Abstract: A pixel structure and a fabricating method thereof are provided. The method includes providing a substrate; forming a gate and a gate insulating layer on the substrate, wherein the gate insulating layer covers the gate; forming a semiconductor layer and a conductor layer over the substrate; providing a half tone mask (HTM); forming a patterned photoresist layer on the conductor layer by using the HTM; removing portions of the conductor layer and the semiconductor layer by using the patterned photoresist layer as a mask to form a source, a drain and a channel layer; removing the patterned photoresist layer; forming a patterned passivation layer over the substrate, which has a contact opening for exposing a portion of the drain; and forming a transparent pixel electrode on the substrate, which is electrically connected to the drain via the contact opening.