Patents by Inventor Junbo Wu
Junbo Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210384366Abstract: Approaches for the metallization of solar cells and the resulting solar cells are described. In an example, a method of fabricating a solar cell involves forming a barrier layer on a semiconductor region disposed in or above a substrate. The semiconductor region includes monocrystalline or polycrystalline silicon. The method also involves forming a conductive paste layer on the barrier layer. The method also involves forming a conductive layer from the conductive paste layer. The method also involves forming a contact structure for the semiconductor region of the solar cell, the contact structure including at least the conductive layer.Type: ApplicationFiled: August 17, 2021Publication date: December 9, 2021Inventors: Richard Hamilton Sewell, David Aaron Randolph Barkhouse, Junbo Wu, Michael Cudzinovic, Paul Loscutoff, Joseph Behnke, Michel Arsène Olivier Ngamo Toko
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Patent number: 11133778Abstract: A method of high reverse current burn-in of solar cells and a solar cell with a burned-in bypass diode are described herein. In one embodiment, high reverse current burn-in of a solar cell with a tunnel oxide layer induces low breakdown voltage in the solar cell. Soaking a solar cell at high current can also reduce the difference in voltage of defective and non-defective areas of the cell.Type: GrantFiled: February 27, 2018Date of Patent: September 28, 2021Assignee: SunPower CorporationInventors: Michael J. Defensor, Xiuwen Tu, Junbo Wu, David D. Smith
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Patent number: 11127866Abstract: Approaches for the metallization of solar cells and the resulting solar cells are described. In an example, a method of fabricating a solar cell involves forming a barrier layer on a semiconductor region disposed in or above a substrate. The semiconductor region includes monocrystalline or polycrystalline silicon. The method also involves forming a conductive paste layer on the barrier layer. The method also involves forming a conductive layer from the conductive paste layer. The method also involves forming a contact structure for the semiconductor region of the solar cell, the contact structure including at least the conductive layer.Type: GrantFiled: June 1, 2016Date of Patent: September 21, 2021Assignees: SunPower Corporation, Total Marketing ServicesInventors: Richard Hamilton Sewell, David Aaron Randolph Barkhouse, Junbo Wu, Michael Cudzinovic, Paul Loscutoff, Joseph Behnke, Michel Arséne Olivier Ngamo Toko
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Publication number: 20180191298Abstract: A method of high reverse current burn-in of solar cells and a solar cell with a burned-in bypass diode are described herein. In one embodiment, high reverse current burn-in of a solar cell with a tunnel oxide layer induces low breakdown voltage in the solar cell. Soaking a solar cell at high current can also reduce the difference in voltage of defective and non-defective areas of the cell.Type: ApplicationFiled: February 27, 2018Publication date: July 5, 2018Inventors: Michael J. DEFENSOR, Xiuwen TU, Junbo WU, David D. SMITH
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Patent number: 9912290Abstract: A method of high reverse current burn-in of solar cells and a solar cell with a burned-in bypass diode are described herein. In one embodiment, high reverse current burn-in of a solar cell with a tunnel oxide layer induces low breakdown voltage in the solar cell. Soaking a solar cell at high current can also reduce the difference in voltage of defective and non-defective areas of the cell.Type: GrantFiled: September 26, 2012Date of Patent: March 6, 2018Assignee: SunPower CorporationInventors: Michael J Defensor, Xiuwen Tu, Junbo Wu, David Smith
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Publication number: 20160276504Abstract: Approaches for the metallization of solar cells and the resulting solar cells are described. In an example, a method of fabricating a solar cell involves forming a barrier layer on a semiconductor region disposed in or above a substrate. The semiconductor region includes monocrystalline or polycrystalline silicon. The method also involves forming a conductive paste layer on the barrier layer. The method also involves forming a conductive layer from the conductive paste layer. The method also involves forming a contact structure for the semiconductor region of the solar cell, the contact structure including at least the conductive layer.Type: ApplicationFiled: June 1, 2016Publication date: September 22, 2016Inventors: Richard Hamilton Sewell, David Aaron Randolph Barkhouse, Junbo Wu, Michael Cudzinovic, Paul Loscutoff, Joseph Behnke, Michel Arsène Olivier Ngamo Toko
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Patent number: 9437757Abstract: A method of fabricating a solar cell is disclosed. The method includes forming a polished surface on a silicon substrate and forming a first flowable matrix in an interdigitated pattern on the polished surface, where the polished surface allows the first flowable matrix to form an interdigitated pattern comprising features of uniform thickness and width. In an embodiment, the method includes forming the silicon substrate using a method such as, but not limited to, of diamond wire or slurry wafering processes. In another embodiment, the method includes forming the polished surface on the silicon substrate using a chemical etchant such as, but not limited to, sulfuric acid (H2SO4), acetic acid (CH3COOH), nitric acid (HNO3), hydrofluoric acid (HF) or phosphoric acid (H3PO4). In still another embodiment, the etchant is an isotropic etchant. In yet another embodiment, the method includes providing a surface of the silicon substrate with at most 500 nanometer peak-to-valley roughness.Type: GrantFiled: June 19, 2015Date of Patent: September 6, 2016Assignee: SunPower CorporationInventors: Genevieve A. Solomon, Scott Harrington, Kahn Wu, Paul Loscutoff, Junbo Wu, Steven Edward Molesa
