Patents by Inventor June Yu

June Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8766272
    Abstract: “An imaging device formed as an active pixel array combining a CMOS fabrication process and a nanowire fabrication process. The pixels in the array may include a single or multiple photogates surrounding the nanowire. The photogates control the potential profile in the nanowire, allowing accumulation of photo-generated charges in the nanowire and transfer of the charges for signal readout. Each pixel may include a readout circuit which may include a reset transistor, charge transfer switch transistor, source follower amplifier, and pixel select transistor. A nanowire is generally structured as a vertical rod on the bulk semiconductor substrate to receive light energy impinging onto the tip of the nanowire. The nanowire may be configured to function as either a photodetector or a waveguide configured to guild the light to the substrate. Light of different wavelengths can be detected using the imaging device.
    Type: Grant
    Filed: July 6, 2012
    Date of Patent: July 1, 2014
    Assignee: Zena Technologies, Inc.
    Inventors: Young-June Yu, Munib Wober
  • Patent number: 8754359
    Abstract: An embodiment relates to a device comprising a substrate having a front side and a back-side that is exposed to incoming radiation, a nanowire disposed on the substrate and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.
    Type: Grant
    Filed: June 12, 2012
    Date of Patent: June 17, 2014
    Assignee: Zena Technologies, Inc.
    Inventors: Young-June Yu, Munib Wober
  • Publication number: 20140150857
    Abstract: Described herein is a photovoltaic device operable to convert light to electricity, comprising a substrate, a first junction, a second junction and a third junction; wherein the first junction and the second junction are arranged with opposite polarity and the second junction and the third junction are arranged with opposite polarity. The photovoltaic device may further comprise a terminal directly electrically connected to anodes of the first and second junctions or to cathodes of the first and second junctions.
    Type: Application
    Filed: December 4, 2012
    Publication date: June 5, 2014
    Applicant: ZENA TECHNOLOGIES, INC.
    Inventors: Young-June YU, Munib WOBER
  • Patent number: 8735797
    Abstract: An embodiment relates to a device comprising a substrate having a front side and a back-side that is exposed to incoming radiation, a nanowire disposed on the substrate and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.
    Type: Grant
    Filed: December 8, 2009
    Date of Patent: May 27, 2014
    Assignee: Zena Technologies, Inc.
    Inventors: Young-June Yu, Munib Wober
  • Patent number: 8710488
    Abstract: A first exemplary device has a substrate, a nanowire and a doped epitaxial layer surrounding the nanowire. The nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength. The first exemplary device may further have an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. A second exemplary device has a substrate, a nanowire and one or more photogates surrounding the nanowire. The nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength. The second exemplary device may have an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. The one or more photogates comprise an epitaxial layer.
    Type: Grant
    Filed: August 26, 2013
    Date of Patent: April 29, 2014
    Assignee: Zena Technologies, Inc.
    Inventors: Young-June Yu, Munib Wober
  • Publication number: 20140054661
    Abstract: An embodiment relates to a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.
    Type: Application
    Filed: October 31, 2013
    Publication date: February 27, 2014
    Applicant: Zena Technologies, Inc.
    Inventors: Young-June YU, Munib WOBER
  • Publication number: 20140007928
    Abstract: Described herein is a photovoltaic device operable to convert light to electricity, comprising a substrate, one or more structures essentially perpendicular to the substrate, and a reflective layer disposed on the substrate, and one or more junctions conformally disposed on the one or more structures.
    Type: Application
    Filed: July 6, 2012
    Publication date: January 9, 2014
    Applicant: ZENA TECHNOLOGIES, INC.
    Inventors: Young-June YU, Munib Wober
  • Publication number: 20130341749
    Abstract: An embodiment relates to a device comprising a substrate, a nanowire and a doped epitaxial layer surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. Another embodiment relates to a device comprising a substrate, a nanowire and one or more photogates surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire, and wherein the one or more photogates comprise an epitaxial layer.
    Type: Application
    Filed: August 26, 2013
    Publication date: December 26, 2013
    Applicant: ZENA TECHNOLOGIES, INC.
