Patents by Inventor June-key Lee

June-key Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11398584
    Abstract: Disclosed is an ultraviolet light-emitting element which uses an electron emission operation. The ultraviolet light-emitting element is sealed to maintain a high degree of vacuum. A emission substrate is prepared for the electron emission and an electron emitted from the emission substrate passes through a control substrate. The electron, which has passed through the control substrate, collides with a light-emitting substrate, from which formation of a p-type semiconductor has been excluded, and thus forms ultraviolet light.
    Type: Grant
    Filed: January 30, 2019
    Date of Patent: July 26, 2022
    Inventors: June Key Lee, Joon Mo Park, Han Sung Lee, Nae Sung Lee
  • Publication number: 20200395508
    Abstract: Disclosed is an ultraviolet light-emitting element which uses an electron emission operation. The ultraviolet light-emitting element is sealed to maintain a high degree of vacuum. A emission substrate is prepared for the electron emission and an electron emitted from the emission substrate passes through a control substrate. The electron, which has passed through the control substrate, collides with a light-emitting substrate, from which formation of a p-type semiconductor has been excluded, and thus forms ultraviolet light.
    Type: Application
    Filed: January 30, 2019
    Publication date: December 17, 2020
    Inventors: June Key LEE, Joon Mo PARK, Han Sung LEE, Nae Sung LEE
  • Patent number: 8859413
    Abstract: Example embodiments are directed to a method of growing GaN single crystals on a silicon substrate, a method of manufacturing a GaN-based light emitting device using the silicon substrate, and a GaN-based light emitting device. The method of growing the GaN single crystals may include forming a buffer layer including a TiN group material or other like material on a silicon substrate, forming a nano-pattern including silicon oxide on the buffer layer, and growing GaN single crystals on the buffer layer and the nano-pattern.
    Type: Grant
    Filed: February 29, 2008
    Date of Patent: October 14, 2014
    Assignee: Samsung Corning Precision Materials Co., Ltd.
    Inventors: Sung-soo Park, June-key Lee
  • Patent number: 8257984
    Abstract: A ferroelectric capacitor and a method of manufacturing the same are provided, wherein the ferroelectric capacitor of a semiconductor device, which sequentially includes a lower electrode, a ferroelectric layer, and an upper electrode on a conductive layer connected to a transistor formed on a semiconductor substrate, includes an oxidation preventing layer between the conductive layer and the lower electrode. The oxidation preventing layer prevents the conductive layer from being oxidized during high-temperature heat treatment of the ferroelectric layer. Accordingly, the oxidation resistivity of the interfaces of the conductive layer, used as a storage node, and the lower electrode, which faces the conductive layer, increases, so a temperature at which a ferroelectric thin layer is formed can be also increased. Consequently, a ferroelectric thin layer having excellent characteristics may be obtained.
    Type: Grant
    Filed: December 29, 2005
    Date of Patent: September 4, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: June-key Lee, Young-soo Park
  • Patent number: 7892917
    Abstract: A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.
    Type: Grant
    Filed: May 14, 2008
    Date of Patent: February 22, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-jin Cho, Yo-sep Min, Young-soo Park, Jung-hyun Lee, June-key Lee, Yong-kyun Lee
  • Patent number: 7767502
    Abstract: In a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof, the thin film semiconductor device and an electronic device include a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. Durability of the thin film semiconductor device against stress due to bending of the substrate is improved by using the protective cap.
    Type: Grant
    Filed: February 5, 2007
    Date of Patent: August 3, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Do-young Kim, Wan-jun Park, Young-soo Park, June-key Lee, Yo-sep Min, Jang-yeon Kwon, Sun-ae Seo, Young-min Choi, Soo-doo Chae
  • Patent number: 7560042
    Abstract: A composition for forming a ferroelectric thin film includes: a PZT sol-gel solution including at least one of: a whole or partial hydrolysate of a lead precursor and a whole or partial hydrolyzed and polycondensated product thereof; a whole or partial hydrolysate of a zirconium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a zirconium complex having at least one hydroxy ion and at least one non-hydrolyzable ligand; and a whole or partial hydrolysate of a titanium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a titanium complex having at least one hydroxyl ion and at least one non-hydrolyzable ligand; and a Bi2SiO5 sol-gel solution including at least one of: a whole or partial hydrolysate of a silicon precursor and a whole or partial hydrolyzed and polycondensated product thereof, and a resultant obtained by refluxing triphenyl bismuth as a bismuth precursor.
