Patents by Inventor Jun ZANG

Jun ZANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11360696
    Abstract: This application describes a system startup method and apparatus. The method may include establishing a mapping relationship between address space of a first storage device and address space of a second storage device. The method may also include receiving a read/write request sent to the first storage device. Furthermore, the method may include when the read/write request is a write request for the first storage device, writing data to a second address in the second storage device based on a first address in the first storage device in the write request and the mapping relationship. Or, when the read/write request is a read request for the first storage device, determining whether data has been written to a fourth address corresponding to a third address in the read request. The method may further include reading data from the fourth address when the data has been written to the fourth address, or reading data from the third address when no data has been written to the fourth address.
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: June 14, 2022
    Assignee: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Leizhen Zang, Chaozhu Tong, Jun Xue
  • Patent number: 11344243
    Abstract: An artificial intelligence self-learning-based static electrocardiography analysis method and apparatus, the method comprising data preprocessing, heartbeat detection, heartbeat classification based on a depth learning method, heartbeat verification, heartbeat waveform feature detection, measurement and analysis of electrocardiography events, and finally automatic output of reporting data, realizing an automated static electrocardiograph analysis method having a complete and rapid flow. The static electrocardiography analysis method can also record modification information of an automatic analysis result, collect modified data, and feed same back to the depth learning model to continue training, thereby continuously making improvements and improving the accuracy of the automatic analysis method.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: May 31, 2022
    Assignee: Shanghai Lepu CloudMed Co., Ltd
    Inventors: Jun Cao, Kaifeng Zang, Youchao Lu, Pengfei Zhao, Erbin Wang, Chang Liu
  • Patent number: 11264095
    Abstract: An electronic device includes a semiconductor memory. The semiconductor memory includes a word line, a bit line, and a memory cell coupled to and disposed between the word line and the bit line, the memory cell including a variable resistance layer that remains in an amorphous state regardless of a value of data stored in the memory cell. In a reset operation, the memory cell is programmed to a high-resistance amorphous state by applying, to the memory cell, a sub-threshold voltage that is greater than 0.7 time of a threshold voltage of the memory cell and is smaller than 0.95 time of the threshold voltage.
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: March 1, 2022
    Assignee: SK hynix Inc.
    Inventors: Sang Hyun Ban, Beom Seok Lee, Woo Tae Lee, Tae Hoon Kim, Hwan Jun Zang, Hye Jung Choi
  • Patent number: 11223477
    Abstract: A data sharing method, server and storage medium including receiving a first part of a first key from a first client, the first key corresponding to encrypted data uploaded to a block of an information sharing system generating a first authorization code corresponding to the encrypted data; transmitting the first authorization code to the first client; based on receiving an access request from a second client for the encrypted data, obtaining a second authorization code and an incomplete key from the access request; based on the second authorization code being the same as the first authorization code and the second authorization code being valid, generating a second key according to the incomplete key and the first part of the first key corresponding to the encrypted data decrypting the encrypted data according to the second key to obtain the plaintext data; and transmitting, to the second client, the decrypted plaintext data.
    Type: Grant
    Filed: November 14, 2019
    Date of Patent: January 11, 2022
    Assignee: TENCENT TECHNOLOGY (SHENZHEN) COMPANY LTD
    Inventors: Jian Jun Zhang, Wen Wei Zou, Mao Cai Li, Zi Chao Tang, Jun Zang, Qing Zheng Shang, Zong You Wang, Qing Qin
  • Patent number: 11128450
    Abstract: A signature generation method performed by an electronic apparatus is provided. A message abstract is generated according to a to-be-signed message and eigenvalues of a plurality of signature parties, an eigenvalue of a signature party being based on a random number of the signature party. Public keys and sub signatures of the plurality of signature parties are obtained, and a sub signature of the signature party is based on the random number of the signature party, the message abstract, and private keys of the plurality of signature parties. An aggregation public key is generated according to the public keys of the plurality of signature parties, and a length of the aggregation public key is less than a length of the plurality of public keys after splicing. An aggregation signature is generated according to a sum value of the plurality of sub signatures and the message abstract.
