Patents by Inventor Junfeng CUI

Junfeng CUI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12030541
    Abstract: The invention discloses a method and a system for state feedback predictive control of a high-speed train based on a forecast error. The method comprises: obtaining a speed prediction model of a high-speed train y ^ k + p = C ? A p ? x k + ? i = 1 p ? C ? A i - 1 ? B ? u k + p - i ; predicting speeds of the train at times k and k+p according to the speed prediction model; obtaining an actual speed output value of the train; determining a speed prediction error at time k according to the prediction speed of the train and the actual speed output value of the train; correcting a prediction speed of the train at time k+p, according to the speed prediction error, to obtain a corrected prediction speed of the train; calculating a control force uk of the train according to uk=??1(p)[yk+pr?yk?Kxk+?k]; and applying a control force to the train based on the control force uk.
    Type: Grant
    Filed: January 20, 2021
    Date of Patent: July 9, 2024
    Assignees: East China Jiaotong University, CRSC Research & Design Institute Group Co., Ltd.
    Inventors: Hui Yang, Ling Liu, Yating Fu, Yinghe Tong, Zhongqi Li, Junfeng Cui
  • Publication number: 20240219417
    Abstract: A speed measurement method, system and apparatus of a medium and low speed maglev train are provided. The method comprises: determining a position of a marked eddy current sensor for each eddy current pulse of each of two eddy current pulse data groups based on the eddy current pulse, distribution data of maglev steel rail sleepers and eddy current sensors; determining a first speed value based on positions of marked eddy current sensors and pulse moments respectively corresponding to two adjacent eddy current pulses; calculating a second speed value based on a first speed value corresponding to an eddy current pulse data group of which pulse moment is ranked ahead in the two eddy current pulse data groups and an acceleration sensing data; calculating a third speed value based on radar sensing data; and fusing the first, second and third speed values to obtain a final speed value.
    Type: Application
    Filed: June 20, 2023
    Publication date: July 4, 2024
    Applicants: CRSC RESEARCH & DESIGN INSTITUTE GROUP CO.,LTD., EAST CHINA JIAOTONG UNIVERSITY
    Inventors: Ling LIU, Hui YANG, Junfeng CUI, Yanli ZHOU, Jing SHI, Shuaiqiang DONG, Jia LIU, Yating FU, Zhongqi LI
  • Patent number: 11981212
    Abstract: A cooperative control method and system for electro-hydraulic hybrid braking of a middle-low speed maglev train is provided, which relates to the field of vehicle braking control. The method includes: denoising operation data of a middle-low speed maglev train; using a controlled autoregressive integrated moving average model as an electro-hydraulic hybrid braking process model for the middle-low speed maglev train, and processing denoised operation data by using a least square method to determine parameters in the controlled autoregressive integrated moving average model; establishing a generalized predictive control model with time lag compensation according to the controlled autoregressive integrated moving average model and a Smith predictor; and performing cooperative control on an electro-hydraulic hybrid braking process of the middle-low speed maglev train by using the generalized predictive control model with time lag compensation.
    Type: Grant
    Filed: September 14, 2023
    Date of Patent: May 14, 2024
    Assignees: CRSC RESEARCH & DESIGN INSTITUTE GROUP CO., LTD., EAST CHINA JIAOTONG UNIVERSITY
    Inventors: Ling Liu, Hui Yang, Junfeng Cui, Kunpeng Zhang, Qi Wang, Changyuan Wang, Qi Wang, Yanli Zhou
  • Patent number: 11313774
    Abstract: A TEM electromechanical in-situ testing method of one-dimensional materials is provided. A multi-function sample stage which can compress, buckle and bend samples is designed and manufactured. A carbon film on a TEM grid of Cu is eliminated, and the TEM grid of Cu is cut in half through the center of the circle. The samples are dispersed ultrasonically in alcohol and dropped on the edge of the semicircular grid of Cu with a pipette. A single sample is fixed on the edge of a substrate of the sample stage with conductive silver epoxy by using a micromechanical device under an optical microscope, and conductive silver paint is applied to the surface of the substrate of the sample stage; and an electromechanical in-situ testing is conducted in a TEM. This provides a simple and efficient sample preparation and testing method for a TEM electromechanical in-situ observing experiment.
