Patents by Inventor June-key Lee
June-key Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11398584Abstract: Disclosed is an ultraviolet light-emitting element which uses an electron emission operation. The ultraviolet light-emitting element is sealed to maintain a high degree of vacuum. A emission substrate is prepared for the electron emission and an electron emitted from the emission substrate passes through a control substrate. The electron, which has passed through the control substrate, collides with a light-emitting substrate, from which formation of a p-type semiconductor has been excluded, and thus forms ultraviolet light.Type: GrantFiled: January 30, 2019Date of Patent: July 26, 2022Inventors: June Key Lee, Joon Mo Park, Han Sung Lee, Nae Sung Lee
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Publication number: 20200395508Abstract: Disclosed is an ultraviolet light-emitting element which uses an electron emission operation. The ultraviolet light-emitting element is sealed to maintain a high degree of vacuum. A emission substrate is prepared for the electron emission and an electron emitted from the emission substrate passes through a control substrate. The electron, which has passed through the control substrate, collides with a light-emitting substrate, from which formation of a p-type semiconductor has been excluded, and thus forms ultraviolet light.Type: ApplicationFiled: January 30, 2019Publication date: December 17, 2020Inventors: June Key LEE, Joon Mo PARK, Han Sung LEE, Nae Sung LEE
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Patent number: 8859413Abstract: Example embodiments are directed to a method of growing GaN single crystals on a silicon substrate, a method of manufacturing a GaN-based light emitting device using the silicon substrate, and a GaN-based light emitting device. The method of growing the GaN single crystals may include forming a buffer layer including a TiN group material or other like material on a silicon substrate, forming a nano-pattern including silicon oxide on the buffer layer, and growing GaN single crystals on the buffer layer and the nano-pattern.Type: GrantFiled: February 29, 2008Date of Patent: October 14, 2014Assignee: Samsung Corning Precision Materials Co., Ltd.Inventors: Sung-soo Park, June-key Lee
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Patent number: 8257984Abstract: A ferroelectric capacitor and a method of manufacturing the same are provided, wherein the ferroelectric capacitor of a semiconductor device, which sequentially includes a lower electrode, a ferroelectric layer, and an upper electrode on a conductive layer connected to a transistor formed on a semiconductor substrate, includes an oxidation preventing layer between the conductive layer and the lower electrode. The oxidation preventing layer prevents the conductive layer from being oxidized during high-temperature heat treatment of the ferroelectric layer. Accordingly, the oxidation resistivity of the interfaces of the conductive layer, used as a storage node, and the lower electrode, which faces the conductive layer, increases, so a temperature at which a ferroelectric thin layer is formed can be also increased. Consequently, a ferroelectric thin layer having excellent characteristics may be obtained.Type: GrantFiled: December 29, 2005Date of Patent: September 4, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: June-key Lee, Young-soo Park
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Patent number: 7892917Abstract: A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.Type: GrantFiled: May 14, 2008Date of Patent: February 22, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Young-jin Cho, Yo-sep Min, Young-soo Park, Jung-hyun Lee, June-key Lee, Yong-kyun Lee
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Patent number: 7767502Abstract: In a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof, the thin film semiconductor device and an electronic device include a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. Durability of the thin film semiconductor device against stress due to bending of the substrate is improved by using the protective cap.Type: GrantFiled: February 5, 2007Date of Patent: August 3, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Do-young Kim, Wan-jun Park, Young-soo Park, June-key Lee, Yo-sep Min, Jang-yeon Kwon, Sun-ae Seo, Young-min Choi, Soo-doo Chae
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Patent number: 7560042Abstract: A composition for forming a ferroelectric thin film includes: a PZT sol-gel solution including at least one of: a whole or partial hydrolysate of a lead precursor and a whole or partial hydrolyzed and polycondensated product thereof; a whole or partial hydrolysate of a zirconium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a zirconium complex having at least one hydroxy ion and at least one non-hydrolyzable ligand; and a whole or partial hydrolysate of a titanium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a titanium complex having at least one hydroxyl ion and at least one non-hydrolyzable ligand; and a Bi2SiO5 sol-gel solution including at least one of: a whole or partial hydrolysate of a silicon precursor and a whole or partial hydrolyzed and polycondensated product thereof, and a resultant obtained by refluxing triphenyl bismuth as a bismuth precursor.Type: GrantFiled: June 27, 2007Date of Patent: July 14, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Yong-kyun Lee, Young-soo Park, June-key Lee