    Type: Grant
    Filed: November 7, 2019
    Date of Patent: September 21, 2021
    Assignee: TENCENT TECHNOLOGY (SHENZHEN) COMPANY LTD
    Inventors: Jian Jun Zhang, Li Lei Wu, Hai Tao Tu, Mao Cai Li, Li Kong, Zi Chao Tang, Wen Wei Zou, Jun Zang
  • Publication number: 20210280781
    Abstract: A method for manufacturing an electronic device including a semiconductor memory may include forming a first carbon electrode material, surface-treating the first carbon electrode material to decrease a surface roughness of the first carbon electrode material, and forming a second carbon electrode material on the treated surface of the first carbon electrode material. The second carbon electrode material may have a thickness that is greater than a thickness of the first carbon electrode material.
    Type: Application
    Filed: August 4, 2020
    Publication date: September 9, 2021
    Inventors: Myoung Sub KIM, Tae Hoon KIM, Beom Seok LEE, Seung Yun LEE, Hwan Jun ZANG, Byung Jick CHO, Ji Sun HAN
  • Publication number: 20210243175
    Abstract: A service processing method, apparatus, and storage medium of a blockchain system are provided. The service processing method includes obtaining authentication information of a service participant; determining whether data in the authentication information of the service participant is updated; generating, based on the data in the authentication information of the service participant being updated, a notification message according to the updated data; and transmitting the notification message to a service processing node subnetwork, the notification message instructing one or more service processing nodes in the service processing node subnetwork to process a service request according to updated authentication information of the service participant.
    Type: Application
    Filed: April 20, 2021
    Publication date: August 5, 2021
    Applicant: TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED
    Inventors: Jun Zang, Jian Jun Zhang, Luo Hai Zheng, Jun Jie Shi, Hu Jia Chen, Zi Chao Tang, Yi Ge Cai, Qing Qin, Chuan Bing Dai, Hu Lan, Jin Long Chen
  • Publication number: 20210217004
    Abstract: A data processing method, an apparatus, a device, and a medium in a blockchain fund settlement system are provided. A data processing method in a blockchain fund settlement system, performed by at least one processor of a settlement institution terminal, includes: querying, on a blockchain, a settlement request that is to be processed by the settlement institution terminal between a fund settlement initiator and a fund settlement recipient, the settlement request being generated by an initiator terminal of the fund settlement initiator and recorded on the blockchain; receiving the settlement request based on the querying; and generating a settlement result of a settlement performed according to the settlement request, and recording the settlement result on the blockchain.
    Type: Application
    Filed: March 31, 2021
    Publication date: July 15, 2021
    Applicant: TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED
    Inventors: Yi Ge Cai, Jian Jun Zhang, Zi Chao Tang, Jun Zang, Qing Qin, Chen Yang, Jin Long Chen, Zi Jue Zhang, Shuai Zhang
  • Publication number: 20210203751
    Abstract: Embodiments of this application disclose methods, systems, and devices for electronic note identifier allocation and electronic note generation. In one aspect, an electronic note identifier allocation method is performed by a processing node of a distributed computer system. The processing node receives an electronic note identifier application request initiated by a service node. The processing node generates an electronic note identifier set in response to the electronic note identifier application request. The processing node also synchronizes the electronic note identifier in the electronic note identifier set. After the synchronizing, the processing node further the electronic note identifier in the electronic note identifier set to the service node.
