Patents by Inventor Junbiao PENG

Junbiao PENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170148821
    Abstract: In accordance with some embodiments of the disclosed subject matter, a TFT, a related TFT array substrate, fabricating methods thereof, a display panel and a display device containing the same are provided. A method for fabricating a TFT is provided, the method comprising: forming an initial conductive layer on a base substrate; performing an oxidization process to partially oxidize the initial conductive layer to form an oxidized insulating sub-layer and a non-oxidized conductive sub-layer; and forming an active layer, a source electrode and a drain electrode over the oxidized insulating sub-layer.
    Type: Application
    Filed: December 10, 2015
    Publication date: May 25, 2017
    Inventors: GUANGCAI YUAN, LIANGCHEN YAN, XIAOGUANG XU, LEI WANG, JUNBIAO PENG, LINFENG LAN
  • Publication number: 20170141193
    Abstract: The present disclosure provides a TFT, an array substrate, their manufacturing method, and a display device. The method for manufacturing the TFT includes a step of forming a pattern of a semiconductor active layer on a transparent substrate through a patterning process, and the pattern of the semiconductor active layer includes a lanthanum boride pattern.
    Type: Application
    Filed: October 9, 2015
    Publication date: May 18, 2017
    Applicants: BOE TECHNOLOGY GROUP CO., LTD., SOUTH CHINA UNIVERSITY OF TECHNOLOGY
    Inventors: Guangcai YUAN, Liangchen YAN, Xiaoguang XU, Lei WANG, Junbiao PENG, Linfeng LAN
  • Publication number: 20170077307
    Abstract: This disclosure discloses an oxide semiconductor thin film, a thin film transistor, a manufacturing method and a device, belonging to the field of flat panel display. The oxide semiconductor thin film is made of an oxide containing zirconium and indium. A method of manufacturing the oxide semiconductor thin film comprises preparing a target using the oxide containing zirconium and indium, and sputtering the target to obtain the oxide semiconductor thin film.
    Type: Application
    Filed: September 2, 2015
    Publication date: March 16, 2017
    Applicants: BOE TECHNOLOGY GROUP CO., LTD., SOUTH CHINA UNIVERSITY OF TECHNOLOGY
    Inventors: Guangcai YUAN, Liangchen YAN, Xiaoguang XU, Lei WANG, Junbiao PENG, Linfeng LAN