Abstract: Embodiments of the present application provide a thin film transistor, a method for fabricating the thin film transistor, and a display panel. The thin film transistor includes: a substrate; an active layer formed on the substrate; a gate insulation layer located on a side of the active layer facing away from the substrate; and a gate electrode located on a side of the gate insulation layer facing away from the active layer, where in a direction from the gate insulation layer to the substrate, the concentration of implanted ions in at least a partial region of the active layer has a decreasing trend, and the concentration of implanted ions in the gate insulation layer is less than the concentration of implanted ions in the active layer. The present application can relieve the problem of display image sticking caused by driving hysteresis of thin film transistors.

Abstract: A voice conversion method used in an electronic device, including determining a target speech to be converted and a content representation vector corresponding to the target speech, where the target speech has a first content and a first voiceprint, and the content representation vector is obtained based on the speech waveform of the target speech; determining a reference speech and a voiceprint representation vector corresponding to the reference speech, where the reference speech has a second voiceprint, and the second voiceprint is different from the first voiceprint; generating a converted speech based on a speech generator according to the content representation vector and the voiceprint representation vector; where the converted speech has the first content and the second voiceprint; where the speech generator is obtained by jointly training a preset speech generation network and a preset discriminator network by using a training speech having the second voiceprint.

Abstract: The present invention belongs to the pharmaceutical field, and discloses an anti-ovarian cancer pharmaceutical composition and an action target thereof. The anti-tumor pharmaceutical composition includes a Curcuma zedoaria extract and an Astragalus membranaceus extract, which synergistically enhance the efficacy by combining calycosin and bisdemethoxycurcumin to reduce the pharmaceutical dosage, minimize side effects, and save costs. An MCM2 gene, as an action target of the anti-ovarian cancer pharmaceutical composition, has been discovered. This gene has a significant impact on the proliferation, migration, and invasion abilities of ovarian cancer, providing guidance for the development and screening of a drug for preventing or treating ovarian cancer.

Abstract: A pixel circuit and a driving method therefor, and a display panel are disclosed. The pixel circuit includes a drive module, a data writing module, and a light-emitting module. The data writing module includes a first transistor (T1) and a second transistor (T2) that are connected in series. The first transistor (T1) is a low-temperature polysilicon transistor, and the second transistor (T2) is an oxide transistor. The data writing module is configured to transmit a data voltage (Vdata) to the drive module. The drive module is configured to drive, based on the data voltage (Vdata), the light-emitting module to emit light.

Abstract: A pixel circuit, a driving method therefor and a display panel are disclosed. The pixel circuit is configured to include a reset module, where the reset module is electrically connected to a first terminal or a second terminal of a driving module; and the reset module resets potentials of the first terminal and the second terminal of the driving module between a data writing stage and a light emission stage of a writing frame, and resets the potentials of the first terminal and the second terminal of the driving module before a light emission stage of an idle frame.

Abstract: The present disclosure provides a two-color LED light circuit and an LED light control circuit, including an LED light switch control module configured for connecting with a switch signal chip and an LED light assembly, an overcurrent protection module connected with the LED light switch control module and configured for detecting overcurrent of the LED light assembly and disconnecting current of the LED light switch control module, an overtemperature protection module connected with the LED light switch control module and configured for detecting overtemperature of the LED light control circuit and disconnecting current of the LED light switch control module, and an under-voltage protection module connected with an LED light assembly voltage input and the LED light switch control module, configured for detecting an input voltage of the LED light assembly and disconnecting the current of the LED light switch control module when the input voltage is too low.

Abstract: The present disclosure relates to the field of microelectronic manufacturing technology, in particular to a SOT-MRAM memory cell and a method of manufacturing a SOT-MRAM memory cell. The SOT-MRAM memory cell includes a bottom electrode layer, a magnetic tunnel junction, an antiferromagnetic layer and a top electrode layer provided sequentially from bottom to top, where the magnetic tunnel junction includes a free layer, a tunneling layer and a pinning layer, the bottom electrode layer is a stack of odd number of layers, and the odd number of layers include at least one W metal layer and at least one Ta metal layer.

