Patents by Inventor June Whan Choi
June Whan Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240355838Abstract: A display device includes a pixel including a first transistor, and a driving circuit including a second transistor. The first transistor includes a first active layer including first source and drain regions apart from each other with a first channel region therebetween, a first gate insulating layer on the first active layer and covering the first channel, source and drain regions, and a first gate electrode on the first gate insulating layer and overlapping the first channel region. The second transistor includes a second active layer including second source and drain regions apart from each other with a second channel region therebetween, a second gate insulating layer on a part of the second active layer including the second channel region and exposing the second source and drain regions, and a second gate electrode disposed on the second gate insulating layer and overlapping the second channel region.Type: ApplicationFiled: December 13, 2023Publication date: October 24, 2024Inventors: Hyeon Woo SHIN, June Whan CHOI
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Patent number: 12113058Abstract: A display device includes a substrate including a display area and a non-display area; a semiconductor layer including a source area, a channel area, and a drain area and disposed in the non-display area of the substrate; a gate electrode overlapping the channel area of the semiconductor layer; a gate insulating layer disposed between the gate electrode and the channel area of the semiconductor layer; a source electrode electrically connected to the source area of the semiconductor layer; and a drain electrode electrically connected to the drain area of the semiconductor layer, wherein a lateral side of the gate electrode overlaps the drain electrode.Type: GrantFiled: March 29, 2021Date of Patent: October 8, 2024Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Kang Moon Jo, An Su Lee, June Whan Choi
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Patent number: 11961849Abstract: A display device includes a base layer; a first pattern disposed on the base layer; an insulating layer disposed on the first pattern and including layers; and a second pattern disposed on the insulating layer. At least two of the layers of the insulating layer include a same material.Type: GrantFiled: June 8, 2021Date of Patent: April 16, 2024Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Keum Hee Lee, Dong Hoon Shin, June Whan Choi, Seung Sok Son, Woo Geun Lee
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Patent number: 11948510Abstract: A pixel circuit includes a first driving transistor including a gate electrode connected to a first node, a first electrode to receive a first power voltage, and a second electrode connected to a second node, a second driving transistor including a gate electrode and a second electrode connected to the second node, a first electrode to receive the first power voltage, and a back gate electrode connected to the first node, a write transistor including a first electrode to receive a data voltage and a second electrode connected to the first node, an initialization transistor including a gate electrode to receive an initialization gate signal, a first electrode to receive an initialization voltage, and a second electrode connected to the second node, a storage capacitor connected to the first and second nodes, and a light emitting element connected to the second node and configured to receive a second power voltage.Type: GrantFiled: December 12, 2022Date of Patent: April 2, 2024Assignee: Samsung Display Co., Ltd.Inventors: Soojung Chae, Seokhwan Bang, Seokje Seong, Jinseok Oh, Woobin Lee, June Whan Choi
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Patent number: 11943976Abstract: A display device includes a substrate, a first conductive layer on the substrate, the first conductive layer including a data signal line, a first insulating layer on the first conductive layer, a semiconductor layer on the first insulating layer, the semiconductor layer including a first semiconductor pattern, a second insulating layer on the semiconductor layer, and a second conductive layer on the second insulating layer, the second conductive layer including a gate electrode disposed to overlap the first semiconductor pattern, a transistor first electrode disposed to overlap a part of the first semiconductor pattern, wherein the transistor first electrode is electrically connected to the data signal line through a contact hole that penetrates the first and second insulating layers, and a transistor second electrode disposed to overlap another part of the first semiconductor pattern.Type: GrantFiled: June 4, 2020Date of Patent: March 26, 2024Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Seung Sok Son, Woo Geun Lee, Seul Ki Kim, Kap Soo Yoon, Hyun Woong Baek, Jae Hyun Lee, Su Jung Jung, Jung Kyoung Cho, Seung Ha Choi, June Whan Choi
