Abstract: A semiconductor device package is described that includes a power consuming device (such as an SOC device). The power consuming device may include one or more current consuming elements. A passive device may be coupled to the power consuming device. The passive device may include a plurality of passive elements formed on a semiconductor substrate. The passive elements may be arranged in an array of structures on the semiconductor substrate. The power consuming device and the passive device may be coupled using one or more terminals. The passive device and power consuming device coupling may be configured in such a way that the power consuming device determines functionally the way the passive device elements will be used.

Abstract: Multiple component package structures are described in which an interposer chiplet is integrated to provide fine routing between components. In an embodiment, the interposer chiplet and a plurality of conductive vias are encapsulated in an encapsulation layer. A first plurality of terminals of the first and second components may be in electrical connection with the plurality of conductive pillars and a second plurality of terminals of first and second components may be in electrical connection with the interposer chiplet.

Abstract: Chip structures and electronic modules including a power delivery network (PDN) routing structure and signal routing structure to balance power, signaling, and thermal requirements are described. In an embodiment, the chip includes a device layer, a PDN routing structure on top of the device layer, and a signal routing structure underneath the device layer.

Abstract: Chip sealing structures and methods of manufacture are described. In an embodiment, a chip structure includes a main body area formed of a substrate, a back-end-of-the-line (BEOL) build-up structure spanning over the substrate, and chip edge sidewalls extending from a back surface of the substrate to a top surface of the BEOL build-up structure and laterally surrounding the substrate and the BEOL build-up structure. In accordance with embodiments, the chip structure may further include a conformal sealing layer covering at least a first chip edge sidewall of the chip edge sidewalls and a portion of the top surface of the BEOL build-up structure, and forming a lip around the top surface of the BEOL build-up structure.

Abstract: Provided are a digital twinning method and system for a scene flow based on a dynamic trajectory flow, which belong to the field of traffic control. The method includes: extracting and identifying a target semantic trajectory with a detecting and tracking integrated multi-modal fusion and perception enhancement network; extracting road traffic semantics, so as to obtain a highly parameterized virtual road layout top view; obtaining a road layout traffic semantic grid encoding vector based on the virtual road layout top view; constructing a target coupling relation model; constructing a traffic force constraint model; constructing a long short term memory trajectory prediction network; predicting a motion trajectory of a target with the long short term memory trajectory prediction network, so as to obtain the predicted motion trajectory; and obtaining a digital twin of the scene flow based on trajectory extraction, semantic identification and the predicted motion trajectory.

Abstract: Multiple chip module (MCM) structures are described. In an embodiment, a module includes a first and second components on the top side of a module substrate, a stiffener structure mounted on the top side of the module substrate, and a lid mounted on the stiffener structure and covering the first component and the second component. The stiffener is joined to the lid within a trench formed in a roof of the lid.

Abstract: Electronic package structures and systems are described in which a 3D interconnect structure is integrated into a package redistribution layer and/or chiplet for power and signal delivery to a die. Such structures may significantly improve input output (IO) density and routing quality for signals, while keeping power delivery feasible.

Abstract: Multi-die structures and methods of fabrication are described. In an embodiment, a multi-die structure includes a first die, a second die, and die-to-die routing connecting the first die to the second die. The die-to-die interconnection may be monolithically integrated as a chip-level die-to-die routing, or external package-level die-to-die routing.

Abstract: Various embodiments of an integrated circuit (IC) die package are disclosed. An IC die package includes an IC die, an interposer structure electrically connected to the IC die, a first bonding structure, a second bonding structure, and a molding compound layer. The first bonding structure includes a first dielectric layer disposed on the IC die and a first conductive plug disposed in the first dielectric layer. The second bonding structure includes a second dielectric layer disposed on the interposer structure and a second conductive plug disposed in the second dielectric layer. The molding compound layer includes a mold region and a mold cavity.

