Abstract: Provided is a method for manufacturing an optoelectronic device. The manufacturing method includes the following steps: In S1, a monolithic circuit board including multiple device units is manufactured. In S2, a chip is mounted on the first pad of the device unit, and the chip is electrically connected to the second pad so that a monolithic circuit board with the chip is obtained. In S3, the monolithic circuit board with the chip is encapsulated to obtain a monolithic optoelectronic device. In S4, the monolithic optoelectronic device is cut into individual optoelectronic devices. The method for manufacturing an optoelectronic device of the present disclosure can solve problems of substrate deformation and chips falling off and cracking during the manufacturing process of large-size and thin optoelectronic devices, thereby improving the yield rate.

Abstract: Provided are a sensing device and a manufacturing method thereof. The sensing device includes a substrate, a red light chip, an infrared light chip, and a green light chip. The red light chip, the infrared light chip, and the green light chip are disposed on the front face of the substrate. Five front face pads are disposed on the front face of the substrate. Five back face pads are disposed on the back face of the substrate. The third back face pad is connected to the fourth back face pad by a conductive line. One of the five front face pads is electrically connected to a corresponding one of the five back face pads.