    Type: Application
    Filed: March 12, 2021
    Publication date: July 1, 2021
    Inventors: Luohai ZHENG, Jiguang LU, Wangsheng ZHOU, Jianjun ZHANG, Junjie SHI, Hujia CHEN, Jun ZANG, Chuanbing DAI, Qing QIN, Yige CAI
  • Publication number: 20210167972
    Abstract: This application provides a method for issuing a digital certificate performed by a digital certificate issuing center that includes a public-private key generation module and an authentication module. The method includes: receiving a public-private key request from a node in a blockchain network; generating a public key and a private key of the node by using the public-private key generation module, and transmitting the public and private keys to the node; receiving the public key of the node and registration information of the node, and authenticating the registration information by using the authentication module; and generating, in accordance with a determination that the authentication succeeds, a digital certificate of the node by using the authentication module, and transmitting the digital certificate to the node. The embodiments of this application can improve the probative value of an issued digital certificate, thereby improving the security of data exchange in a blockchain network.
    Type: Application
    Filed: February 9, 2021
    Publication date: June 3, 2021
    Inventors: Jun ZANG, Jianjun Zhang, Luohai Zheng, Junjie Shi, Hujia Chen, Zichao Tang, Yige Cai, Qing Qin, Chuanbing Dai, Hu Lan, Jinlong Chen
  • Publication number: 20210110871
    Abstract: An electronic device includes a semiconductor memory. The semiconductor memory includes word lines, bit lines intersecting the word lines, and memory cells coupled to and disposed between the word lines and the bit lines, each of the memory cells including a variable resistance layer in an amorphous state regardless of a value of data stored in the memory cells. In a reset operation, a memory cell is programmed to a high-resistance amorphous state by applying, to the memory cell, a sub-threshold voltage that is lower than a lowest threshold voltage among threshold voltages of the memory cells.
    Type: Application
    Filed: December 22, 2020
    Publication date: April 15, 2021
    Inventors: Sang Hyun Ban, Beom Seok Lee, Woo Tae Lee, Tae Hoon Kim, Hwan Jun Zang, Hye Jung Choi
  • Publication number: 20210083185
    Abstract: A chalcogenide material may include germanium (Ge), arsenic (As), selenium (Se) and from 0.5 to 10 at % of at least one group 3 element. A variable resistance memory device may include a first electrode, a second electrode, and a chalcogenide film interposed between the first electrode and the second electrode and including from 0.5 to 10 at % of at least one group 3 element. In addition, an electronic device may include a semiconductor memory. The semiconductor memory may include a column line, a row line intersecting the column line, and a memory cell positioned between the column line and the row line, wherein the memory cell comprises a chalcogenide film including germanium (Ge), arsenic (As), selenium (Se), and from 0.5 to 10 at % of at least one group 3 element.
    Type: Application
    Filed: April 22, 2020
    Publication date: March 18, 2021
    Inventors: Gwang Sun JUNG, Sang Hyun BAN, Jun Ku AHN, Beom Seok LEE, Young Ho LEE, Woo Tae LEE, Jong Ho LEE, Hwan Jun ZANG, Sung Lae CHO, Ye Cheon CHO, Uk HWANG
  • Publication number: 20210020244
    Abstract: An electronic device includes a semiconductor memory. The semiconductor memory includes a word line, a bit line, and a memory cell coupled to and disposed between the word line and the bit line, the memory cell including a variable resistance layer that remains in an amorphous state regardless of a value of data stored in the memory cell. In a reset operation, the memory cell is programmed to a high-resistance amorphous state by applying, to the memory cell, a sub-threshold voltage that is greater than 0.7 time of a threshold voltage of the memory cell and is smaller than 0.95 time of the threshold voltage.
    Type: Application
    Filed: September 30, 2020
    Publication date: January 21, 2021
    Inventors: Sang Hyun BAN, Beom Seok LEE, Woo Tae LEE, Tae Hoon KIM, Hwan Jun ZANG, Hye Jung CHOI
  • Patent number: 10825519
    Abstract: An electronic device includes a semiconductor memory. The semiconductor memory includes a word line, a bit line, and a memory cell coupled to and disposed between the word line and the bit line, the memory cell including a variable resistance layer that remains in an amorphous state regardless of a value of data stored in the memory cell. In a reset operation, the memory cell is programmed to a high-resistance amorphous state by applying, to the memory cell, a sub-threshold voltage that is greater than 0.7 time of a threshold voltage of the memory cell and is smaller than 0.95 time of the threshold voltage.