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Publication number: 20230402007Abstract: A pixel circuit includes a first driving transistor including a gate electrode connected to a first node, a first electrode to receive a first power voltage, and a second electrode connected to a second node, a second driving transistor including a gate electrode and a second electrode connected to the second node, a first electrode to receive the first power voltage, and a back gate electrode connected to the first node, a write transistor including a first electrode to receive a data voltage and a second electrode connected to the first node, an initialization transistor including a gate electrode to receive an initialization gate signal, a first electrode to receive an initialization voltage, and a second electrode connected to the second node, a storage capacitor connected to the first and second nodes, and a light emitting element connected to the second node and configured to receive a second power voltage.Type: ApplicationFiled: December 12, 2022Publication date: December 14, 2023Inventors: SOOJUNG CHAE, SEOKHWAN BANG, SEOKJE SEONG, JINSEOK OH, Woobin Lee, JUNE WHAN CHOI
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Patent number: 11825712Abstract: An organic light emitting diode display includes a substrate including a display area and a pad area, a first thin film transistor disposed on the display area, an organic light emitting diode connected to the first thin film transistor, a pad electrode disposed on the pad area and a pad contact electrode disposed on an upper portion of the pad electrode and electrically connected to the pad electrode. The organic light emitting diode includes an anode, an organic emission layer, and a cathode. The anode includes a lower layer, an intermediate layer, and an upper layer. The pad contact electrode is formed of a material of the lower layer of the anode.Type: GrantFiled: August 26, 2021Date of Patent: November 21, 2023Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Kap Soo Yoon, Chan Woo Yang, June Whan Choi
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Publication number: 20220102390Abstract: A display device includes a base layer; a first pattern disposed on the base layer; an insulating layer disposed on the first pattern and including layers; and a second pattern disposed on the insulating layer. At least two of the layers of the insulating layer include a same material.Type: ApplicationFiled: June 8, 2021Publication date: March 31, 2022Applicant: Samsung Display Co., LTD.Inventors: Keum Hee LEE, Dong Hoon SHIN, June Whan CHOI, Seung Sok SON, Woo Geun LEE
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Publication number: 20210391409Abstract: An organic light emitting diode display includes a substrate including a display area and a pad area, a first thin film transistor disposed on the display area, an organic light emitting diode connected to the first thin film transistor, a pad electrode disposed on the pad area and a pad contact electrode disposed on an upper portion of the pad electrode and electrically connected to the pad electrode. The organic light emitting diode includes an anode, an organic emission layer, and a cathode. The anode includes a lower layer, an intermediate layer, and an upper layer. The pad contact electrode is formed of a material of the lower layer of the anode.Type: ApplicationFiled: August 26, 2021Publication date: December 16, 2021Inventors: KAP SOO YOON, CHAN WOO YANG, JUNE WHAN CHOI
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Publication number: 20210327868Abstract: A display device includes a substrate including a display area and a non-display area; a semiconductor layer including a source area, a channel area, and a drain area and disposed in the non-display area of the substrate; a gate electrode overlapping the channel area of the semiconductor layer; a gate insulating layer disposed between the gate electrode and the channel area of the semiconductor layer; a source electrode electrically connected to the source area of the semiconductor layer; and a drain electrode electrically connected to the drain area of the semiconductor layer, wherein a lateral side of the gate electrode overlaps the drain electrode.Type: ApplicationFiled: March 29, 2021Publication date: October 21, 2021Applicant: Samsung Display Co., LTD.Inventors: Kang Moon JO, An Su LEE, June Whan CHOI
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Patent number: 11133370Abstract: An organic light emitting diode display includes a substrate including a display area and a pad area, a first thin film transistor disposed on the display area, an organic light emitting diode connected to the first thin film transistor, a pad electrode disposed on the pad area and a pad contact electrode disposed on an upper portion of the pad electrode and electrically connected to the pad electrode. The organic light emitting diode includes an anode, an organic emission layer, and a cathode. The anode includes a lower layer, an intermediate layer, and an upper layer. The pad contact electrode is formed of a material of the lower layer of the anode.Type: GrantFiled: January 14, 2020Date of Patent: September 28, 2021Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Kap Soo Yoon, Chan Woo Yang, June Whan Choi