Abstract: This application provides a light update method for a virtual scene in response to a content change performed by an electronic device. The method includes: performing voxelization processing on a virtual scene to obtain a plurality of initial voxels corresponding to the virtual scene, each initial voxel carrying light information of a corresponding position in the virtual scene; selecting at least one voxel from the plurality of initial voxels in response to the content change in the virtual scene; updating light information carried in the at least one selected voxel, to obtain an updated voxel corresponding to the at least one selected voxel; and updating light information of a virtual viewpoint in the virtual scene based on the updated voxel and other initial voxels whose light information has not been updated.

Abstract: Provided are a pixel circuit, a method of driving the same, and a display panel. The pixel circuit includes a drive module, a storage module, a coupling module, a first reset module, a second reset module, a discharge module, a data write module, and a light emission control module. The storage module is electrically connected to the control terminal of the drive module and the first terminal of the drive module. The first terminal of the coupling module is electrically connected to the first terminal of the drive module. The first reset module is electrically connected to the second terminal of the coupling module. The second reset module is electrically connected to the control terminal of the drive module. The discharge module is electrically connected to the second terminal of the drive module.

Abstract: Provided are an array substrate, a driving method thereof, and a display panel. The array substrate includes a drive module, an initialization module, a data write module, a storage module, a threshold compensation module, and a light emission control module; where the storage module is configured to store a potential difference between a first connection terminal of the storage module and a second connection terminal of the storage module and couple a potential change of the first connection terminal of the storage module to the second connection terminal of the storage module; the initialization module controls, in response to a first control signal, a potential of the first connection terminal of the storage module and initializes, in response to a second control signal, a first electrode of a light-emitting diode; the threshold compensation module is switched on in response to the first control signal.

Abstract: The present disclosure relates to a method of manufacturing a fin in a transistor and a method of manufacturing a fin field effect transistor. The method of manufacturing the fin in the transistor includes: epitaxially growing a semiconductor layer on a substrate; etching the semiconductor layer into a fin-shaped portion by using a spacer transfer technique; oxidizing a sidewall of the fin-shaped portion with ozone, so as to form an oxide film on the sidewall; and etching the oxide film by using an atomic layer etching method, so as to remove the oxide film.

Abstract: The present disclosure relates to a nanosheet gate-all-around transistor and a method of manufacturing a nanosheet gate-all-around transistor. The nanosheet gate-all-around transistor includes: a substrate having a shallow trench isolation structure on a surface of the substrate; a nanosheet stacking portion provided above the substrate, where the nanosheet stacking portion includes a stack formed by a plurality of nanosheets, the stack formed by the nanosheets constitutes a plurality of conductive channels, and the nanosheets are graphene nanosheets; a gate-all-around surrounding the nanosheet stacking portion; and a source/drain region located on two opposite sides of the nanosheet stacking portion, where a spacer is provided between the source/drain region and the gate-all-around.

Abstract: A first data write module of a pixel circuit, in response to an effective potential of a first control signal, writes a global data voltage on a first global signal line to a gate node of a drive module in a write frame and at least one retention frame to increase the frequency of writing data or prolong the duration of writing data at the gate node of the drive module during a low-frequency image refresh. A second data write module of the pixel circuit, in response to an effective potential of a second control signal, writes a data control voltage on a data line to a control node in the write frame to enable the control node to have a control potential, and maintains the potential of the control node at the control potential in the retention frame.

Abstract: The present application relates to an array base plate, a display panel, and a method for manufacturing an array base plate, and the array base plate includes: a substrate; a device layer stacked on a side of the substrate along a thickness direction thereof, wherein the device layer includes a first type transistor, a second type transistor, and a capacitor, the first type transistor includes a first source-drain electrode, the second type transistor includes a second source-drain electrode, and the capacitor includes a first electrode plate and a second electrode plate; wherein the first electrode plate is provided on the same layer as at least one of the first source-drain electrode and the second source-drain electrode, and the second electrode plate is provided on a side of the first type transistor and the second type transistor away from the substrate along the thickness direction.