    Type: Grant
    Filed: November 18, 2019
    Date of Patent: November 3, 2020
    Assignee: SK hynix Inc.
    Inventors: Sang Hyun Ban, Beom Seok Lee, Woo Tae Lee, Tae Hoon Kim, Hwan Jun Zang, Hye Jung Choi
  • Publication number: 20200084037
    Abstract: A data sharing method, server and storage medium including receiving a first part of a first key from a first client, the first key corresponding to encrypted data uploaded to a block of an information sharing system generating a first authorization code corresponding to the encrypted data; transmitting the first authorization code to the first client; based on receiving an access request from a second client for the encrypted data, obtaining a second authorization code and an incomplete key from the access request; based on the second authorization code being the same as the first authorization code and the second authorization code being valid, generating a second key according to the incomplete key and the first part of the first key corresponding to the encrypted data decrypting the encrypted data according to the second key to obtain the plaintext data; and transmitting, to the second client, the decrypted plaintext data.
    Type: Application
    Filed: November 14, 2019
    Publication date: March 12, 2020
    Applicant: TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED
    Inventors: Jian Jun ZHANG, Wen Wei Zou, Mao Cai Li, Zi Chao Tang, Jun Zang, Qing Zheng Shang, Zong You Wang, Qing Qin
  • Publication number: 20200076586
    Abstract: A signature generation method performed by an electronic apparatus is provided. A message abstract is generated according to a to-be-signed message and eigenvalues of a plurality of signature parties, an eigenvalue of a signature party being based on a random number of the signature party. Public keys and sub signatures of the plurality of signature parties are obtained, and a sub signature of the signature party is based on the random number of the signature party, the message abstract, and private keys of the plurality of signature parties. An aggregation public key is generated according to the public keys of the plurality of signature parties, and a length of the aggregation public key is less than a length of the plurality of public keys after splicing. An aggregation signature is generated according to a sum value of the plurality of sub signatures and the message abstract.
    Type: Application
    Filed: November 7, 2019
    Publication date: March 5, 2020
    Applicant: TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED
    Inventors: Jian Jun ZHANG, Li Lei WU, Hai Tao TU, Mao Cai LI, Li KONG, Zi Chao TANG, Wen Wei ZOU, Jun ZANG
  • Patent number: 10312399
    Abstract: A photodiode having a reduced dark current includes a semiconductor layer, a first contact part, a second contact part, and an active region. The first contact part disposed in a first region of the semiconductor layer includes an interlayer and at least one metal layer. The second contact part disposed in a second region of the semiconductor layer includes at least one metal layer. The active region is disposed between the first contact part and the second contact part. The first contact part and the second contact part are arranged asymmetrical to each other.
    Type: Grant
    Filed: March 6, 2018
    Date of Patent: June 4, 2019
    Assignees: SK HYNIX INC., KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
    Inventors: Hyun-Yong Yu, Hwan-Jun Zang
  • Publication number: 20180254370
    Abstract: A photodiode having a reduced dark current includes a semiconductor layer, a first contact part, a second contact part, and an active region. The first contact part disposed in a first region of the semiconductor layer includes an interlayer and at least one metal layer. The second contact part disposed in a second region of the semiconductor layer includes at least one metal layer. The active region is disposed between the first contact part and the second contact part. The first contact part and the second contact part are arranged asymmetrical to each other.
    Type: Application
    Filed: March 6, 2018
    Publication date: September 6, 2018
    Inventors: Hyun-Yong YU, Hwan-Jun ZANG