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Publication number: 20210091163Abstract: A display device includes a substrate, a first conductive layer on the substrate, the first conductive layer including a data signal line, a first insulating layer on the first conductive layer, a semiconductor layer on the first insulating layer, the semiconductor layer including a first semiconductor pattern, a second insulating layer on the semiconductor layer, and a second conductive layer on the second insulating layer, the second conductive layer including a gate electrode disposed to overlap the first semiconductor pattern, a transistor first electrode disposed to overlap a part of the first semiconductor pattern, wherein the transistor first electrode is electrically connected to the data signal line through a contact hole that penetrates the first and second insulating layers, and a transistor second electrode disposed to overlap another part of the first semiconductor pattern.Type: ApplicationFiled: June 4, 2020Publication date: March 25, 2021Applicant: Samsung Display Co., LTD.Inventors: Seung Sok SON, Woo Geun LEE, Seul Ki KIM, Kap Soo YOON, Hyun Woong BAEK, Jae Hyun LEE, Su Jung JUNG, Jung Kyoung CHO, Seung Ha CHOI, June Whan CHOI
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Publication number: 20200227509Abstract: An organic light emitting diode display includes a substrate including a display area and a pad area, a first thin film transistor disposed on the display area, an organic light emitting diode connected to the first thin film transistor, a pad electrode disposed on the pad area and a pad contact electrode disposed on an upper portion of the pad electrode and electrically connected to the pad electrode. The organic light emitting diode includes an anode, an organic emission layer, and a cathode. The anode includes a lower layer, an intermediate layer, and an upper layer. The pad contact electrode is formed of a material of the lower layer of the anode.Type: ApplicationFiled: January 14, 2020Publication date: July 16, 2020Inventors: KAP SOO YOON, CHAN WOO YANG, JUNE WHAN CHOI
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Patent number: 10032803Abstract: A thin film transistor array panel is provided as follows. A gate electrode is disposed on a substrate. A semiconductor layer is disposed on the gate electrode. A gate insulating layer is disposed between the gate electrode and the semiconductor layer. A source electrode is disposed on a first side of the semiconductor layer, having a first lateral surface. A drain electrode is disposed on a second side of the semiconductor layer, having a second lateral surface. The first and second lateral surfaces define a spacing which overlaps the gate electrode. A metal suicide layer is disposed on the first and second lateral surfaces. A passivation layer is disposed on the metal silicide layer, the source electrode and the drain electrode. The passivation layer is not in contact with the first and second lateral surfaces.Type: GrantFiled: November 4, 2016Date of Patent: July 24, 2018Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Zhu Xun, Jae Woo Park, Jae Won Song, Keum Hee Lee, June Whan Choi
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Publication number: 20170053940Abstract: A thin film transistor array panel is provided as follows. A gate electrode is disposed on a substrate. A semiconductor layer is disposed on the gate electrode. A gate insulating layer is disposed between the gate electrode and the semiconductor layer. A source electrode is disposed on a first side of the semiconductor layer, having a first lateral surface. A drain electrode is disposed on a second side of the semiconductor layer, having a second lateral surface. The first and second lateral surfaces define a spacing which overlaps the gate electrode. A metal suicide layer is disposed on the first and second lateral surfaces. A passivation layer is disposed on the metal silicide layer, the source electrode and the drain electrode. The passivation layer is not in contact with the first and second lateral surfaces.Type: ApplicationFiled: November 4, 2016Publication date: February 23, 2017Inventors: ZHU XUN, JAE WOO PARK, JAE WON SONG, KEUM HEE LEE, JUNE WHAN CHOI
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Patent number: 9515093Abstract: A thin film transistor array panel is provided as follows. A gate electrode is disposed on a substrate. A semiconductor layer is disposed on the gate electrode. A gate insulating layer is disposed between the gate electrode and the semiconductor layer. A source electrode is disposed on a first side of the semiconductor layer, having a first lateral surface. A drain electrode is disposed on a second side of the semiconductor layer, having a second lateral surface. The first and second lateral surfaces define a spacing which overlaps the gate electrode. A metal silicide layer is disposed on the first and second lateral surfaces. A passivation layer is disposed on the metal silicide layer, the source electrode and the drain electrode. The passivation layer is not in contact with the first and second lateral surfaces.Type: GrantFiled: August 22, 2014Date of Patent: December 6, 2016Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Zhu Xun, Jae Woo Park, Jae Won Song, Keum Hee Lee, June Whan Choi
