Abstract: An apparatus of processing a substrate, the apparatus including: a substrate supporting unit configured to support the substrate; a control assembly disposed along an outer edge of the substrate supporting unit, the control assembly including a plurality of blades, wherein the plurality of blades are configured to combine and form a control ring that surrounds the outer edge of the substrate supporting unit; and a plasma generating unit disposed to face the substrate supporting unit, wherein the control ring has an inner diameter that is changeable during an operation of the plasma generating unit.

Abstract: A plasma processing device includes an electrostatic chuck supporting a substrate in a chamber space; an upper electrode located in an upper portion of a chamber body; a magnetic field control device including at least one coil located above the upper electrode and forming a magnetic field in the chamber space; and a control unit controlling at least one current flowing through the at least one coil such that a magnetic flux density at a target position on a boundary of the sheath region has a value in which an electronic rotation period at the target position due to the magnetic field matches an electronic oscillation period determined by at least one of a first high-frequency power source and a second high-frequency power source.

Abstract: Embodiments include a manufacturing apparatus of a semiconductor device. The manufacturing apparatus may include a wafer-type magnetic sensor and a calibrator. The wafer-type magnetic sensor may include a wafer body portion and a measuring sensor at or in the wafer body portion. The calibrator may be configured to perform an offset calibration of the measuring sensor.

Abstract: Disclosed is a magnetic field sensor device that measures a magnetic field, the magnetic field sensor device including a sensor unit that senses the magnetic field and generates sensing data, and a processing unit that generates magnetic field data based on the sensing data, wherein the sensor unit includes a sensor substrate, a center sensor positioned on a center of the sensor substrate on the sensor substrate, reference axis sensors arranged on the sensor substrate along a straight line passing through the center of the sensor substrate, and first circumference sensors arranged on the sensor substrate from the center along a circumference having a first radius, and the center sensor, the reference axis sensors, and the first circumference sensors measure magnetic field passing through the center sensor, the reference axis sensors, and the first circumference sensors, respectively.

Abstract: The present disclosure provides plasma etching apparatuses and operating methods of the plasma etching apparatuses. In some embodiments, a plasma etching apparatus includes a processing chamber, a plasma source generator, a bias generator, and an acoustic wave generator. The processing chamber is configured to receive etching gas, and to etch a wafer using plasma that has been formed according to a plasma source pulse and a bias pulse. The a plasma source generator is configured to generate the plasma source pulse. The bias generator is configured to generate the bias pulse. The acoustic wave generator is configured to generate an acoustic wave having a wavefront with a first direction parallel to the wafer and to control a density of a reactive gas of the plasma.