Patents by Inventor Jun-Beom Park

Jun-Beom Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12234375
    Abstract: The present disclosure relates to a silicone-based coating composition, and a silicone-based release film including the same, wherein the silicone-based coating composition comprises a silicone-based compound represented by the following Chemical Formula 1 having a weight average molecular weight of greater than or equal to 25,000 g/mol and less than or equal to 70,000 g/mol: wherein R1 to R3 and n are described herein.
    Type: Grant
    Filed: August 26, 2021
    Date of Patent: February 25, 2025
    Assignee: LG Chem, Ltd.
    Inventors: Jun Hyoung Park, Jun Beom Park, Jihye Jung, Kwang Su Seo
  • Patent number: 12230816
    Abstract: A secondary battery case includes a recess part recessed downward, and a sealing part provided around the recess part when the secondary battery case is unfolded. At least portions of the sealing part are attached to each other to seal inner surfaces of the recess part from an outside. A secondary battery includes an electrode assembly and the secondary battery case. The recess part of the secondary battery case has a width that corresponds to a thickness of the electrode assembly.
    Type: Grant
    Filed: February 27, 2020
    Date of Patent: February 18, 2025
    Assignee: LG Energy Solution, Ltd.
    Inventors: Hyun Beom Kim, Jun Kyu Park, Jeong Min Ha, Gi Man Kim, Hyun Chul Ha
  • Publication number: 20240429359
    Abstract: The present invention relates to a micro LED package, a display having the same, and a method for manufacturing the display and, more specifically, to a micro LED package, a display having the same, and a method for manufacturing the display, in which a plurality of micro LEDs having different colors are packaged in a single pixel unit or a plurality of pixel units to facilitate connection to a driving connection electrode unit of the display. In the micro LED package and the display having the same according to the present invention, even if the size of the micro LED chips becomes small, the driving connection electrode unit of the display may be easily connected to the display driving connection electrode unit without rearranging or redesigning the driving connection electrode unit of the display, thereby making it possible to utilize the driving connection electrode unit of the existing display.
    Type: Application
    Filed: October 5, 2022
    Publication date: December 26, 2024
    Inventors: Tak JEONG, Jun Beom PARK
  • Publication number: 20240400787
    Abstract: The present invention relates to a monomer composition for synthesizing recycled plastic which comprises an aromatic diol compound, wherein a ratio of aromatic diol compound derivative impurity according to Equation 1 is 0.5% or less, wherein the aromatic diol compound has a purity of 99.25% or more, and the monomer composition for synthesizing recycled plastic is recovered from a polycarbonate-based resin, a preparation method thereof, and a recycled plastic, and molded product using the same.
    Type: Application
    Filed: April 12, 2023
    Publication date: December 5, 2024
    Applicant: LG CHEM, LTD.
    Inventors: Jun Beom PARK, Hyunyoung LEE, Hyun Cheol KIM
  • Publication number: 20240332030
    Abstract: A method of manufacturing a semiconductor device in which a conductive layer is formed over a semiconductor substrate, and a hard mask layer is formed. Some portions of the hard mask layer are selectively removed to form first patterns of the hard mask layer and a second pattern of the hard mask layer. A first shielding pattern that shields a first region of the semiconductor substrate is formed, and the portions of the conductive layer, exposed by the first shielding pattern and the second pattern of the hard mask layer are selectively removed to form a first conductive line pattern. A second shielding pattern that shields a second region of the semiconductor substrate is formed, and other portions of the conductive layer, exposed by the second shielding pattern and the first patterns of the hard mask layer are selectively removed to form second conductive line patterns.
    Type: Application
    Filed: August 10, 2023
    Publication date: October 3, 2024
    Inventor: Jun Beom PARK
  • Publication number: 20240218120
    Abstract: The present invention relates to a monomer composition for synthesizing recycled plastic which comprises an aromatic diol compound, wherein a ratio of aromatic diol compound derivative impurity according to Equation 1 is 2% or less, wherein a yield of the aromatic diol compound according to Equation 2 is 80% or more, and the monomer composition is recovered from a polycarbonate-based resin, a preparation method thereof, and a recycled plastic, and molded product using the same.
    Type: Application
    Filed: April 12, 2023
    Publication date: July 4, 2024
    Applicant: LG CHEM, LTD.
    Inventors: Jun Beom PARK, Hyunyoung LEE, Hyun Cheol KIM
  • Publication number: 20240218149
    Abstract: The present invention relates to a monomer composition for synthesizing recycled plastic which comprises an aromatic diol compound, wherein a ratio of aromatic diol compound derivative impurity according to Equation 1 is 10% or less, the monomer composition has a color coordinate b* of 0.01 to 2, and the monomer composition is recovered from a polycarbonate-based resin, a preparation method thereof, and a recycled plastic, and molded product using the same.
    Type: Application
    Filed: April 12, 2023
    Publication date: July 4, 2024
    Applicant: LG CHEM, LTD.
