Patents by Inventor June-mo Koo

June-mo Koo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ferroelectric memory and ferroelectric capacitor with Ir-alloy electrode or Ru-alloy electrode and method of manufacturing same
    Publication number: 20060027847
    Abstract: A ferroelectric capacitor comprises a first electrode comprising an alloy containing a first element and a second element of the periodic table of the elements, the first element being selected from the group consisting of Ir and Ru. A ferroelectric layer is disposed on the first electrode, wherein the ferroelectric layer comprises a ferroelectric material containing the second element. A second electrode is disposed on the ferroelectric layer. The ferroelectric capacitor can be provided as part of a memory cell of a ferroelectric memory.
    Type: Application
    Filed: August 1, 2005
    Publication date: February 9, 2006
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: June-mo Koo, Young-soo Park, Sang-min Shin, Suk-pil Kim
  • Ferroelectric capacitor and ferroelectric memory with Ir-Ru alloy electrode and method of manufacturing the same
    Publication number: 20060022236
    Abstract: A ferroelectric capacitor comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer. A ferroelectric memory comprises a substrate and a plurality of memory cells arranged on the substrate. Each memory cell comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer.
    Type: Application
    Filed: November 2, 2004
    Publication date: February 2, 2006
    Applicant: Samsung Advanced Institute of Technology
    Inventors: Sang-min Shin, Suk-pil Kim, Young-soo Park, Jung-hyun Lee, June-mo Koo
  • Capacitor of a memory device and fabrication method thereof
    Publication number: 20060001070
    Abstract: A capacitor of a memory device, and a method of fabricating the same, includes a lower electrode electrically coupled to a doping region of a transistor structure, the lower electrode having a metal electrode and a metal oxide electrode, a ferroelectric layer covering and extending laterally along the lower electrode, and an upper electrode formed on the ferroelectric layer.
    Type: Application
    Filed: May 3, 2005
    Publication date: January 5, 2006
    Inventors: Young-soo Park, Jung-hyun Lee, Choong-rae Cho, June-mo Koo, Suk-pil Kim, Sang-min Shin
  • Capacitor of a semiconductor device, memory device including the same and method of munufacturing the same
    Publication number: 20050161726
    Abstract: In a capacitor, a memory device including the capacitor, and a method of manufacturing the capacitor, the capacitor includes a lower electrode comprising a single layer of one selected from the group including a noble metal alloy and an oxide thereof, a dielectric film formed on the lower electrode, and an upper electrode formed on the dielectric film.
    Type: Application
    Filed: January 26, 2005
    Publication date: July 28, 2005
    Inventors: Sang-min Shin, June-mo Koo, Suk-pil Kim, Choong-rae Cho