    Type: Grant
    Filed: June 27, 2007
    Date of Patent: July 14, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong-kyun Lee, Young-soo Park, June-key Lee
  • Publication number: 20080293256
    Abstract: A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.
    Type: Application
    Filed: May 14, 2008
    Publication date: November 27, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-jin Cho, Yo-sep Min, Young-soo Park, Jung-hyun Lee, June-key Lee, Yong-kyun Lee
  • Publication number: 20080283821
    Abstract: Example embodiments are directed to a method of growing GaN single crystals on a silicon substrate, a method of manufacturing a GaN-based light emitting device using the silicon substrate, and a GaN-based light emitting device. The method of growing the GaN single crystals may include forming a buffer layer including a TiN group material or other like material on a silicon substrate, forming a nano-pattern including silicon oxide on the buffer layer, and growing GaN single crystals on the buffer layer and the nano-pattern.
    Type: Application
    Filed: February 29, 2008
    Publication date: November 20, 2008
    Inventors: Sung-soo Park, June-Key Lee
  • Publication number: 20080237551
    Abstract: A composition for forming a ferroelectric thin film includes: a PZT sol-gel solution including at least one of: a whole or partial hydrolysate of a lead precursor and a whole or partial hydrolyzed and polycondensated product thereof; a whole or partial hydrolysate of a zirconium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a zirconium complex having at least one hydroxy ion and at least one non-hydrolyzable ligand; and a whole or partial hydrolysate of a titanium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a titanium complex having at least one hydroxyl ion and at least one non-hydrolyzable ligand; and a Bi2SiO5 sol-gel solution including at least one of: a whole or partial hydrolysate of a silicon precursor and a whole or partial hydrolyzed and polycondensated product thereof, and a resultant obtained by refluxing triphenyl bismuth as a bismuth precursor.
    Type: Application
    Filed: June 27, 2007
    Publication date: October 2, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yong-kyun Lee, Young-soo Park, June-key Lee
  • Patent number: 7374994
    Abstract: A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.
    Type: Grant
    Filed: May 25, 2005
    Date of Patent: May 20, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-jin Cho, Yo-sep Min, Young-soo Park, Jung-hyun Lee, June-key Lee, Yong-kyun Lee
  • Publication number: 20070172999
    Abstract: In a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof, the thin film semiconductor device and an electronic device include a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. Durability of the thin film semiconductor device against stress due to bending of the substrate is improved by using the protective cap.
    Type: Application
    Filed: February 5, 2007
    Publication date: July 26, 2007
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Do-young Kim, Wan-jun Park, Young-soo Park, June-key Lee, Yo-sep Min, Jang-yeon Kwon, Sun-ae Seo, Young-min Choi, Soo-doo Chae
  • Patent number: 7238388
    Abstract: A composition for forming a ferroelectric thin film includes: a PZT sol-gel solution including at least one of: a whole or partial hydrolysate of a lead precursor and a whole or partial hydrolyzed and polycondensated product thereof; a whole or partial hydrolysate of a zirconium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a zirconium complex having at least one hydroxy ion and at least one non-hydrolyzable ligand; and a whole or partial hydrolysate of a titanium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a titanium complex having at least one hydroxyl ion and at least one non-hydrolyzable ligand; and a Bi2SiO5 sol-gel solution including at least one of: a whole or partial hydrolysate of a silicon precursor and a whole or partial hydrolyzed and polycondensated product thereof, and a resultant obtained by refluxing triphenyl bismuth as a bismuth precursor.
    Type: Grant
    Filed: November 12, 2003
    Date of Patent: July 3, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong-kyun Lee, Young-soo Park, June-key Lee
  • Patent number: 7176488
    Abstract: In a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof, the thin film semiconductor device and an electronic device include a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. Durability of the thin film semiconductor device against stress due to bending of the substrate is improved by using the protective cap.
    Type: Grant
    Filed: December 31, 2003
    Date of Patent: February 13, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Do-young Kim, Wan-jun Park, Young-soo Park, June-key Lee, Yo-sep Min, Jang-yeon Kwon, Sun-ae Seo, Young-min Choi, Soo-doo Chae
  • Publication number: 20060102944
    Abstract: A ferroelectric capacitor and a method of manufacturing the same are provided, wherein the ferroelectric capacitor of a semiconductor device, which sequentially includes a lower electrode, a ferroelectric layer, and an upper electrode on a conductive layer connected to a transistor formed on a semiconductor substrate, includes an oxidation preventing layer between the conductive layer and the lower electrode. The oxidation preventing layer prevents the conductive layer from being oxidized during high-temperature heat treatment of the ferroelectric layer. Accordingly, the oxidation resistivity of the interfaces of the conductive layer, used as a storage node, and the lower electrode, which faces the conductive layer, increases, so a temperature at which a ferroelectric thin layer is formed can be also increased. Consequently, a ferroelectric thin layer having excellent characteristics may be obtained.