    Inventors: Hyunyoung LEE, Jun Beom PARK, Hyun Cheol KIM
  • Publication number: 20240124384
    Abstract: Provided is a method for preparing an asymmetric linear carbonate, the method comprising: subjecting two kinds of different symmetric linear carbonates to a transesterification reaction in the presence of a metal alkoxide catalyst to prepare an asymmetric linear carbonate, wherein the metal of the metal alkoxide is at least one selected from the group consisting of aluminum (Al), magnesium (Mg), germanium (Ge), gallium (Ga), cobalt (Co), calcium (Ca), hafnium (Hf), iron (Fe), nickel (Ni), niobium (Nb), molybdenum (Mo), lanthanum (La), rhenium (Re), scandium (Sc), silicon (Si), tantalum (Ta), tungsten (W), yttrium (Y), zirconium (Zr) and vanadium (V). Also provided is an asymmetric linear carbonate including the metal alkoxide catalyst.
    Type: Application
    Filed: November 22, 2022
    Publication date: April 18, 2024
    Inventors: Hyunyoung LEE, Jun Beom PARK, Hyun Cheol KIM
  • Publication number: 20230406811
    Abstract: The present disclosure relates to a method for preparing an asymmetric linear carbonate, which comprises subjecting two different symmetrical linear carbonates to a transesterification reaction in the presence of a base catalyst having a heterocyclic structure to prepare an asymmetric linear carbonate.
    Type: Application
    Filed: July 8, 2022
    Publication date: December 21, 2023
    Inventors: Jun Beom Park, Hyunyoung Lee, Hyun Cheol Kim
  • Publication number: 20230373899
    Abstract: The present specification relates to a method for preparing an asymmetric linear carbonate.
    Type: Application
    Filed: June 28, 2022
    Publication date: November 23, 2023
    Inventors: Jun Beom PARK, Hyunyoung LEE, Hyun Cheol KIM
  • Patent number: 11683925
    Abstract: A semiconductor device includes first and second fin type patterns, first and second gate patterns intersecting the first and second fin type patterns, third and fourth gate patterns intersecting the first fin type pattern between the first and the second gate patterns, a fifth gate pattern intersecting the second fin type pattern, a sixth gate pattern intersecting the second fin type pattern, first to third semiconductor patterns disposed among the first, the third, the fourth and the second gate patterns, and fourth to sixth semiconductor patterns disposed among the first, the fifth, the sixth and the second gate patterns. The first semiconductor pattern to the fourth semiconductor pattern and the sixth semiconductor pattern are electrically connected to a wiring structure, and the fifth semiconductor pattern is not connected to the wiring structure.
    Type: Grant
    Filed: July 28, 2021
    Date of Patent: June 20, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung Gil Yang, Sun Wook Kim, Jun Beom Park, Tae Young Kim, Geum Jong Bae
  • Publication number: 20230155446
    Abstract: Disclosed is a direct slot cooling system for motors, including a stator configured to expand an inner slot space of a stator core where a coil is wound to form a cooling slot through which a cooling fluid passes; a rotor coupled to a center of the stator to rotate; and a housing coupled to left and right sides of the stator to form a cooling jacket in watertight communication with a cooling slot so that a cooling fluid circulates in the cooling jacket.
    Type: Application
    Filed: October 27, 2022
    Publication date: May 18, 2023
    Applicant: KYUNGPOOK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Hong Soon CHOI, II Seouk PARK, Chang Hoon SEOK, Jun Beom PARK, Gui Hwan KIM, Jong Hui LEE, Jong Hyeon SON
  • Publication number: 20230151123
    Abstract: The present disclosure provides a photocurable composition, which has excellent coatability and is capable of providing a coating layer having excellent surface quality and thickness uniformity, a coating layer including a cured product of the photocurable composition, and a substrate for a semiconductor process including the coating layer.
    Type: Application
    Filed: July 22, 2021
    Publication date: May 18, 2023
    Applicant: LG CHEM, LTD.
    Inventors: Sang Hwan KIM, Jung Woo CHOI, Ki Seung SEO, Kwang Su SEO, Jun Beom PARK, Won Seup CHO
  • Publication number: 20230130656
    Abstract: A system is disclosed for a platform that enables the biological owner of health data to manage and control access to their health data. In an embodiment, biological owners can take possession of their own health data. They control the level of access to their own health data by third parties through the use of data blurring to fit within specific data ranges. They also control access to their data through data encryption. In another embodiment, the biological owner of the health data can provide access to their health data to third parties through an auction system. Such access would be provided based on price, time duration of access, or quality of data, as determined by the biological owner of the health data. Additionally, such access could be provided by the system managing the health data access for the biological owner of the health data.
    Type: Application
    Filed: October 27, 2022
    Publication date: April 27, 2023
    Inventors: Jun Beom Park, Vinay Manjunath Pai, Dhruv Bhandarkar Pai, John Paul Metzcar
  • Publication number: 20230094474
    Abstract: The present disclosure relates to a silicone-based coating composition, and a silicone-based release film including the same, wherein the silicone-based coating composition comprises a silicone-based compound represented by the following Chemical Formula 1 having a weight average molecular weight of greater than or equal to 25,000 g/mol and less than or equal to 70,000 g/mol: wherein R1 to R3 and n are described herein.