Abstract: A semiconductor device package is described that includes a power consuming device (such as an SOC device). The power consuming device may include one or more current consuming elements. A passive device may be coupled to the power consuming device. The passive device may include a plurality of passive elements formed on a semiconductor substrate. The passive elements may be arranged in an array of structures on the semiconductor substrate. The power consuming device and the passive device may be coupled using one or more terminals. The passive device and power consuming device coupling may be configured in such a way that the power consuming device determines functionally the way the passive device elements will be used.

Abstract: Integrated circuit (IC) structures, electronic modules, and methods of fabrication are described in which direct bonded interfaces are removed at corners or edges to counteract the potential for non-bonding or delamination. This can be accomplished during singulation, in which a side recess is formed through an entire thickness of an electronic component and into a direct bonded die, followed by final singulation of the IC structure.

Abstract: Integrated circuit (IC) structure, IC die structures and methods of fabrication are described in which one or more edge recesses are formed in an IC die. Upon direct bonding to an electronic component, a molding compound can be applied to the bonded structure where the molding compound fills the one or more edge recesses and encroached underneath the IC die and between the IC die and the electronic component.

Abstract: Electronic package structures and systems are described in which a 3D interconnect structure is integrated into a package redistribution layer and/or chiplet for power and signal delivery to a die. Such structures may significantly improve input output (IO) density and routing quality for signals, while keeping power delivery feasible.

Abstract: Electronic packages and electronic systems are described in which a package redistribution layer of the electronic package includes structural features such a via line connections to reduce stress concentration, particularly when the package redistribution layer is formed of organic dielectric materials.

Abstract: Stitched die structures, and methods for interconnecting die are described. In an embodiment, a stitched die structure includes a semiconductor substrate that includes a first die area of a first die and a second die area of a second die separate from the first die area. A back-end-of-the-line (BEOL) build-up structure spans over the first die area and the second die area, and includes a first metallic seal directly over a first peripheral area of the first die area, a second metallic seal directly over a second peripheral area of the second die area, and a die-to-die routing extending through the first metallic seal and the second metallic seal to electrically connect the first die to the second die.

Abstract: A fluctuation belt ecological slope protection system that responds to hydrological variation includes a runoff treatment system and an ecological floating island system. The runoff treatment system includes a grass planting side ditch and a water accumulation pit-pond. The ecological floating island system includes an ecological floating island and an ecological gabion base. The ecological floating island includes a flexible substrate, and aquatic plants. The ecological gabion base is positioned below the ecological floating island. The ecological protection system is suitable for a fluctuation belt and consists of a runoff treatment system and a separable ecological floating island system.

Abstract: Modules and methods of assembly are described. A module includes a lid mounted on a module substrate and covering a component. A stiffener structure may optionally be mounted between the lid and module substrate. A recess can be formed in any of an outer wall bottom surface of the lid, and top or bottom surface of the stiffener structure such that an adhesive layer at least partially fills the recess.

Abstract: Reconstructed 3DIC structures and methods of manufacture are described. In an embodiment, one or more dies in each package level of a 3DIC are both functional chips and/or stitching devices for two or more dies in an adjacent package level. Thus, each die can function as a communication bridge between two other dies/chiplets in addition to performing a separate chip core function.

Abstract: Multi-die structures and methods of fabrication are described. In an embodiment, a multi-die structure includes a first die, a second die, and die-to-die routing connecting the first die to the second die. The die-to-die interconnection may be monolithically integrated as a chip-level die-to-die routing, or external package-level die-to-die routing.

Abstract: Flexible packages and electronic devices with integrated flexible packages are described. In an embodiment, a flexibly package includes a first die and a second die encapsulated in a molding compound layer. A compliant redistribution layer (RDL) spans the molding compound layer and both dies, and includes electrical routing formed directly on landing pads of the dies. A notch is formed in the molding compound layer between the dies to facilitate flexure of the compliant RDL.