voltage that is lower than a lowest threshold voltage among threshold voltages of the memory cells.

Abstract: A chalcogenide material may include germanium (Ge), arsenic (As), selenium (Se) and from 0.5 to 10 at % of at least one group 3 element. A variable resistance memory device may include a first electrode, a second electrode, and a chalcogenide film interposed between the first electrode and the second electrode and including from 0.5 to 10 at % of at least one group 3 element. In addition, an electronic device may include a semiconductor memory. The semiconductor memory may include a column line, a row line intersecting the column line, and a memory cell positioned between the column line and the row line, wherein the memory cell comprises a chalcogenide film including germanium (Ge), arsenic (As), selenium (Se), and from 0.5 to 10 at % of at least one group 3 element.

Abstract: An electronic device includes a semiconductor memory. The semiconductor memory includes a word line, a bit line, and a memory cell coupled to and disposed between the word line and the bit line, the memory cell including a variable resistance layer that remains in an amorphous state regardless of a value of data stored in the memory cell. In a reset operation, the memory cell is programmed to a high-resistance amorphous state by applying, to the memory cell, a sub-threshold voltage that is greater than 0.7 time of a threshold voltage of the memory cell and is smaller than 0.95 time of the threshold voltage.