    Type: Application
    Filed: August 26, 2021
    Publication date: March 30, 2023
    Applicant: LG Chem, Ltd.
    Inventors: Jun Hyoung Park, Jun Beom Park, Jihye Jung, Kwang Su Seo
  • Patent number: 11332372
    Abstract: The present disclosure provides an apparatus capable of continuously producing carbon nanotubes having high crystallinity, a low residual catalyst content and a high aspect ratio. The apparatus for producing carbon nanotubes includes: a reaction unit configured to synthesize carbon nanotubes (CNTs), a supply unit configured to supply a carbon source to the reaction unit through a supply pipe; and a collection unit configured to collect carbon nanotubes discharged from the reaction unit, wherein the reaction unit may include a chemical vapor deposition reactor.
    Type: Grant
    Filed: July 8, 2020
    Date of Patent: May 17, 2022
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Seung Min Kim, Sung Hyun Lee, Jun Beom Park, Ji Hong Park, Dong Myeong Lee, Sook Young Moon, Hyeon Su Jeong
  • Publication number: 20210358923
    Abstract: A semiconductor device includes first and second fin type patterns, first and second gate patterns intersecting the first and second fin type patterns, third and fourth gate patterns intersecting the first fin type pattern between the first and the second gate patterns, a fifth gate pattern intersecting the second fin type pattern, a sixth gate pattern intersecting the second fin type pattern, first to third semiconductor patterns disposed among the first, the third, the fourth and the second gate patterns, and fourth to sixth semiconductor patterns disposed among the first, the fifth, the sixth and the second gate patterns. The first semiconductor pattern to the fourth semiconductor pattern and the sixth semiconductor pattern are electrically connected to a wiring structure, and the fifth semiconductor pattern is not connected to the wiring structure.
    Type: Application
    Filed: July 28, 2021
    Publication date: November 18, 2021
    Inventors: Jung Gil YANG, Sun Wook KIM, Jun Beom PARK, Tae Young KIM, Geum Jong BAE
  • Patent number: 11107822
    Abstract: A semiconductor device includes first and second fin type patterns, first and second gate patterns intersecting the first and second fin type patterns, third and fourth gate patterns intersecting the first fin type pattern between the first and the second gate patterns, a fifth gate pattern intersecting the second fin type pattern, a sixth gate pattern intersecting the second fin type pattern, first to third semiconductor patterns disposed among the first, the third, the fourth and the second gate patterns, and fourth to sixth semiconductor patterns disposed among the first, the fifth, the sixth and the second gate patterns. The first semiconductor pattern to the fourth semiconductor pattern and the sixth semiconductor pattern are electrically connected to a wiring structure, and the fifth semiconductor pattern is not connected to the wiring structure.
    Type: Grant
    Filed: December 20, 2019
    Date of Patent: August 31, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung Gil Yang, Sun Wook Kim, Jun Beom Park, Tae Young Kim, Geum Jong Bae
  • Publication number: 20210188643
    Abstract: The present disclosure provides an apparatus capable of continuously producing carbon nanotubes having high crystallinity, a low residual catalyst content and a high aspect ratio. The apparatus for producing carbon nanotubes includes: a reaction unit configured to synthesize carbon nanotubes (CNTs), a supply unit configured to supply a carbon source to the reaction unit through a supply pipe; and a collection unit configured to collect carbon nanotubes discharged from the reaction unit, wherein the reaction unit may include a chemical vapor deposition reactor.
    Type: Application
    Filed: July 8, 2020
    Publication date: June 24, 2021
    Inventors: Seung Min KIM, Sung Hyun LEE, Jun Beom PARK, Ji Hong PARK, Dong Myeong LEE, Sook Young MOON, Hyeon Su JEONG
  • Publication number: 20200365602
    Abstract: A semiconductor device includes first and second fin type patterns, first and second gate patterns intersecting the first and second fin type patterns, third and fourth gate patterns intersecting the first fin type pattern between the first and the second gate patterns, a fifth gate pattern intersecting the second fin type pattern, a sixth gate pattern intersecting the second fin type pattern, first to third semiconductor patterns disposed among the first, the third, the fourth and the second gate patterns, and fourth to sixth semiconductor patterns disposed among the first, the fifth, the sixth and the second gate patterns. The first semiconductor pattern to the fourth semiconductor pattern and the sixth semiconductor pattern are electrically connected to a wiring structure, and the fifth semiconductor pattern is not connected to the wiring structure.
    Type: Application
    Filed: December 20, 2019
    Publication date: November 19, 2020
    Inventors: Jung Gil YANG, Sun Wook KIM, Jun Beom PARK, Tae Young KIM, Geum Jong BAE