    Type: Grant
    Filed: July 16, 2018
    Date of Patent: April 26, 2022
    Assignee: DALIAN UNIVERSITY OF TECHNOLOGY
    Inventors: Zhenyu Zhang, Junfeng Cui, Leilei Chen, Bo Wang, Dongming Guo
  • Patent number: 11099110
    Abstract: A method of in-situ TEM nanoindentation for a damaged layer of silicon is disclosed. Wet etching and ion beam lithography are used for preparing a silicon wedge sample. An etched silicon wedge is thinned and trimmed by a focused ion beam; thinning uses ion beam of 30 kV: 50-80 nA, and trimming uses ion beam of 5 kV: 1-6 pA; and the top width of the silicon wedge is 80-100 nm. The sample is fixed on a sample holder of an in-situ TEM nanomechanical system by using a conductive silver adhesive. The sample is indented with a tip in the TEM, so that the thickness of the damaged layer of the sample is 2-200 nm; and an in-situ nanoindentation experiment is conducted on the damaged layer of the sample in the TEM.
    Type: Grant
    Filed: March 13, 2019
    Date of Patent: August 24, 2021
    Assignee: DALIAN UNIVERSITY OF TECHNOLOGY
    Inventors: Zhenyu Zhang, Junfeng Cui, Dongdong Liu
  • Publication number: 20210080361
    Abstract: A method of in-situ TEM nanoindentation for a damaged layer of silicon is disclosed. Wet etching and ion beam lithography are used for preparing a silicon wedge sample. An etched silicon wedge is thinned and trimmed by a focused ion beam; thinning uses ion beam of 30 kV: 50-80 nA, and trimming uses ion beam of 5 kV: 1-6 pA; and the top width of the silicon wedge is 80-100 nm. The sample is fixed on a sample holder of an in-situ TEM nanomechanical system by using a conductive silver adhesive. The sample is indented with a tip in the TEM, so that the thickness of the damaged layer of the sample is 2-200 nm; and an in-situ nanoindentation experiment is conducted on the damaged layer of the sample in the TEM.
    Type: Application
    Filed: March 13, 2019
    Publication date: March 18, 2021
    Inventors: Zhenyu ZHANG, Junfeng CUI, Dongdong LIU
  • Patent number: 10942099
    Abstract: A self-healing method for fractured single crystal SiC nanowires. A hair in a Chinese brush pen of yellow weasel's hair moves and transfers nanowires, which are placed on an in-situ TEM mechanical microtest apparatus. An in-situ nanomechanical tension test is realized. The nanowires are loaded. Displacement is 0-200 nm. Fracture strength of the single crystal nanowires is 12-15 GPa. After the nanowires are fractured, unloading causes slight contact between the fractured end surfaces, electron beam is shut off, and self-healing of the nanowires is conducted in a vacuum chamber. Partial recrystallization is found at a fracture after self-healing through in-situ TEM representation. A fracture strength test is conducted again after self-healing. A fractured position after healing is the same as the position before healing. The fracture strength of the single crystal nanowires after self-healing is 1-2.5 GPa. The recovery ratio of the fracture strength is 10-20%.
    Type: Grant
    Filed: November 15, 2017
    Date of Patent: March 9, 2021
    Assignee: Dalian University of Technology
    Inventors: Zhenyu Zhang, Junfeng Cui, Yuefeng Du, Dongming Guo
  • Patent number: 10801933
    Abstract: The present invention provides a self-healing method for fractured SiC amorphous nanowires. A goat hair in a Chinese brush pen of goat hair moves and transfers single crystal nanowires under an optical microscope. On an in-situ nanomechanical test system of a TEM, local single crystal nanowires are irradiated with an electron beam for conducting amorphization transformation. Amorphous length of a single crystal after transformation is 60-100 nm. A fracture strength test is conducted on the amorphous nanowires in the single crystal after transformation in the TEM; and fracture strength of the amorphous nanowires is 9-11 GPa. After the amorphous nanowires are fractured, unloading causes a slight contact between the fractured end surfaces; and self-healing of the nanowires is conducted after waiting for 16-25 min in a vacuum chamber of the TEM. Atom diffusion is found at a healed fracture through in-situ TEM representation; and recrystallization is found in the amorphous nanowires.
    Type: Grant
    Filed: November 15, 2017
    Date of Patent: October 13, 2020
    Assignee: DALIAN UNIVERSITY OF TECHNOLOGY
    Inventors: Zhenyu Zhang, Junfeng Cui, Leilei Chen, Dongming Guo
  • Patent number: 10746760
    Abstract: The present invention provides a method for moving and transferring nanowires using tapered hair of diameter in micron range. The nanowires have a diameter of 60-150 nm. The tapered hair has a diameter of 1-100 ?m, a tip curvature radius of 0.8-3 ?m and a length of 4-10 mm. A plastic film on a copper grid used for a TEM is removed, the copper grid is reserved, and holes have a diameter of 50-100 ?m. The copper grid after ultrasonic cleaning gains the nanowires from the acetone liquid with ultrasonic dispersed nanowires. The copper grid with distributed nanowires and the tapered hair are respectively placed on mobile platforms of two different optical microscopes. Millimeter movement and micron movement of the tapered hair are realized, thereby realizing movement and transfer operation for the nanowires.
