Patents by Inventor Junbao Wang

Junbao Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250095744
    Abstract: A memory device includes a memory cell array having stacked first and second memory decks; and a peripheral circuit coupled to the memory cell array and configured to: when performing a program operation on a selected memory cell layer in the first memory deck, apply a voltage to a word line layer corresponding to the selected memory cell layer and apply a first voltage to a word line layer corresponding to an unselected memory cell layer in the first memory deck; apply a second voltage to the word line layer corresponding to the plurality of memory cell layers in the second memory deck; and apply a third voltage to the dummy word line layer corresponding to the at least one dummy memory cell layer at the junction position of the first memory deck and the second memory deck. The first voltage exceeds the second voltage, which exceeds the third voltage.
    Type: Application
    Filed: January 10, 2024
    Publication date: March 20, 2025
    Inventors: Jiameng CUI, Jianquan JIA, Kaikai YOU, Junbao WANG, Wenhao XIONG, Wei QI, An ZHANG
  • Patent number: 12254930
    Abstract: The embodiments of the disclosure provide a control method and apparatus for a memory, and a storage medium. The memory has memory blocks, and each memory block has memory strings. Each of the memory strings includes a channel layer with an N-type doped top region. In a memory block, a bit line erasing voltage is applied to a select bit line, and an erasing prohibition voltage is applied to an unselect bit line. A top select gate voltage lower than the bit line erasing voltage is applied to a top select gate. When a word line erasing voltage lower than the bit line erasing voltage is applied to the corresponding word line connected to a memory string corresponding to the select bit line and the unselect bit line, the memory string corresponding to the select bit line is erased.
    Type: Grant
    Filed: December 15, 2022
    Date of Patent: March 18, 2025
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Junbao Wang, Jianquan Jia
  • Publication number: 20250069662
    Abstract: The present disclosure provides a memory device, a memory system, and an operation method of a memory device, and relates to the technical field of semiconductor chips. The memory device includes a memory cell array including a source layer, a bottom select gate layer, and a gate layer, and the bottom select gate layer is located between the source layer and the gate layer, wherein the bottom select gate layer includes a plurality of bottom select gates, and a bottom select gate of a first memory string and a bottom select gate of a second memory string are connected with a same select line; and a peripheral circuit coupled to the memory cell array, wherein the peripheral circuit is configured to apply a selection voltage to the select line to control the first memory string and the second memory string.
    Type: Application
    Filed: December 18, 2023
    Publication date: February 27, 2025
    Inventors: Jianquan JIA, XiangNan ZHAO, Feng XU, Yuanyuan MIN, Ying CUI, Chenhui LI, Wei QI, Junbao WANG, Lei JIN
  • Publication number: 20250068558
    Abstract: The present disclosure provides a method for operating a memory, a memory and a memory system, and relates to the technical field of semiconductor chip. The method includes: during the erase phase, applying an erase voltage to the word line, and applying an erase voltage to the select line coupled to a target select gate; during the program phase for select gate, applying a pass voltage to the word line, and applying a program voltage to the select line coupled to the target select gate.
    Type: Application
    Filed: December 4, 2023
    Publication date: February 27, 2025
    Inventors: Jianquan JIA, XiangNan ZHAO, Yuanyuan MIN, Ying CUI, Kaikai YOU, Chenhui LI, Wei QI, Jiameng CUI, Lei GUAN, Junbao WANG, Lei JIN
  • Publication number: 20250069673
    Abstract: According to one aspect, a method of operating a memory is provided. The method may include applying a first power supply voltage to a common source during a program precharge process. The method may include applying a first voltage to a first bottom gate line and applying a second voltage to a second bottom gate line starting at a first moment of the program precharge process. The method may include applying a second power supply voltage to the first bottom gate line and applying a third voltage to the second bottom gate line after the first moment of the program precharge process.