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Publication number: 20160190364Abstract: Seed layers for solar cell conductive contacts and methods of forming seed layers for solar cell conductive contacts are described. For example, a solar cell includes a substrate. An emitter region is disposed above the substrate. A conductive contact is disposed on the emitter region and includes a conductive layer in contact with the emitter region. The conductive layer is composed of aluminum/silicon (Al/Si) particles having a composition of greater than approximately 15% Si with the remainder Al. In another example, a solar cell includes a substrate having a diffusion region at or near a surface of the substrate. A conductive contact is disposed above the diffusion region and includes a conductive layer in contact with the substrate. The conductive layer is composed of aluminum/silicon (Al/Si) particles having a composition of greater than approximately 15% Si with the remainder Al.Type: ApplicationFiled: March 4, 2016Publication date: June 30, 2016Inventors: Michael Cudzinovic, Junbo Wu, Xi Zhu
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Patent number: 9362427Abstract: Approaches for the metallization of solar cells and the resulting solar cells are described. In an example, a method of fabricating a solar cell involves forming a barrier layer on a semiconductor region disposed in or above a substrate. The semiconductor region includes monocrystalline or polycrystalline silicon. The method also involves forming a conductive paste layer on the barrier layer. The method also involves forming a conductive layer from the conductive paste layer. The method also involves forming a contact structure for the semiconductor region of the solar cell, the contact structure including at least the conductive layer.Type: GrantFiled: December 20, 2013Date of Patent: June 7, 2016Assignees: SunPower Corporation, Total Marketing ServicesInventors: Richard Hamilton Sewell, David Aaron Randolph Barkhouse, Junbo Wu, Michael Cudzinovic, Paul Loscutoff, Joseph Behnke, Michel Arsène Olivier Ngamo Toko
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Publication number: 20160079914Abstract: A photovoltaic (PV) system is disclosed. The PV system can include a first and a second tracker that includes a first and a second plurality of PV collection devices. The PV system can include a first motor configured to adjust an angle of the first tracker. The PV system can include an inverter coupled to an output of the first plurality of PV collection devices. The inverter can include a first local controller comprising control circuitry configured to control the first motor. In an example, the inverter can be a string inverter. In one example, the inverter can a block inverter coupled to an output of the first and second plurality of PV collection devices. The PV system can also include a power collection unit, where the power collection unit can be coupled to the first plurality of PV collection devices and include the first local controller.Type: ApplicationFiled: September 14, 2015Publication date: March 17, 2016Inventors: Junbo Wu, Keith Johnston, Chen-An Chen, Zachary S. Judkins
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Patent number: 9263601Abstract: Enhanced adhesion of seed layers for solar cell conductive contacts and methods of forming solar cell conductive contacts are described. For example, a method of fabricating a solar cell includes forming an adhesion layer above an emitter region of a substrate. A metal seed paste layer is formed on the adhesion layer. The metal seed paste layer and the adhesion layer are annealed to form a conductive layer in contact with the emitter region of the substrate. A conductive contact for the solar cell is formed from the conductive layer.Type: GrantFiled: December 21, 2012Date of Patent: February 16, 2016Assignee: SunPower CorporationInventors: Junbo Wu, Michael C. Johnson, Michael Cudzinovic, Joseph Behnke, Xi Zhu, David D. Smith, Richard Sewell Hamilton, Xiuwen Tu, Seung Bum Rim
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Publication number: 20150364625Abstract: A method of fabricating a solar cell is disclosed. The method includes forming a polished surface on a silicon substrate and forming a first flowable matrix in an interdigitated pattern on the polished surface, where the polished surface allows the first flowable matrix to form an interdigitated pattern comprising features of uniform thickness and width. In an embodiment, the method includes forming the silicon substrate using a method such as, but not limited to, of diamond wire or slurry wafering processes. In another embodiment, the method includes forming the polished surface on the silicon substrate using a chemical etchant such as, but not limited to, sulfuric acid (H2SO4), acetic acid (CH3COOH), nitric acid (HNO3), hydrofluoric acid (HF) or phosphoric acid (H3PO4). In still another embodiment, the etchant is an isotropic etchant. In yet another embodiment, the method includes providing a surface of the silicon substrate with at most 500 nanometer peak-to-valley roughness.Type: ApplicationFiled: June 19, 2015Publication date: December 17, 2015Inventors: Genevieve A. Solomon, Scott Harrington, Kahn Wu, Paul Loscutoff, Junbo Wu, Steven Edward Molesa