    Type: Grant
    Filed: November 15, 2017
    Date of Patent: August 18, 2020
    Assignee: DALIAN UNIVERSITY OF TECHNOLOGY
    Inventors: Zhenyu Zhang, Junfeng Cui, Bo Wang, Dongming Guo
  • Publication number: 20200132574
    Abstract: A TEM electromechanical in-situ testing method of one-dimensional materials is provided. A multi-function sample stage which can compress, buckle and bend samples is designed and manufactured. A carbon film on a TEM grid of Cu is eliminated, and the TEM grid of Cu is cut in half through the center of the circle. The samples are dispersed ultrasonically in alcohol and dropped on the edge of the semicircular grid of Cu with a pipette. A single sample is fixed on the edge of a substrate of the sample stage with conductive silver epoxy by using a micromechanical device under an optical microscope, and conductive silver paint is applied to the surface of the substrate of the sample stage; and an electromechanical in-situ testing is conducted in a TEM. This provides a simple and efficient sample preparation and testing method for a TEM electromechanical in-situ observing experiment.
    Type: Application
    Filed: July 16, 2018
    Publication date: April 30, 2020
    Inventors: Zhenyu ZHANG, Junfeng CUI, Leilei CHEN, Bo WANG, Dongming GUO
  • Publication number: 20200080921
    Abstract: A self-healing method for fractured SiC single crystal nanowires. A hair in a Chinese brush pen of yellow weasel's hair moves and transfers nanowires, which are placed on an in-situ TEM mechanical microtest apparatus. An in-situ nanomechanical tension test is realized. The nanowires are loaded. Displacement is 0-200 nm. Fracture strength of the single crystal nanowires is 12-15 GPa. After the nanowires are fractured, unloading causes slight contact between the fractured end surfaces, electron beam is shut off, and self-healing of the nanowires is conducted in a vacuum chamber. Partial recrystallization is found at a fracture after self-healing through in-situ TEM representation. A fracture strength test is conducted again after self-healing. A fractured position after healing is the same as the position before healing. The fracture strength of the single crystal nanowires after self-healing is 1-2.5 GPa. The recovery ratio of the fracture strength is 10-20%.
    Type: Application
    Filed: November 15, 2017
    Publication date: March 12, 2020
    Inventors: Zhenyu ZHANG, Junfeng CUI, Yuefeng DU, Dongming GUO
  • Publication number: 20200081033
    Abstract: The present invention provides a method for moving and transferring nanowires using tapered hair of diameter in micron range. The nanowires have a diameter of 60-150 nm. The tapered hair has a diameter of 1-100 ?m, a tip curvature radius of 0.8-3 ?m and a length of 4-10 mm. A plastic film on a copper grid used for a TEM is removed, the copper grid is reserved, and holes have a diameter of 50-100 ?m. The copper grid after ultrasonic cleaning gains the nanowires from the acetone liquid with ultrasonic dispersed nanowires. The copper grid with distributed nanowires and the tapered hair are respectively placed on mobile platforms of two different optical microscopes. Millimeter movement and micron movement of the tapered hair are realized, thereby realizing movement and transfer operation for the nanowires.
    Type: Application
    Filed: November 15, 2017
    Publication date: March 12, 2020
    Inventors: Zhenyu ZHANG, Junfeng CUI, Bo WANG, Dongming GUO
  • Publication number: 20200018670
    Abstract: The present invention provides a self-healing method for fractured SiC amorphous nanowires. A goat hair in a Chinese brush pen of goat hair moves and transfers single crystal nanowires under an optical microscope. On an in-situ nanomechanical test system of a TEM, local single crystal nanowires are irradiated with an electron beam for conducting amorphization transformation. Amorphous length of a single crystal after transformation is 60-100 nm. A fracture strength test is conducted on the amorphous nanowires in the single crystal after transformation in the TEM; and fracture strength of the amorphous nanowires is 9-11 GPa. After the amorphous nanowires are fractured, unloading causes a slight contact between the fractured end surfaces; and self-healing of the nanowires is conducted after waiting for 16-25 min in a vacuum chamber of the TEM. Atom diffusion is found at a healed fracture through in-situ TEM representation; and recrystallization is found in the amorphous nanowires.
    Type: Application
    Filed: November 15, 2017
    Publication date: January 16, 2020
    Inventors: Zhenyu ZHANG, Junfeng CUI, Leilei CHEN, Dongming GUO