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Publication number: 20080293256Abstract: A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.Type: ApplicationFiled: May 14, 2008Publication date: November 27, 2008Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-jin Cho, Yo-sep Min, Young-soo Park, Jung-hyun Lee, June-key Lee, Yong-kyun Lee
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Publication number: 20080283821Abstract: Example embodiments are directed to a method of growing GaN single crystals on a silicon substrate, a method of manufacturing a GaN-based light emitting device using the silicon substrate, and a GaN-based light emitting device. The method of growing the GaN single crystals may include forming a buffer layer including a TiN group material or other like material on a silicon substrate, forming a nano-pattern including silicon oxide on the buffer layer, and growing GaN single crystals on the buffer layer and the nano-pattern.Type: ApplicationFiled: February 29, 2008Publication date: November 20, 2008Inventors: Sung-soo Park, June-Key Lee
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Publication number: 20080237551Abstract: A composition for forming a ferroelectric thin film includes: a PZT sol-gel solution including at least one of: a whole or partial hydrolysate of a lead precursor and a whole or partial hydrolyzed and polycondensated product thereof; a whole or partial hydrolysate of a zirconium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a zirconium complex having at least one hydroxy ion and at least one non-hydrolyzable ligand; and a whole or partial hydrolysate of a titanium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a titanium complex having at least one hydroxyl ion and at least one non-hydrolyzable ligand; and a Bi2SiO5 sol-gel solution including at least one of: a whole or partial hydrolysate of a silicon precursor and a whole or partial hydrolyzed and polycondensated product thereof, and a resultant obtained by refluxing triphenyl bismuth as a bismuth precursor.Type: ApplicationFiled: June 27, 2007Publication date: October 2, 2008Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yong-kyun Lee, Young-soo Park, June-key Lee
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Patent number: 7374994Abstract: A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.Type: GrantFiled: May 25, 2005Date of Patent: May 20, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: Young-jin Cho, Yo-sep Min, Young-soo Park, Jung-hyun Lee, June-key Lee, Yong-kyun Lee
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Publication number: 20070172999Abstract: In a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof, the thin film semiconductor device and an electronic device include a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. Durability of the thin film semiconductor device against stress due to bending of the substrate is improved by using the protective cap.Type: ApplicationFiled: February 5, 2007Publication date: July 26, 2007Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Do-young Kim, Wan-jun Park, Young-soo Park, June-key Lee, Yo-sep Min, Jang-yeon Kwon, Sun-ae Seo, Young-min Choi, Soo-doo Chae
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Patent number: 7238388Abstract: A composition for forming a ferroelectric thin film includes: a PZT sol-gel solution including at least one of: a whole or partial hydrolysate of a lead precursor and a whole or partial hydrolyzed and polycondensated product thereof; a whole or partial hydrolysate of a zirconium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a zirconium complex having at least one hydroxy ion and at least one non-hydrolyzable ligand; and a whole or partial hydrolysate of a titanium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a titanium complex having at least one hydroxyl ion and at least one non-hydrolyzable ligand; and a Bi2SiO5 sol-gel solution including at least one of: a whole or partial hydrolysate of a silicon precursor and a whole or partial hydrolyzed and polycondensated product thereof, and a resultant obtained by refluxing triphenyl bismuth as a bismuth precursor.Type: GrantFiled: November 12, 2003Date of Patent: July 3, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Yong-kyun Lee, Young-soo Park, June-key Lee
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Patent number: 7176488Abstract: In a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof, the thin film semiconductor device and an electronic device include a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. Durability of the thin film semiconductor device against stress due to bending of the substrate is improved by using the protective cap.Type: GrantFiled: December 31, 2003Date of Patent: February 13, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Do-young Kim, Wan-jun Park, Young-soo Park, June-key Lee, Yo-sep Min, Jang-yeon Kwon, Sun-ae Seo, Young-min Choi, Soo-doo Chae
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Publication number: 20060102944Abstract: A ferroelectric capacitor and a method of manufacturing the same are provided, wherein the ferroelectric capacitor of a semiconductor device, which sequentially includes a lower electrode, a ferroelectric layer, and an upper electrode on a conductive layer connected to a transistor formed on a semiconductor substrate, includes an oxidation preventing layer between the conductive layer and the lower electrode. The oxidation preventing layer prevents the conductive layer from being oxidized during high-temperature heat treatment of the ferroelectric layer. Accordingly, the oxidation resistivity of the interfaces of the conductive layer, used as a storage node, and the lower electrode, which faces the conductive layer, increases, so a temperature at which a ferroelectric thin layer is formed can be also increased. Consequently, a ferroelectric thin layer having excellent characteristics may be obtained.Type: ApplicationFiled: December 29, 2005Publication date: May 18, 2006Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: June-key Lee, Young-soo Park
