Patents by Inventor June-Hee Lim

June-Hee Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Field-effect transistor including localized halo ion regions, and semiconductor memory, memory card, and system including the same
    Patent number: 7816734
    Abstract: A field-effect transistor including localized halo ion regions that can optimize HEIP characteristics and GIDL characteristics. The field-effect transistor includes a substrate, an active region, a gate structure, and halo ion regions. The active region includes source/drain regions and a channel region formed at a partial region in the substrate. The gate structure electrically contacts the active region. The halo ion regions are locally formed adjacent to both end portions of the source/drain regions in the substrate.
    Type: Grant
    Filed: July 8, 2008
    Date of Patent: October 19, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyuck-Chai Jung, June-Hee Lim
  • FIELD-EFFECT TRANSISTOR INCLUDING LOCALIZED HALO ION REGIONS, AND SEMICONDUCTOR MEMORY, MEMORY CARD, AND SYSTEM INCLUDING THE SAME
    Publication number: 20090152647
    Abstract: A field-effect transistor including localized halo ion regions that can optimize HEIP characteristics and GIDL characteristics. The field-effect transistor includes a substrate, an active region, a gate structure, and halo ion regions. The active region includes source/drain regions and a channel region formed at a partial region in the substrate. The gate structure electrically contacts the active region. The halo ion regions are locally formed adjacent to both end portions of the source/drain regions in the substrate.
    Type: Application
    Filed: July 8, 2008
    Publication date: June 18, 2009
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyuck-Chai JUNG, June-Hee LIM