    Type: Application
    Filed: December 29, 2005
    Publication date: May 18, 2006
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: June-key Lee, Young-soo Park
  • Patent number: 7013031
    Abstract: A fingerprint sensor for sensing a fingerprint by converting pressure applied to a piezoelectric membrane into an electrical signal is provided, wherein the fingerprint sensor having an aggregate of piezoelectric devices includes: a substrate; a lower electrode formed on the substrate; a piezoelectric membrane formed on the lower electrode; an upper electrode formed on the piezoelectric membrane; a pressuring portion formed on the upper electrode for changing a quantity of charge on the piezoelectric membrane due to pressure exerted by contact of a fingerprint; and a non-conductive layer formed on the lower electrode for supporting and exposing the pressuring portion. Thus, a fingerprint sensor having a simple structure is provided, which is able to precisely sense fingerprint information utilizing a piezoelectric phenomenon. The fingerprint sensor may be applied to systems for identifying persons' identities in public institutions and private enterprises, and in individuals' portable systems.
    Type: Grant
    Filed: May 7, 2002
    Date of Patent: March 14, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang-jung Kim, Young-soo Park, June-key Lee
  • Patent number: 7002193
    Abstract: A ferroelectric capacitor and a method of manufacturing the same are provided, wherein the ferroelectric capacitor of a semiconductor device, which sequentially includes a lower electrode, a ferroelectric layer, and an upper electrode on a conductive layer connected to a transistor formed on a semiconductor substrate, includes an oxidation preventing layer between the conductive layer and the lower electrode. The oxidation preventing layer prevents the conductive layer from being oxidized during high-temperature heat treatment of the ferroelectric layer. Accordingly, the oxidation resistivity of the interfaces of the conductive layer, used as a storage node, and the lower electrode, which faces the conductive layer, increases, so a temperature at which a ferroelectric thin layer is formed can be also increased. Consequently, a ferroelectric thin layer having excellent characteristics may be obtained.
    Type: Grant
    Filed: October 16, 2002
    Date of Patent: February 21, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: June-key Lee, Young-soo Park
  • Patent number: 6992923
    Abstract: A single transistor type magnetic random access memory device and a method of operating and manufacturing the same, wherein the single transistor type magnetic random access memory device includes a substrate, first and second doped regions spaced apart from each other, a gate dielectric layer on a portion of the semiconductor substrate between the first and second doped regions, a magnetic tunnel junction on the gate dielectric layer, word lines on the magnetic tunnel junction extending in a first direction which is the same direction as the second doped region, bit lines connected to the first doped region in a second direction perpendicular to the first direction, and an insulating layer covering the gate dielectric layer, the magnetic tunnel junction, and the word lines. The single transistor type magnetic random access memory device has a simple circuit structure, has a prolonged lifetime and is easy to manufacture.
    Type: Grant
    Filed: April 4, 2005
    Date of Patent: January 31, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-wook Kim, In-kyeong Yoo, Jung-hyun Sok, June-key Lee
  • Publication number: 20050272200
    Abstract: A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.
    Type: Application
    Filed: May 25, 2005
    Publication date: December 8, 2005
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-jin Cho, Yo-sep Min, Young-soo Park, Jung-hyun Lee, June-key Lee, Yong-kyun Lee
  • Publication number: 20050169048
    Abstract: A single transistor type magnetic random access memory device and a method of operating and manufacturing the same, wherein the single transistor type magnetic random access memory device includes a substrate, first and second doped regions spaced apart from each other, a gate dielectric layer on a portion of the semiconductor substrate between the first and second doped regions, a magnetic tunnel junction on the gate dielectric layer, word lines on the magnetic tunnel junction extending in a first direction which is the same direction as the second doped region, bit lines connected to the first doped region in a second direction perpendicular to the first direction, and an insulating layer covering the gate dielectric layer, the magnetic tunnel junction, and the word lines. The single transistor type magnetic random access memory device has a simple circuit structure, has a prolonged lifetime and is easy to manufacture.
    Type: Application
    Filed: April 4, 2005
    Publication date: August 4, 2005
    Applicant: SAMSUNG ELECTRONICS CO., LTD.,
    Inventors: Dong-wook Kim, In-kyeong Yoo, Jung-hyun Sok, June-key Lee