    Type: Application
    Filed: December 15, 2023
    Publication date: February 27, 2025
    Inventors: Junbao Wang, Jianquan Jia, Yuanyuan Min, Xiangnan Zhao, Ying Cui, Kaikai You, Jiameng Cui, Lei Guan, Chenhui Li, An Zhang, Lei Jin
  • Publication number: 20250029660
    Abstract: The disclosure provides a programming method of a memory, a memory and a memory system, which relate to the technical field of semiconductor chips. The programming method comprises: applying a program voltage to a first word line coupled to a plurality of memory cells of a first memory cell slice and a plurality of memory cells of a second memory cell slice; and during a stage of applying the program voltage to the first word line, applying a turn-on voltage to a first select line and a second select line sequentially, wherein the first select line is coupled to a select transistor of the first memory cell slice, and the second select line is coupled to a select transistor of the second memory cell slice.
    Type: Application
    Filed: December 4, 2023
    Publication date: January 23, 2025
    Inventors: Jianquan JIA, Junbao WANG, Hongtao LIU, Lei JIN
  • Publication number: 20240321364
    Abstract: Implementations of the present disclosure disclose a memory operation method, a memory device, a memory system and an electronic apparatus. The memory device includes a memory stack structure, a select stack structure on the memory stack structure, a memory string including a first sub-string penetrating through the select stack structure, and a second sub-string penetrating through the memory stack structure, and including a first dummy memory cell adjacent to a plug, and a plurality of memory cells, a peripheral circuit connected with the memory string and configured to program the first dummy memory cell, and apply a first bias voltage to a first dummy word line coupled to the first dummy memory cell in a pre-charge stage of a program operation of one of the plurality of memory cells close to the plug.
    Type: Application
    Filed: July 18, 2023
    Publication date: September 26, 2024
    Inventors: Kaiwei Li, Jianquan Jia, Junbao Wang, An Zhang, Yali Song
  • Publication number: 20240164097
    Abstract: The disclosure provides a three-dimensional (3D) memory, a method of fabricating a 3D memory and a memory system. The 3D memory can include a stack including alternately stacked first dielectric layers and conductive layers, and a channel structure extending through the stack and including a second dielectric layer and a blocking layer disposed in this order from outside to inside. The second dielectric layer can have a dielectric constant greater than or equal to 3.9.
    Type: Application
    Filed: December 29, 2022
    Publication date: May 16, 2024
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Jianquan JIA, Weiming CHEN, Weiwei CHU, Junbao WANG, Kaiwei LI, Wenhao XIONG, Lei JIN
  • Publication number: 20240112738
    Abstract: Disclosed herein are memory device, method for program operations. In an aspect, a memory device comprises a memory configured to store a program code and a processor. The processor is configured to perform a first programming to a first cell of the memory device by incremental step pulse programming (ISPP) with a first step voltage. The processor is further configured to perform a second programming to a second cell of the memory device by ISPP with a second step voltage. The first step voltage is larger than the second step voltage. The first cell corresponds to a first target voltage and the second cell corresponds to a second target voltage. The first cell corresponds to a first target voltage and the second cell corresponds to a second target voltage.
    Type: Application
    Filed: September 30, 2022
    Publication date: April 4, 2024
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Ying HUANG, Hongtao LIU, Yuanyuan MIN, Junbao WANG
  • Publication number: 20230282281
    Abstract: A three-dimensional memory device includes memory arrays stacking in a first direction. Each of the memory arrays includes a stack structure including interleaved conductive layers and first dielectric layers extending in a second direction perpendicular to the first direction and a third direction perpendicular to the first direction and the second direction. The conductive layers include word lines and a drain select gate line, and the drain select gate line is separated by a second dielectric layer in the second direction.
    Type: Application
    Filed: March 10, 2023
    Publication date: September 7, 2023
    Inventor: Junbao WANG
  • Publication number: 20230121846
    Abstract: The embodiments of the disclosure provide a control method and apparatus for a memory, and a storage medium. The memory has memory blocks, and each memory block has memory strings. Each of the memory strings includes a channel layer with an N-type doped top region. In a memory block, a bit line erasing voltage is applied to a select bit line, and an erasing prohibition voltage is applied to an unselect bit line. A top select gate voltage lower than the bit line erasing voltage is applied to a top select gate. When a word line erasing voltage lower than the bit line erasing voltage is applied to the corresponding word line connected to a memory string corresponding to the select bit line and the unselect bit line, the memory string corresponding to the select bit line is erased.
    Type: Application
    Filed: December 15, 2022
    Publication date: April 20, 2023
    Inventors: Junbao Wang, Jianquan Jia