Patents by Inventor Jundson Robert Holt

Jundson Robert Holt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Implant damage control by in-situ C doping during sige epitaxy for device applications
    Patent number: 8790980
    Abstract: Some example embodiments of the invention comprise methods for and semiconductor structures comprised of: a MOS transistor comprised of source/drain regions, a gate dielectric, a gate electrode, channel region; a carbon doped SiGe region that applies a stress on the channel region whereby the carbon doped SiGe region retains stress/strain on the channel region after subsequent heat processing.
    Type: Grant
    Filed: February 17, 2014
    Date of Patent: July 29, 2014
    Assignees: GLOBALFOUNDRIES Singapore Pte. Ltd.
    Inventors: Jin Ping Liu, Jundson Robert Holt