    Inventors: Young-June YU, Munib WOBER
  • Patent number: 8519379
    Abstract: An embodiment relates to a device comprising a substrate, a nanowire and a doped epitaxial layer surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. Another embodiment relates to a device comprising a substrate, a nanowire and one or more photogates surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire, and wherein the one or more photogates comprise an epitaxial layer.
    Type: Grant
    Filed: December 8, 2009
    Date of Patent: August 27, 2013
    Assignee: Zena Technologies, Inc.
    Inventors: Young-June Yu, Munib Wober
  • Patent number: 8507840
    Abstract: An image sensor and methods of use the image sensor, methods of manufacturing the image sensor, and apparatuses comprising the image sensor are disclosed. The image sensor has pixels includes at least one nanopillar with a gate electrode surrounding the at least one nanopillar, wherein the at least one nanopillar is adapted to convert light impinging thereon to electrical signals and the gate electrode is operable to pinch off or allow current flow through the at least one nanopillar. The image sensor can have a plurality of pixels arranged in an individually addressable fashion. The at least one nanopillar has a cladding. A refractive index of the cladding being smaller than a refractive index of the nanopillar.
    Type: Grant
    Filed: December 21, 2010
    Date of Patent: August 13, 2013
    Assignee: Zena Technologies, Inc.
    Inventors: Young-June Yu, Peter Duane, Munib Wober
  • Publication number: 20130112256
    Abstract: A photovoltaic device operable to convert light to electricity, comprising a substrate, one or more structures essentially perpendicular to the substrate, and a wavelength-selective layer disposed on the substrate, wherein the structures comprise a crystalline semiconductor material.
    Type: Application
    Filed: November 3, 2011
    Publication date: May 9, 2013
    Inventors: Young-June YU, Munib WOBER
  • Patent number: 8384007
    Abstract: An imaging device including a plurality of photo-sensitive elements suitable for imaging small objects less than 500 nm in size. Each of the photo-sentive elements forms a passive pixel which comprises at least one nanowire structured photodetector and a switch transistor. The nanowire structured photodetector is configured to receive the photons and store the photo generated charges and behave as a waveguide. The switch transistor is formed either in the substrate or at the same body of the nanowire and is configured to allow photo-genereated charges in the nanowire to accumulate when off and to drain from the nanowire when on. The pixel array is configured to allow high resolution imaging by arranging in a penny round pattern.
    Type: Grant
    Filed: October 7, 2009
    Date of Patent: February 26, 2013
    Assignee: Zena Technologies, Inc.
    Inventors: Young-June Yu, Munib Wober
  • Publication number: 20130009040
    Abstract: “An imaging device formed as an active pixel array combining a CMOS fabrication process and a nanowire fabrication process. The pixels in the array may include a single or multiple photogates surrounding the nanowire. The photogates control the potential profile in the nanowire, allowing accumulation of photo-generated charges in the nanowire and transfer of the charges for signal readout. Each pixel may include a readout circuit which may include a reset transistor, charge transfer switch transistor, source follower amplifier, and pixel select transistor. A nanowire is generally structured as a vertical rod on the bulk semiconductor substrate to receive light energy impinging onto the tip of the nanowire. The nanowire may be configured to function as either a photodetector or a waveguide configured to guild the light to the substrate. Light of different wavelengths can be detected using the imaging device.
    Type: Application
    Filed: July 6, 2012
    Publication date: January 10, 2013
    Applicant: ZENA TECHNOLOGIES, INC.
    Inventors: Young-June YU, Munib Wober
  • Publication number: 20120298843
    Abstract: An embodiment relates to a device comprising a substrate having a front side and a back-side that is exposed to incoming radiation, a nanowire disposed on the substrate and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.
    Type: Application
    Filed: June 12, 2012
    Publication date: November 29, 2012
    Applicant: ZENA TECHNOLOGIES, INC.
