Patents by Inventor Jung-bin Yun
Jung-bin Yun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10700115Abstract: An image sensor includes a substrate including unit pixels. Each of the unit pixels includes photoelectric conversion elements and storage diodes.Type: GrantFiled: January 15, 2019Date of Patent: June 30, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyuk Soon Choi, Jung Bin Yun, Jungchak Ahn
-
Publication number: 20200168644Abstract: Disclosed is a complementary metal oxide semiconductor (CMOS) image sensor. The image sensor comprises a first separation zone in a substrate, the first separation zone defining first and second pixel regions arranged in a first direction, the first separation zone including first parts substantially parallel extending in the first direction, and the substrate including a first active region vertically overlapping one of the first parts and a second active region vertically overlapping another of the first parts. The image sensor further comprises first and second photoelectric conversion devices arranged in the first direction on at least one of the first and second pixel regions in the substrate, and a source follower gate on the first active region of the substrate.Type: ApplicationFiled: January 29, 2020Publication date: May 28, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Jung Bin YUN, Kyungho LEE, Sung-Ho ChOI
-
Publication number: 20200119066Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.Type: ApplicationFiled: December 12, 2019Publication date: April 16, 2020Inventors: Jung Bin YUN, Eun Sub SHIM, Kyung Ho LEE, Sung Ho CHOI, Jung Hoon PARK, Jung Wook LIM, Min Ji JUNG
-
Publication number: 20200119065Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.Type: ApplicationFiled: December 12, 2019Publication date: April 16, 2020Inventors: Jung Bin YUN, Eun Sub SHIM, Kyung Ho LEE, Sung Ho CHOI, Jung Hoon PARK, Jung Wook LIM, Min Ji JUNG
-
Publication number: 20200119064Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.Type: ApplicationFiled: December 12, 2019Publication date: April 16, 2020Inventors: Jung Bin YUN, Eun Sub SHIM, Kyung Ho LEE, Sung Ho CHOI, Jung Hoon PARK, Jung Wook LIM, Min Ji JUNG
-
Patent number: 10608032Abstract: Disclosed is a complementary metal oxide semiconductor (CMOS) image sensor. The image sensor comprises a first separation zone in a substrate, the first separation zone defining first and second pixel regions arranged in a first direction, the first separation zone including first parts substantially parallel extending in the first direction, and the substrate including a first active region vertically overlapping one of the first parts and a second active region vertically overlapping another of the first parts. The image sensor further comprises first and second photoelectric conversion devices arranged in the first direction on at least one of the first and second pixel regions in the substrate, and a source follower gate on the first active region of the substrate.Type: GrantFiled: January 13, 2017Date of Patent: March 31, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Jung Bin Yun, Kyungho Lee, Sung-Ho Choi
-
Patent number: 10573676Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.Type: GrantFiled: January 4, 2018Date of Patent: February 25, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Jung Bin Yun, Eun Sub Shim, Kyung Ho Lee, Sung Ho Choi, Jung Hoon Park, Jung Wook Lim, Min Ji Jung
-
Publication number: 20190230302Abstract: An image sensor includes a photoelectric converter to generate charges in response to incident light and to provide the generated charges to a first node, a transfer transistor to provide a voltage of the first node to a floating diffusion node based on a first control signal, a source follower transistor to provide a voltage of the floating diffusion node as a unit pixel output, a correlated double sampler (CDS) to receive the unit pixel output and to convert the unit pixel output into a digital code. The first control signal having first, second, and third voltages is maintained at the second voltage in a period between when the voltage of the first node is provided to the floating diffusion node and when the CDS is provided with the voltage of the first node as the unit pixel output.Type: ApplicationFiled: September 5, 2018Publication date: July 25, 2019Inventors: Jung wook LIM, Sung Soo CHOI, Eun Sub SHIM, Jung Bin YUN, Sung-Ho CHOI
-
Publication number: 20190148447Abstract: An image sensor includes a substrate including unit pixels. Each of the unit pixels includes photoelectric conversion elements and storage diodes.Type: ApplicationFiled: January 15, 2019Publication date: May 16, 2019Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyuk Soon Choi, Jung Bin Yun, Jungchak Ahn
-