Abstract: The present application discloses a pixel circuit and method for driving the same, and a display panel. The pixel circuit includes a drive module, where the drive module includes a drive transistor. The drive transistor is a dual-gate transistor and includes a first gate and a second gate. The drive transistor is configured to regulate a threshold voltage of the drive transistor in response to a voltage at the second gate, and generate a driving current in response to a voltage at the first gate. The pixel circuit further includes a threshold voltage regulation module electrically connected to the drive module. The threshold voltage regulation module is configured to separately write a preset voltage into the first gate and the second gate, and regulate the threshold voltage of the drive transistor to a preset threshold voltage.

Abstract: The present disclosure discloses a deep ultraviolet lithography method, a lithography pattern and a semiconductor structure, which relates to the field of deep ultraviolet lithography technology. The deep ultraviolet lithography method includes: dividing, when a depth of field of the deep ultraviolet lithography is less than a height of the step of the substrate, a pattern to be photoetched into at least two portions according to a distribution situation of the step, where each of the at least two portions corresponds to an on-step pattern or an off-step pattern of the step; corresponding the at least two portions of the pattern to be photoetched onto at least two masks respectively; and simultaneously baking and developing the exposed at least two masks after the at least two masks are exposed sequentially.

Abstract: A photosensitive circuit structure and an optical device, where the photosensitive circuit structure includes a photosensitive unit, a signal amplification unit and a control unit; the photosensitive unit includes a photodiode and a reset transistor, the signal amplification unit includes an amplification transistor, and the control unit includes a control transistor; an input terminal, an output terminal and a control terminal of the reset transistor are electrically connected to a power supply terminal, a control terminal of the amplification transistor and a reset signal terminal, respectively; an input terminal and output terminal of the amplification transistor are electrically connected to the power supply terminal and an input terminal of the control transistor respectively, and a control terminal of the control transistor is connected to a signal control terminal.

Abstract: A display panel comprises a plurality of sub-pixels and a plurality of light-transmitting reserved regions. The plurality of sub-pixels include a plurality of first sub-pixels, a plurality of second sub-pixels, and a plurality of third sub-pixels, one of the second sub-pixels and one of the light-transmitting reserved regions are adjacently arranged to form a combined region. A plurality of first sub-pixels and a plurality of combined regions are arranged in each first pixel row, and a plurality of third sub-pixels are arranged in each second pixel row. In two adjacent first pixel rows, a pixel arrangement of the combined region located in one first pixel row and another pixel arrangement of the combined region located in the other first pixel row are different, and have the same structures if one of the two combined regions is rotated by 90 degrees.

Abstract: A gate driving circuit and a driving method thereof, and a display device that belong to the field of display technology. The gate driving circuit includes an input module and a storage module. The input module is connected to each of a first node and a signal input terminal of the gate driving circuit and configured to control the potential of the first node according to the potential of the signal input terminal. An input terminal of the storage module is connected to the first node. The storage module is configured to store the potential of the first node and control the potential of an output terminal of the storage module according to the potential of the first node.

Abstract: The present disclosure relates to a method of obtaining a nanoscale line by using a laser, including: forming a dielectric layer and an amorphous silicon layer on a substrate sequentially; irradiating a mask plate by using the laser to perform a silicon crystallization in a partial region of the amorphous silicon layer, where a grain boundary of a polycrystalline silicon formed by the silicon crystallization in the partial region of the amorphous silicon layer is determined by a spacing between holes with a regular shape on the mask plate; performing a planarization process on the grain boundary of the polycrystalline silicon of the amorphous silicon layer; removing the grain boundary by using a corrosion solution to form a grain boundary trench; and obtaining the nanoscale line on the substrate by using the grain boundary trench.