    Inventors: Young-June YU, Munib WOBER
  • Patent number: 8299472
    Abstract: An imaging device formed as an active pixel array combining a CMOS fabrication process and a nanowire fabrication process. The pixels in the array may include a single or multiple photogates surrounding the nanowire. The photogates control the potential profile in the nanowire, allowing accumulation of photo-generated charges in the nanowire and transfer of the charges for signal readout. Each pixel may also include a readout circuit which may include a reset transistor, a charge transfer switch transistor, source follower amplifier, and pixel select transistor. A nanowire is generally structured as a vertical rod on the bulk semiconductor substrate to receive the light energy impinging onto the tip of the nanowire. The nanowire may be configured to function as either a photodetector or a waveguide configured to guild the light beam to the bulk substrate. In the embodiments herein, with the presence of the nanowire photogate and a substrate photogate, light of different wavelengths can be detected.
    Type: Grant
    Filed: December 8, 2009
    Date of Patent: October 30, 2012
    Inventors: Young-June Yu, Munib Wober
  • Publication number: 20120255603
    Abstract: One device structure includes a substrate on which a surface having alternating concave and convex sections is formed, the surface having alternating concave and convex sections having a number of peaks valleys, a number of electrode/reflector components, each one of the number of electrode/reflector components being conformal to at least a portion of a section of the surface having alternating concave and convex sections from one valley to another valley, a number of p-doped layer, each p-doped layer disposed over at least a portion of an alternate one of the number of electrode/reflector components, a number of n-doped layers, each n-doped layer disposed over at least a portion of other alternate ones of the number of electrode/reflector components. Methods for fabricating are disclosed.
    Type: Application
    Filed: April 8, 2011
    Publication date: October 11, 2012
    Inventors: Young-June Yu, Munib Wober
  • Publication number: 20120168613
    Abstract: A photovoltaic device operable to convert light to electricity, comprising a substrate, a plurality of structures essentially perpendicular to the substrate, one or more recesses between the structures, each recess having a planar mirror on a bottom wall thereof and each recess filled with a transparent material. The structures have p-n or p-i-n junctions for converting light into electricity. The planar mirrors function as an electrode and can reflect light incident thereon back to the structures to be converted into electricity.
    Type: Application
    Filed: December 30, 2010
    Publication date: July 5, 2012
    Applicant: ZENA TECHNOLOGIES, INC.
    Inventors: Young-June YU, Munib Wober, Peter Duane
  • Publication number: 20120153124
    Abstract: An image sensor and methods of use the image sensor, methods of manufacturing the image sensor, and apparatuses comprising the image sensor are disclosed. The image sensor has pixels includes at least one nanopillar with a gate electrode surrounding the at least one nanopillar, wherein the at least one nanopillar is adapted to convert light impinging thereon to electrical signals and the gate electrode is operable to pinch off or allow current flow through the at least one nanopillar. The image sensor can have a plurality of pixels arranged in an individually addressable fashion. The at least one nanopillar has a cladding. A refractive index of the cladding being smaller than a refractive index of the nanopillar.
    Type: Application
    Filed: December 21, 2010
    Publication date: June 21, 2012
    Applicant: ZENA TECHNOLOGIES, INC.
    Inventors: Young-June YU, Peter Duane, Munib Wober
  • Publication number: 20120001284
    Abstract: Various embodiments for etching of silicon nitride (SixNy) lightpipes, waveguides and pillars, fabricating photodiode elements, and integration of the silicon nitride elements with photodiode elements are described. The results show that the quantum efficiency of the photodetectors (PDs) can be increased using vertical silicon nitride vertical waveguides.
    Type: Application
    Filed: December 13, 2010
    Publication date: January 5, 2012
    Applicants: PRESIDENT AND FELLOWS OF HARVARD COLLEGE, ZENA TECHNOLOGIES, INC.
    Inventors: Turgut TUT, Peter Duane, Young-June Yu, Winnie N. Ye, Munib Wober, Kenneth B. Crozier
  • Publication number: 20110315988
    Abstract: Described herein is a device comprising: a substrate; one or more of a nanostructure extending essentially perpendicularly from the substrate; wherein the nanostructure comprises a core of a doped semiconductor, an first layer disposed on the core, and a second layer of an opposite type from the core and disposed on the first layer.
    Type: Application
    Filed: May 12, 2011
    Publication date: December 29, 2011
    Applicant: ZENA TECHNOLOGIES, INC.
    Inventors: Young-June Yu, Munib Wober