Abstract: A method of preparing a positive electrode active material having a high ratio of charge and discharge capacity at a charge end voltage of 4.1 V to 4.175 V to charge and discharge capacity at a charge end voltage of 4.2 V to 4.275 V and having an excellent initial charge and discharge capacity is provided.

Abstract: A display includes: a display panel; and a panel bottom sheet disposed below the display panel, the panel bottom sheet including: a first heat dissipation layer; a second heat dissipation layer over the first heat dissipation layer, including a first opening formed completely through the second heat dissipation layer in a thickness direction; a heat dissipation coupling interlayer between the first heat dissipation layer and the second heat dissipation layer, and a heat dissipation substrate on the second heat dissipation layer.

Abstract: A driving circuit includes a first transistor, a capacitor, a second transistor, and a driving transistor. The first transistor is configured to provide a data signal according to a first scan signal. The capacitor is coupled to the first transistor, and the capacitor includes a first terminal and a second terminal. The second transistor is coupled to the first transistor, and the second transistor is configured to provide a start signal according to the data signal. The driving transistor is coupled to the second transistor, and the driving transistor is configured to output a driving signal according to the start signal.

Abstract: A pixel array is provided. The pixel array includes a plurality of pixels, wherein each of the pixels includes a light emitting diode, a first transistor, a second transistor, a third transistor, a fourth transistor, and a fifth transistor. The first transistor receives a first data signal and a first scan signal. The second transistor is coupled to the first transistor and an anode of the light emitting diode. The third transistor receives a system high voltage and a first control signal, and is coupled to the second transistor. The fourth transistor is coupled to an anode of a light emitting diode of an adjacent pixel, a control terminal of the third transistor, and a cathode of the light emitting diode. The fifth transistor is coupled to the cathode of the light emitting diode, and receives a second control signal and a system low voltage.

Abstract: A display detection device includes a panel, a detection board, and a detection adapter board. The panel is configured to display. The detection board is coupled to the panel, and is configured to input a detection signal. The detection adapter board is coupled to the panel, and is configured to respond to the detection signal to generate a detection result.

Abstract: A driving circuit includes a first transistor, a capacitor, a second transistor, and a driving transistor. The first transistor is configured to provide a data signal according to a first scan signal. The capacitor is coupled to the first transistor, and the capacitor includes a first terminal and a second terminal. The second transistor is coupled to the first transistor, and the second transistor is configured to provide a start signal according to the data signal. The driving transistor is coupled to the second transistor, and the driving transistor is configured to output a driving signal according to the start signal.

Abstract: A display device and a driving method thereof are provided. The display device includes a display panel, a controller, and a driver. The display panel includes a plurality of light-emitting elements. The controller receives characteristic information of the light-emitting elements, and obtains a first relationship curve between current density information and luminous efficiency information according to the characteristic information. The controller obtains a second relationship curve between duty cycle information and accumulated current consumption information or accumulated power consumption information according to the first relationship curve. The controller finds a selected duty cycle corresponding to a maximum luminous efficiency according to the second relationship curve. The driver activates the light-emitting elements according to the selected duty cycle.

Abstract: A display panel includes a pixel array substrate, a plurality of vertical light emitting devices and a flip-chip light emitting device. The pixel array substrate has a first pixel area and a second pixel area. The vertical light emitting devices are disposed in the first pixel area and the second pixel area and electrically connected to the pixel array substrate. The flip-chip light emitting device is disposed in the second pixel area and electrically connected to the pixel array substrate. A color of an emitted light beam of the flip-chip light emitting device and a color of an emitted light beam of one of the vertical light emitting devices located in the first pixel area are identical.

Abstract: A display device includes a base substrate, an organic layer on the base substrate and including a pattern region having an uneven pattern formed thereon, and a non-pattern region having a substantially flat surface, a light-emitting element on the organic layer, and a color conversion pattern on the light-emitting element and overlapping the pattern region and the non-pattern region.

Abstract: A pixel array is provided. The pixel array includes a plurality of red pixels, a plurality of green pixels, and a plurality of blue pixels. Each green pixel includes a light emitting diode (LED), a first transistor, a second transistor, a third transistor, and a fourth transistor. The LED receives a system low voltage. The first transistor receives a first data signal and a first scan signal. The second transistor is coupled to a second end of the first transistor and the anode of the light emitting diode. The third transistor receives a system high voltage and a first control signal, and is coupled to a first end of the second transistor. The fourth transistor is coupled to the anode of the light-emitting diode of an adjacent green pixel, a control terminal of the third transistor, and the anode of the light-emitting diode.

