Patents by Inventor Junde Ma
Junde Ma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9731960Abstract: A semiconductor device includes a substrate structure. The substrate structure includes a protruding engagement member having an inner periphery defining a groove and an outer periphery, an oxide layer on the protruding engagement member, and a bonding material layer on the oxide layer. The semiconductor device also includes a micro-electromechanical system (MEMS) substrate having a bonging pad. The bonding pad of the MEMS substrate is bonded to the bonding material layer of the substrate structure.Type: GrantFiled: February 8, 2016Date of Patent: August 15, 2017Assignee: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Lushan Jiang, Xiaojun Chen, Xuanjie Liu, Liangliang Guo, Junde Ma
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Patent number: 9640451Abstract: A wafer processing method is provided. The method includes providing a to-be-processed wafer having a first surface with a plurality of the device regions and dicing groove regions between adjacent device regions and a second surface; and providing a capping wafer having a first surface and a second surface. The method also includes bonding the first surface of the capping wafer with the first surface of the to-be-processed wafer. Further, the method includes performing an edge trimming process onto the to-be-processed wafer to cause a radius of the to-be-processed wafer to be smaller than a radius of the capping wafer; and grinding the second surface of the capping wafer. Further, the method also includes cleaning the second surface of the capping wafer; and etching a portion of the grinded and cleaned capping wafer to expose the dicing groove regions on the first surface of the to-be-processed wafer.Type: GrantFiled: January 15, 2015Date of Patent: May 2, 2017Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATIONInventors: Chao Zheng, Wei Wang, Junde Ma
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Patent number: 9620427Abstract: A semiconductor device may include an enclosure structure. The semiconductor device may further include a getter for absorb gas molecules. The getter may be positioned (and enclosed) inside the enclosure structure and may overlap a first portion of a surface of the enclosure structure. The semiconductor device may further include an inductor. The inductor may be positioned (and enclosed) inside the enclosure structure and may overlap a second portion of the surface of the enclosure structure without overlapping the getter in a direction perpendicular to the first surface of the enclosure structure.Type: GrantFiled: April 14, 2016Date of Patent: April 11, 2017Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATIONInventors: Chao Zheng, Junde Ma, Liangliang Guo, Wei Wang
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Publication number: 20160233138Abstract: A semiconductor device may include an enclosure structure. The semiconductor device may further include a getter for absorb gas molecules. The getter may be positioned (and enclosed) inside the enclosure structure and may overlap a first portion of a surface of the enclosure structure. The semiconductor device may further include an inductor. The inductor may be positioned (and enclosed) inside the enclosure structure and may overlap a second portion of the surface of the enclosure structure without overlapping the getter in a direction perpendicular to the first surface of the enclosure structure.Type: ApplicationFiled: April 14, 2016Publication date: August 11, 2016Inventors: Chao ZHENG, Junde MA, Liangliang GUO, Wei WANG
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Publication number: 20160152467Abstract: A method for fabricating a MEMS device includes providing a substrate having a front surface and a back surface, and forming a protruding engagement member on the front surface of the substrate. The protruding engagement member has an inner periphery defining a groove and an outer periphery. The method also includes forming a first trench having a first depth along the outer periphery, forming a patterned mask layer on the protruding engagement member covering the groove and exposing a portion of the first trench. The method further includes etching the exposed portion of the first trench to form a second trench having a second depth, removing the patterned mask layer, bonding the substrate with a MEMS substrate to form the MEMS device, and thinning the back surface to within the second depth. The method prevents dust from being deposited on the MEMS substrate as in the case of cutting.Type: ApplicationFiled: February 8, 2016Publication date: June 2, 2016Inventors: LUSHAN JIANG, Xiaojun Chen, Xuanjie Liu, Liangliang Guo, Junde Ma
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Patent number: 9352957Abstract: A semiconductor device may include an enclosure structure. The semiconductor device may further include a getter for absorb gas molecules. The getter may be positioned (and enclosed) inside the enclosure structure and may overlap a first portion of a surface of the enclosure structure. The semiconductor device may further include an inductor. The inductor may be positioned (and enclosed) inside the enclosure structure and may overlap a second portion of the surface of the enclosure structure without overlapping the getter in a direction perpendicular to the first surface of the enclosure structure.Type: GrantFiled: July 27, 2015Date of Patent: May 31, 2016Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATIONInventors: Chao Zheng, Junde Ma, Liangliang Guo, Wei Wang
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Patent number: 9290378Abstract: A method for fabricating a MEMS device includes providing a substrate having a front surface and a back surface, and forming a protruding engagement member on the front surface of the substrate. The protruding engagement member has an inner periphery defining a groove and an outer periphery. The method also includes forming a first trench having a first depth along the outer periphery, forming a patterned mask layer on the protruding engagement member covering the groove and exposing a portion of the first trench. The method further includes etching the exposed portion of the first trench to form a second trench having a second depth, removing the patterned mask layer, bonding the substrate with a MEMS substrate to form the MEMS device, and thinning the back surface to within the second depth. The method prevents dust from being deposited on the MEMS substrate as in the case of cutting.Type: GrantFiled: January 8, 2015Date of Patent: March 22, 2016Assignee: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Lushan Jiang, Xiaojun Chen, Xuanjie Liu, Liangliang Guo, Junde Ma
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Publication number: 20160031706Abstract: A semiconductor device may include an enclosure structure. The semiconductor device may further include a getter for absorb gas molecules. The getter may be positioned (and enclosed) inside the enclosure structure and may overlap a first portion of a surface of the enclosure structure. The semiconductor device may further include an inductor. The inductor may be positioned (and enclosed) inside the enclosure structure and may overlap a second portion of the surface of the enclosure structure without overlapping the getter in a direction perpendicular to the first surface of the enclosure structure.Type: ApplicationFiled: July 27, 2015Publication date: February 4, 2016Inventors: Chao ZHENG, Junde MA, Liangliang GUO, Wei WANG
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Publication number: 20150380327Abstract: A wafer processing method is provided. The method includes providing a to-be-processed wafer having a first surface with a plurality of the device regions and dicing groove regions between adjacent device regions and a second surface; and providing a capping wafer having a first surface and a second surface. The method also includes bonding the first surface of the capping wafer with the first surface of the to-be-processed wafer. Further, the method includes performing an edge trimming process onto the to-be-processed wafer to cause a radius of the to-be-processed wafer to be smaller than a radius of the capping wafer; and grinding the second surface of the capping wafer. Further, the method also includes cleaning the second surface of the capping wafer; and etching a portion of the grinded and cleaned capping wafer to expose the dicing groove regions on the first surface of the to-be-processed wafer.Type: ApplicationFiled: January 15, 2015Publication date: December 31, 2015Inventors: CHAO ZHENG, WEI WANG, JUNDE MA
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Publication number: 20150298968Abstract: A method for fabricating a MEMS device includes providing a substrate having a front surface and a back surface, and forming a protruding engagement member on the front surface of the substrate. The protruding engagement member has an inner periphery defining a groove and an outer periphery. The method also includes forming a first trench having a first depth along the outer periphery, forming a patterned mask layer on the protruding engagement member covering the groove and exposing a portion of the first trench. The method further includes etching the exposed portion of the first trench to form a second trench having a second depth, removing the patterned mask layer, bonding the substrate with a MEMS substrate to form the MEMS device, and thinning the back surface to within the second depth. The method prevents dust from being deposited on the MEMS substrate as in the case of cutting.Type: ApplicationFiled: January 8, 2015Publication date: October 22, 2015Inventors: Jiang Lushan, Xiaojun Chen, Xuanjie Liu, Liangliang Guo, Junde Ma