Abstract: Provided are a scalable analog passive intermodulation (PIM) module, a method of controlling analog PIM, a signal processing circuit, and a sensor device. The scalable analog PIM module includes a first plural number of digital-to-analog converters (DACs), a first plural number of static random access memory (SRAM) calculators connected to the first plural number of DACs, at least one analog-to-digital converter (ADC) connected to the first plural number of SRAM calculators and configured to convert an analog convolution result signal into digital convolution data, and an analog PIM controller configured to output an enable control signal for enabling a second number, which is equal to or less than first plural number, of SRAM calculators among the first plural number of SRAM calculators to the first plural number of SRAM calculators on the basis of the convolution data output from the ADC.

Abstract: Provided are a heat dissipation molding agent having an excellent heat dissipation property and a heat dissipation film formed using the heat dissipation molding agent. In two different component-type heat dissipation molding agents, various forms of heat dissipation fillers are included in a silicone resin. The heat dissipation fillers are treated to be hydrophobic, and an anti-settling agent is introduced to the heat dissipation molding agent. Accordingly, the miscibility of the heat dissipation fillers is improved and excellent heat dissipation properties are acquired.

Abstract: Disclosed is a triblock copolymer including two terminal blocks derived from a block copolymer and a middle block incorporated between the terminal blocks. The middle block has a higher surface energy than the terminal blocks. Also disclosed is a method for preparing the triblock copolymer. The preparation method provides a generalized approach that is highly applicable to processes for the mass production of block copolymers and can be applied to various combinations of block copolymers as well as to specific combinations of copolymers. Also disclosed is a method for nanopatterning using the triblock copolymer. The nanopatterning method enables the formation of nanopatterns with sub-10 nm feature size with simple process and reduced cost. Therefore, the nanopatterning method can be widely used in various industrial fields such as semiconductor lithography and memory devices.

Abstract: A block copolymer is provided. The block copolymer according to an exemplary embodiment includes a first block represented by Chemical Formula 1 and a second block represented by Chemical Formula 2: wherein COM1 and COM2 are independently selected from a polystyrene moiety, polymethylmethacrylate moiety, polyethylene oxide moiety, polyvinylpyridine moiety, polydimethylsiloxane moiety, polyferrocenyldimethylsilane moiety, and polyisoprene moiety, R1 is hydrogen or an alkyl group with 1 to 10 carbon atoms, Ph is a phenyl group, a is 1 to 50, R2 is hydrogen or an alkyl group with 1 to 10 carbon atoms, and b is 1 to 50.

Abstract: A method of patterning a block copolymer layer, the method including: providing a substrate with a guide pattern formed on a surface thereof; forming a block copolymer layer on the substrate with the guide pattern, the block copolymer layer including a block copolymer; and directing self-assembly of the block copolymer on the substrate according to the guide pattern to form n/2 discrete domains, wherein the guide pattern includes a block copolymer patterning area having a 90-degree bending portion, and an outer apex and an inner apex of the 90-degree bending portion are each rounded, the outer apex having a first curvature radius r1, and the inner apex having a second curvature radius r2, respectively, and the width of the patterning area W, the first curvature radius r1 and the second curvature radius r2, satisfy Inequation 1: 2 + 2 - ( 1 + 2 ) [ ( n + 2 ) 2 n ? ( n + 1 ) ] 1 3 ? r 1 - r 2 W ? 2 + 2 - ( 1 + 2 ) [ ( n - 2 ) 2 n ? ( n - 1 )

Abstract: A block copolymer is provided. The block copolymer according to an exemplary embodiment includes a first block represented by Chemical Formula 1 and a second block represented by Chemical Formula 2: wherein COM1 and COM2 are independently selected from a polystyrene moiety, polymethylmethacrylate moiety, polyethylene oxide moiety, polyvinylpyridine moiety, polydimethylsiloxane moiety, polyferrocenyldimethylsilane moiety, and polyisoprene moiety, R1 is hydrogen or an alkyl group with 1 to 10 carbon atoms, Ph is a phenyl group, a is 1 to 50, R2 is hydrogen or an alkyl group with 1 to 10 carbon atoms, and b is 1 to 50.

Abstract: A block copolymer is provided. The block copolymer according to an exemplary embodiment includes a first block represented by Chemical Formula 1 and a second block represented by Chemical Formula 2: wherein COM1 and COM2 are independently selected from a polystyrene moiety, polymethylmethacrylate moiety, polyethylene oxide moiety, polyvinylpyridine moiety, polydimethylsiloxane moiety, polyferrocenyldimethylsilane moiety, and polyisoprene moiety, R1 is hydrogen or an alkyl group with 1 to 10 carbon atoms, Ph is a phenyl group, a is 1 to 50, R2 is hydrogen or an alkyl group with 1 to 10 carbon atoms, and b is 1 to 50.

Abstract: A block copolymer is provided. The block copolymer according to an exemplary embodiment includes a first block represented by Chemical Formula 1 and a second block represented by Chemical Formula 2: wherein COM1 and COM2 are independently selected from a polystyrene moiety, polymethylmethacrylate moiety, polyethylene oxide moiety, polyvinylpyridine moiety, polydimethylsiloxane moiety, polyferrocenyldimethylsilane moiety, and polyisoprene moiety, R1 is hydrogen or an alkyl group with 1 to 10 carbon atoms, Ph is a phenyl group, a is 1 to 50, R2 is hydrogen or an alkyl group with 1 to 10 carbon atoms, and b is 1 to 50.

Abstract: A method of patterning a block copolymer layer, the method including: providing a substrate with a guide pattern formed on a surface thereof; forming a block copolymer layer on the substrate with the guide pattern, the block copolymer layer including a block copolymer; and directing self-assembly of the block copolymer on the substrate according to the guide pattern to form n/2 discrete domains, wherein the guide pattern includes a block copolymer patterning area having a 90-degree bending portion, and an outer apex and an inner apex of the 90-degree bending portion are each rounded, the outer apex having a first curvature radius r1and the inner apex having a second curvature radius r2, respectively, and the width of the patterning area W, the first curvature radius r1 and the second curvature radius r2, satisfy Inequation 1: 2 + 2 - ( 1 + 2 ) [ ( n + 2 ) 2 n ? ( n + 1 ) ] 1 3 ? r 1 - r 2 W ? 2 + 2 - ( 1 + 2 ) [ ( n - 2 ) 2 n ? ( n - 1 ) ]