Abstract: A pixel array is provided. The pixel array includes a plurality of red pixels, a plurality of green pixels, and a plurality of blue pixels. Each green pixel includes a light emitting diode (LED), a first transistor, a second transistor, a third transistor, and a fourth transistor. The LED receives a system low voltage. The first transistor receives a first data signal and a first scan signal. The second transistor is coupled to a second end of the first transistor and the anode of the light emitting diode. The third transistor receives a system high voltage and a first control signal, and is coupled to a first end of the second transistor. The fourth transistor is coupled to the anode of the light-emitting diode of an adjacent green pixel, a control terminal of the third transistor, and the anode of the light-emitting diode.

Abstract: The present disclosure provides a semiconductor device, including a buffer layer, a first sub-chip and a second sub-chip, and a connecting element. The first sub-chip and the second sub-chip are separately arranged on the buffer layer. Each of the first sub-chip and the second sub-chip includes a first diffusion layer, an active layer, and a second diffusion layer. The first diffusion layer, the active layer, and the second diffusion layer are sequentially arranged on the buffer layer in a top-down approach. The first diffusion layer and the buffer layer are first-type epitaxial layers, and the second diffusion layer is a second-type epitaxial layer. The connecting element is configured to couple the second diffusion layer of the first sub-chip and the first diffusion layer of the second sub-chip.

Abstract: The present disclosure provides a light emitting diode component, including a body and a plurality of P-N diode structures. The P-N diode structures are coupled in series and integrated on the body. The P-N diode structures include a plurality of p-type doping layers and a plurality of n-type doping layers. The p-type doping layer of a first P-N diode structure in the P-N diode structures is electrically coupled to the n-type doping layer of a second P-N diode structure in the P-N diode structures.

Abstract: A pixel array is provided. The pixel array includes a plurality of pixels, wherein each of the pixels includes a light emitting diode, a first transistor, a second transistor, a third transistor, a fourth transistor, and a fifth transistor. The first transistor receives a first data signal and a first scan signal. The second transistor is coupled to the first transistor and an anode of the light emitting diode. The third transistor receives a system high voltage and a first control signal, and is coupled to the second transistor. The fourth transistor is coupled to an anode of a light emitting diode of an adjacent pixel, a control terminal of the third transistor, and a cathode of the light emitting diode. The fifth transistor is coupled to the cathode of the light emitting diode, and receives a second control signal and a system low voltage.

Abstract: Disclosed is a method for removing nitrogen and phosphorus from sewage and wastewater through a combination of a biological nitrogen and phosphorus removal process using nitrite nitrogen and an anaerobic ammonium oxidation process. An objective of an embodiment of the present invention is to provide an apparatus for removing nitrogen and phosphorus in which, by inducing a denitritation- and nitritation-based biological nitrogen and phosphorus removal process in a bioreactor and applying an anaerobic ammonium oxidation process, nitrogen and phosphorus can be economically and effectively removed without separately injecting organic materials.

Abstract: A display device includes a display panel including a flexible region and a low flexibility region, wherein the flexible region may include a first transistor including a first semiconductor layer and a first gate electrode, a first conductor connected to the first semiconductor layer, and a first interlayer insulating layer between the first transistor and the first conductor. The low flexibility region may include a second transistor including a second semiconductor layer and a second gate electrode, a second conductor connected to the second semiconductor layer, and a second interlayer insulating layer between the second transistor and the second conductor. The first interlayer insulating layer may include an organic insulating material, the second interlayer insulating layer includes an inorganic insulating material, and a ratio of channel width to channel length of the first transistor may be different from that of the second transistor.

Abstract: A color conversion element includes a base substrate, and a first color filter layer, a second color conversion layer, and a third color conversion layer disposed on the base substrate, wherein the first color filter layer, the second color conversion layer, and the third color conversion layer are sequentially arranged on a plane, and wherein an interval between the first color filter layer and the second color conversion layer or an interval between the first color filter layer and the third color conversion layer is different from an interval between the second color conversion layer and the third color conversion layer.

Abstract: A display device includes a base substrate, an organic layer on the base substrate and including a pattern region having an uneven pattern formed thereon, and a non-pattern region having a substantially flat surface, a light-emitting element on the organic layer, and a color conversion pattern on the light-emitting element and overlapping the pattern region and the non-pattern region.

Abstract: A display device includes a base substrate, an organic layer on the base substrate and including a pattern region having an uneven pattern formed thereon, and a non-pattern region having a substantially flat surface, a light-emitting element on the organic layer, and a color conversion pattern on the light-emitting element and overlapping the pattern region and the non-pattern region.

Abstract: A color conversion element includes a base substrate, and a first color filter layer, a second color conversion layer, and a third color conversion layer disposed on the base substrate, wherein the first color filter layer, the second color conversion layer, and the third color conversion layer are sequentially arranged on a plane, and wherein an interval between the first color filter layer and the second color conversion layer or an interval between the first color filter layer and the third color conversion layer is different from an interval between the second color conversion layer and the third color conversion layer.