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Publication number: 20160322507Abstract: A thin film transistor array panel, including a substrate; a gate electrode on the substrate; a semiconductor layer on the substrate; a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer including a first oxide insulating layer in contact with the semiconductor layer; a source electrode on the semiconductor layer; a drain electrode facing the source electrode; and a passivation layer covering the source electrode and the drain electrode, the passivation layer including a second oxide insulating layer in contact with the source electrode and the drain electrode, at least one of the first oxide insulating layer and the second oxide insulating layer having a varying hydrogen content distribution in a thickness direction.Type: ApplicationFiled: April 25, 2016Publication date: November 3, 2016Inventors: June Whan CHOI, Jun Hyuck JEON, Seung-Kyeng CHO, Jang Soo KIM, Jae Woo PARK, Ki Seong SEO, Soo Woong LEE, Jeong Young LEE
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Patent number: 9406785Abstract: A thin film transistor includes a substrate, an oxide semiconductor layer that is disposed on the substrate, a gate electrode that overlaps with the oxide semiconductor layer, a gate insulating layer that is disposed between the oxide semiconductor layer and the gate electrode, and a source electrode and a drain electrode that at least partially overlap with the oxide semiconductor layer and are spaced from each other. The gate insulating layer includes an oxide including a first material. The oxide semiconductor layer includes an oxide which includes a same material as the first material and a second material, and the source electrode and the drain electrode include an oxide that includes a same material as the second material and a third material, and a grain boundary is not formed on an interface between at least one of the gate insulating layer and the oxide semiconductor layer or between the oxide semiconductor layer, and the source electrode and the drain electrode.Type: GrantFiled: October 22, 2014Date of Patent: August 2, 2016Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Doo Hyoung Lee, Bo Sung Kim, Chan Woo Yang, Seung-Ho Jung, Yeon Taek Jeong, June Whan Choi, Tae-Young Choi
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Patent number: 9136342Abstract: A thin film transistor is provided. A thin film transistor according to an exemplary embodiment of the present invention includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a semiconductor layer disposed on the substrate and including at least a portion overlapping the gate electrode; a gate insulating layer disposed between the gate line and the semiconductor layer; and a source electrode and a drain electrode disposed on the substrate and facing each other over a channel region of the semiconductor layer. The gate insulating layer includes a first region and a second region, the first region corresponds to the channel region of the semiconductor layer, the first region is made of a first material, the second region is made of a second material, and the first material and the second material have different atomic number ratios of carbon and silicon.Type: GrantFiled: September 24, 2014Date of Patent: September 15, 2015Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Yeon Taek Jeong, Bo Sung Kim, Doo-Hyoung Lee, June Whan Choi, Tae-Young Choi, Kano Masataka
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Publication number: 20150200212Abstract: A thin film transistor array panel is provided as follows. A gate electrode is disposed on a substrate. A semiconductor layer is disposed on the gate electrode. A gate insulating layer is disposed between the gate electrode and the semiconductor layer. A source electrode is disposed on a first side of the semiconductor layer, having a first lateral surface. A drain electrode is disposed on a second side of the semiconductor layer, having a second lateral surface. The first and second lateral surfaces define a spacing which overlaps the gate electrode. A metal silicide layer is disposed on the first and second lateral surfaces. A passivation layer is disposed on the metal silicide layer, the source electrode and the drain electrode. The passivation layer is not in contact with the first and second lateral surfaces.Type: ApplicationFiled: August 22, 2014Publication date: July 16, 2015Inventors: Zhu XUN, Jae Woo PARK, Jae Won SONG, Keum Hee LEE, June Whan CHOI