Abstract: Methods and systems for executing tracking and monitoring manufacturing data of a battery are disclosed. One method includes: receiving, by a server system, sensing data of the battery from a sensing system; generating, by the server system, mapping data based on the sensing data; generating, by the server system, identification data of the battery based on the sensing data; generating, by the server system, monitoring data of the battery based on the sensing data, the identification data, and the mapping data; and generating, by the server system, display data for displaying a simulated electrode of the battery on a graphical user interface based on the monitoring data of the battery.

Abstract: Disclosed is a triblock copolymer including two terminal blocks derived from a block copolymer and a middle block incorporated between the terminal blocks. The middle block has a higher surface energy than the terminal blocks. Also disclosed is a method for preparing the triblock copolymer. The preparation method provides a generalized approach that is highly applicable to processes for the mass production of block copolymers and can be applied to various combinations of block copolymers as well as to specific combinations of copolymers. Also disclosed is a method for nanopatterning using the triblock copolymer. The nanopatterning method enables the formation of nanopatterns with sub-10 nm feature size with simple process and reduced cost. Therefore, the nanopatterning method can be widely used in various industrial fields such as semiconductor lithography and memory devices.

Abstract: A block copolymer is provided. The block copolymer according to an exemplary embodiment includes a first block represented by Chemical Formula 1 and a second block represented by Chemical Formula 2: wherein COM1 and COM2 are independently selected from a polystyrene moiety, polymethylmethacrylate moiety, polyethylene oxide moiety, polyvinylpyridine moiety, polydimethylsiloxane moiety, polyferrocenyldimethylsilane moiety, and polyisoprene moiety, R1 is hydrogen or an alkyl group with 1 to 10 carbon atoms, Ph is a phenyl group, a is 1 to 50, R2 is hydrogen or an alkyl group with 1 to 10 carbon atoms, and b is 1 to 50.

Abstract: A method of patterning a block copolymer layer, the method including: providing a substrate with a guide pattern formed on a surface thereof; forming a block copolymer layer on the substrate with the guide pattern, the block copolymer layer including a block copolymer; and directing self-assembly of the block copolymer on the substrate according to the guide pattern to form n/2 discrete domains, wherein the guide pattern includes a block copolymer patterning area having a 90-degree bending portion, and an outer apex and an inner apex of the 90-degree bending portion are each rounded, the outer apex having a first curvature radius r1, and the inner apex having a second curvature radius r2, respectively, and the width of the patterning area W, the first curvature radius r1 and the second curvature radius r2, satisfy Inequation 1: 2 + 2 - ( 1 + 2 ) [ ( n + 2 ) 2 n ? ( n + 1 ) ] 1 3 ? r 1 - r 2 W ? 2 + 2 - ( 1 + 2 ) [ ( n - 2 ) 2 n ? ( n - 1 )

Abstract: A block copolymer is provided. The block copolymer according to an exemplary embodiment includes a first block represented by Chemical Formula 1 and a second block represented by Chemical Formula 2: wherein COM1 and COM2 are independently selected from a polystyrene moiety, polymethylmethacrylate moiety, polyethylene oxide moiety, polyvinylpyridine moiety, polydimethylsiloxane moiety, polyferrocenyldimethylsilane moiety, and polyisoprene moiety, R1 is hydrogen or an alkyl group with 1 to 10 carbon atoms, Ph is a phenyl group, a is 1 to 50, R2 is hydrogen or an alkyl group with 1 to 10 carbon atoms, and b is 1 to 50.

Abstract: A block copolymer is provided. The block copolymer according to an exemplary embodiment includes a first block represented by Chemical Formula 1 and a second block represented by Chemical Formula 2: wherein COM1 and COM2 are independently selected from a polystyrene moiety, polymethylmethacrylate moiety, polyethylene oxide moiety, polyvinylpyridine moiety, polydimethylsiloxane moiety, polyferrocenyldimethylsilane moiety, and polyisoprene moiety, R1 is hydrogen or an alkyl group with 1 to 10 carbon atoms, Ph is a phenyl group, a is 1 to 50, R2 is hydrogen or an alkyl group with 1 to 10 carbon atoms, and b is 1 to 50.

Abstract: A block copolymer is provided. The block copolymer according to an exemplary embodiment includes a first block represented by Chemical Formula 1 and a second block represented by Chemical Formula 2: wherein COM1 and COM2 are independently selected from a polystyrene moiety, polymethylmethacrylate moiety, polyethylene oxide moiety, polyvinylpyridine moiety, polydimethylsiloxane moiety, polyferrocenyldimethylsilane moiety, and polyisoprene moiety, R1 is hydrogen or an alkyl group with 1 to 10 carbon atoms, Ph is a phenyl group, a is 1 to 50, R2 is hydrogen or an alkyl group with 1 to 10 carbon atoms, and b is 1 to 50.

Abstract: A method of patterning a block copolymer layer, the method including: providing a substrate with a guide pattern formed on a surface thereof; forming a block copolymer layer on the substrate with the guide pattern, the block copolymer layer including a block copolymer; and directing self-assembly of the block copolymer on the substrate according to the guide pattern to form n/2 discrete domains, wherein the guide pattern includes a block copolymer patterning area having a 90-degree bending portion, and an outer apex and an inner apex of the 90-degree bending portion are each rounded, the outer apex having a first curvature radius r1and the inner apex having a second curvature radius r2, respectively, and the width of the patterning area W, the first curvature radius r1 and the second curvature radius r2, satisfy Inequation 1: 2 + 2 - ( 1 + 2 ) [ ( n + 2 ) 2 n ? ( n + 1 ) ] 1 3 ? r 1 - r 2 W ? 2 + 2 - ( 1 + 2 ) [ ( n - 2 ) 2 n ? ( n - 1 ) ]