Abstract: The present invention discloses a shed tunnel structure for preventing a falling rock, including a shed tunnel body and a buffer plate for bearing impact of the falling rock, where the shed tunnel body includes a first supporting structure, and the first supporting structure is arranged on a side away from a ramp; one end of the buffer plate is connected to the ramp; a side face of the buffer plate close to the shed tunnel body is in movable contact with the first supporting structure, and the contact position is close to the other end of the buffer plate. The objective of resisting continuous impact of the falling rock can be achieved through the structural design.

Abstract: The technical solution discloses a preparation method for a solar cell and a silicon film. The preparation method comprises: forming a dielectric layer on a first main surface of a silicon substrate; forming a silicon film having a first conductive characteristic on the dielectric layer, the silicon film including a first region and a second region located outside the first region; and transforming the conductive characteristic of the first region from the first conductive characteristic to a second conductive characteristic, the first conductive characteristic being opposite to the second conductive characteristic. The preparation method simplifies a solar cell manufacturing process.

Abstract: Embodiments of the present disclosure provide a solar cell and a manufacturing method thereof, a processing method of an n-type doped silicon film, and a semiconductor device. The manufacturing method of the solar cell includes: providing a silicon wafer; forming an n-type doped silicon film on a first main surface of the silicon wafer at a first temperature, and simultaneously forming the n-type doped silicon film on at least a portion of surfaces of the silicon wafer except the first main surface due to wrapping around; performing a heat treatment on the n-type doped silicon film at a second temperature; etching and removing the n-type doped silicon film on the surfaces of the silicon wafer except the first main surface after performing the heat treatment; and preparing the solar cell by using the silicon wafer, the first temperature is lower than the second temperature.

Abstract: A continuous production device and method for a silane-modified sealing material are provided. The device includes a twin screw extruder set, a cooling unit, and a static mixing unit; where the twin screw extruder set includes at least two twin screw extruders in series, each of which is provided with at least two inlets and at least one vacuum port, the cooling unit is disposed between last two stages of the twin screw extruders, and an outlet of a last-stage twin screw extruder is connected to the static mixing unit.