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Patent number: 7013031Abstract: A fingerprint sensor for sensing a fingerprint by converting pressure applied to a piezoelectric membrane into an electrical signal is provided, wherein the fingerprint sensor having an aggregate of piezoelectric devices includes: a substrate; a lower electrode formed on the substrate; a piezoelectric membrane formed on the lower electrode; an upper electrode formed on the piezoelectric membrane; a pressuring portion formed on the upper electrode for changing a quantity of charge on the piezoelectric membrane due to pressure exerted by contact of a fingerprint; and a non-conductive layer formed on the lower electrode for supporting and exposing the pressuring portion. Thus, a fingerprint sensor having a simple structure is provided, which is able to precisely sense fingerprint information utilizing a piezoelectric phenomenon. The fingerprint sensor may be applied to systems for identifying persons' identities in public institutions and private enterprises, and in individuals' portable systems.Type: GrantFiled: May 7, 2002Date of Patent: March 14, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: Chang-jung Kim, Young-soo Park, June-key Lee
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Patent number: 7002193Abstract: A ferroelectric capacitor and a method of manufacturing the same are provided, wherein the ferroelectric capacitor of a semiconductor device, which sequentially includes a lower electrode, a ferroelectric layer, and an upper electrode on a conductive layer connected to a transistor formed on a semiconductor substrate, includes an oxidation preventing layer between the conductive layer and the lower electrode. The oxidation preventing layer prevents the conductive layer from being oxidized during high-temperature heat treatment of the ferroelectric layer. Accordingly, the oxidation resistivity of the interfaces of the conductive layer, used as a storage node, and the lower electrode, which faces the conductive layer, increases, so a temperature at which a ferroelectric thin layer is formed can be also increased. Consequently, a ferroelectric thin layer having excellent characteristics may be obtained.Type: GrantFiled: October 16, 2002Date of Patent: February 21, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: June-key Lee, Young-soo Park
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Patent number: 6992923Abstract: A single transistor type magnetic random access memory device and a method of operating and manufacturing the same, wherein the single transistor type magnetic random access memory device includes a substrate, first and second doped regions spaced apart from each other, a gate dielectric layer on a portion of the semiconductor substrate between the first and second doped regions, a magnetic tunnel junction on the gate dielectric layer, word lines on the magnetic tunnel junction extending in a first direction which is the same direction as the second doped region, bit lines connected to the first doped region in a second direction perpendicular to the first direction, and an insulating layer covering the gate dielectric layer, the magnetic tunnel junction, and the word lines. The single transistor type magnetic random access memory device has a simple circuit structure, has a prolonged lifetime and is easy to manufacture.Type: GrantFiled: April 4, 2005Date of Patent: January 31, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: Dong-wook Kim, In-kyeong Yoo, Jung-hyun Sok, June-key Lee
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Publication number: 20050272200Abstract: A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.Type: ApplicationFiled: May 25, 2005Publication date: December 8, 2005Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-jin Cho, Yo-sep Min, Young-soo Park, Jung-hyun Lee, June-key Lee, Yong-kyun Lee
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Publication number: 20050169048Abstract: A single transistor type magnetic random access memory device and a method of operating and manufacturing the same, wherein the single transistor type magnetic random access memory device includes a substrate, first and second doped regions spaced apart from each other, a gate dielectric layer on a portion of the semiconductor substrate between the first and second doped regions, a magnetic tunnel junction on the gate dielectric layer, word lines on the magnetic tunnel junction extending in a first direction which is the same direction as the second doped region, bit lines connected to the first doped region in a second direction perpendicular to the first direction, and an insulating layer covering the gate dielectric layer, the magnetic tunnel junction, and the word lines. The single transistor type magnetic random access memory device has a simple circuit structure, has a prolonged lifetime and is easy to manufacture.Type: ApplicationFiled: April 4, 2005Publication date: August 4, 2005Applicant: SAMSUNG ELECTRONICS CO., LTD.,Inventors: Dong-wook Kim, In-kyeong Yoo, Jung-hyun Sok, June-key Lee