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Patent number: 9082925Abstract: A method of fabricating a solar cell is disclosed. The method includes forming a polished surface on a silicon substrate and forming a first flowable matrix in an interdigitated pattern on the polished surface, where the polished surface allows the first flowable matrix to form an interdigitated pattern comprising features of uniform thickness and width. In an embodiment, the method includes forming the silicon substrate using a method such as, but not limited to, of diamond wire or slurry wafering processes. In another embodiment, the method includes forming the polished surface on the silicon substrate using a chemical etchant such as, but not limited to, sulfuric acid (H2SO4), acetic acid (CH3COOH), nitric acid (HNO3), hydrofluoric acid (HF) or phosphoric acid (H3PO4). In still another embodiment, the etchant is an isotropic etchant. In yet another embodiment, the method includes providing a surface of the silicon substrate with at most 500 nanometer peak-to-valley roughness.Type: GrantFiled: March 13, 2013Date of Patent: July 14, 2015Assignee: SunPower CorporationInventors: Genevieve A. Solomon, Scott Harrington, Kahn Wu, Paul Loscutoff, Junbo Wu, Steven Edward Molesa
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Publication number: 20150179836Abstract: Approaches for the metallization of solar cells and the resulting solar cells are described. In an example, a method of fabricating a solar cell involves forming a barrier layer on a semiconductor region disposed in or above a substrate. The semiconductor region includes monocrystalline or polycrystalline silicon. The method also involves forming a conductive paste layer on the barrier layer. The method also involves forming a conductive layer from the conductive paste layer. The method also involves forming a contact structure for the semiconductor region of the solar cell, the contact structure including at least the conductive layer.Type: ApplicationFiled: December 20, 2013Publication date: June 25, 2015Inventors: Richard Hamilton Sewell, David Aaron Randolph Barkhouse, Junbo Wu, Michael Cudzinovic, Paul Loscutoff, Joseph Behnke, Michel Arsène Olivier Ngamo Toko
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Publication number: 20140273331Abstract: A method of fabricating a solar cell is disclosed. The method includes forming a polished surface on a silicon substrate and forming a first flowable matrix in an interdigitated pattern on the polished surface, where the polished surface allows the first flowable matrix to form an interdigitated pattern comprising features of uniform thickness and width. In an embodiment, the method includes forming the silicon substrate using a method such as, but not limited to, of diamond wire or slurry wafering processes. In another embodiment, the method includes forming the polished surface on the silicon substrate using a chemical etchant such as, but not limited to, sulfuric acid (H2SO4), acetic acid (CH3COOH), nitric acid (HNO3), hydrofluoric acid (HF) or phosphoric acid (H3PO4). In still another embodiment, the etchant is an isotropic etchant. In yet another embodiment, the method includes providing a surface of the silicon substrate with at most 500 nanometer peak-to-valley roughness.Type: ApplicationFiled: March 13, 2013Publication date: September 18, 2014Inventors: Genevieve A. Solomon, Scott Harrington, Kahn Wu, Paul Loscutoff, Junbo Wu, Steven Edward Molesa
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Publication number: 20140174518Abstract: Enhanced adhesion of seed layers for solar cell conductive contacts and methods of forming solar cell conductive contacts are described. For example, a method of fabricating a solar cell includes forming an adhesion layer above an emitter region of a substrate. A metal seed paste layer is formed on the adhesion layer. The metal seed paste layer and the adhesion layer are annealed to form a conductive layer in contact with the emitter region of the substrate. A conductive contact for the solar cell is formed from the conductive layer.Type: ApplicationFiled: December 21, 2012Publication date: June 26, 2014Inventors: Junbo Wu, Michael C. Johnson, Michael Cudzinovic, Joseph Behnke, Xi Zhu, David D. Smith, Richard Sewell Hamilton, Xiuwen Tu, Seung Bum Rim
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Publication number: 20140158192Abstract: Seed layers for solar cell conductive contacts and methods of forming seed layers for solar cell conductive contacts are described. For example, a solar cell includes a substrate. An emitter region is disposed above the substrate. A conductive contact is disposed on the emitter region and includes a conductive layer in contact with the emitter region. The conductive layer is composed of aluminum/silicon (Al/Si) particles having a composition of greater than approximately 15% Si with the remainder Al. In another example, a solar cell includes a substrate having a diffusion region at or near a surface of the substrate. A conductive contact is disposed above the diffusion region and includes a conductive layer in contact with the substrate. The conductive layer is composed of aluminum/silicon (Al/Si) particles having a composition of greater than approximately 15% Si with the remainder Al.Type: ApplicationFiled: December 6, 2012Publication date: June 12, 2014Inventors: Michael Cudzinovic, Junbo Wu, Xi Zhu
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Publication number: 20130333747Abstract: A method of high reverse current burn-in of solar cells and a solar cell with a burned-in bypass diode are described herein. In one embodiment, high reverse current burn-in of a solar cell with a tunnel oxide layer induces low breakdown voltage in the solar cell. Soaking a solar cell at high current can also reduce the difference in voltage of defective and non-defective areas of the cell.Type: ApplicationFiled: September 26, 2012Publication date: December 19, 2013Inventors: Michael J. Defensor, Xiuwen Tu, Junbo Wu, David Smith