Patent number: 10199421Abstract: An image sensor includes a substrate including unit pixels. Each of the unit pixels includes photoelectric conversion elements and storage diodes.Type: GrantFiled: December 4, 2015Date of Patent: February 5, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyuk Soon Choi, Jung Bin Yun, Jungchak Ahn
-
Publication number: 20180294297Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.Type: ApplicationFiled: January 4, 2018Publication date: October 11, 2018Inventors: Jung Bin Yun, Eun Sub Shim, Kyung Ho Lee, Sung Ho Choi, Jung Hoon Park, Jung Wook Lim, Min Ji Jung
-
Publication number: 20180191980Abstract: An image sensor may optimize control of each pixel and/or each photodiode therein according to various pixel structures therein. An electronic apparatus may include the image sensor. The image sensor may include a plurality of pixels, each including a photodiode and a transfer transistor configured to transfer charges accumulated in the photodiode to a floating diffusion floating diffusion region, and transfer transistor lines respectively connected to gate electrodes of the transfer transistors of the pixels. The transfer transistor lines may receive voltages having different magnitudes.Type: ApplicationFiled: December 21, 2017Publication date: July 5, 2018Applicant: Samsung Electronics Co., Ltd.Inventors: Jung-bin Yun, Kyung-ho Lee
-
Publication number: 20170207259Abstract: Disclosed is a complementary metal oxide semiconductor (CMOS) image sensor. The image sensor comprises a first separation zone in a substrate, the first separation zone defining first and second pixel regions arranged in a first direction, the first separation zone including first parts substantially parallel extending in the first direction, and the substrate including a first active region vertically overlapping one of the first parts and a second active region vertically overlapping another of the first parts. The image sensor further comprises first and second photoelectric conversion devices arranged in the first direction on at least one of the first and second pixel regions in the substrate, and a source follower gate on the first active region of the substrate.Type: ApplicationFiled: January 13, 2017Publication date: July 20, 2017Applicant: Samsung Electronics Co., Ltd.Inventors: Jung Bin YUN, Kyungho LEE, Sung-Ho CHOI
-
Publication number: 20160211306Abstract: An image sensor includes a substrate including unit pixels. Each of the unit pixels includes photoelectric conversion elements and storage diodes.Type: ApplicationFiled: December 4, 2015Publication date: July 21, 2016Inventors: Hyuk Soon CHOI, JUNG BIN YUN, JUNGCHAK AHN
-
Patent number: 9380242Abstract: An image sensor according to an example embodiment of includes a first pixel and a second pixel in a first row. The first pixel includes a first photoelectric conversion element at a first depth in a semiconductor substrate and the first photoelectric conversion element is configured to convert a first visible light spectrum into a first photo charge, and the second pixel includes a second photoelectric conversion element at a second depth from the first depth in the semiconductor substrate, the second photoelectric conversion element is at least partially overlapped by the first photoelectric conversion element in a vertical direction, and the second photoelectric conversion element is configured to convert a second visible light spectrum into a second photo charge.Type: GrantFiled: September 25, 2014Date of Patent: June 28, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seoung Hyun Kim, Mun Hwan Kim, Chan Hyung Kim, Jung Bin Yun, Young Gu Jin, Seung Won Cha
-
Patent number: 9240512Abstract: Provided is an image sensor including a semiconductor substrate having a trench and having a first conductivity type, a photoelectric conversion layer formed in the semiconductor substrate below the trench to have a second conductivity type, first and second transfer gate electrodes provided in the trench covered with a gate insulating layer, a first charge-detection layer formed in the semiconductor substrate adjacent to the first transfer gate electrode, and a second charge-detection layer formed in the semiconductor substrate adjacent to the second transfer gate electrode.Type: GrantFiled: July 14, 2014Date of Patent: January 19, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Sungchul Kim, Hyoungsoo Ko, Wonjoo Kim, Jung Bin Yun, Kwang-Min Lee
-
Publication number: 20150115291Abstract: Provided is an image sensor including a semiconductor substrate having a trench and having a first conductivity type, a photoelectric conversion layer formed in the semiconductor substrate below the trench to have a second conductivity type, first and second transfer gate electrodes provided in the trench covered with a gate insulating layer, a first charge-detection layer formed in the semiconductor substrate adjacent to the first transfer gate electrode, and a second charge-detection layer formed in the semiconductor substrate adjacent to the second transfer gate electrode.Type: ApplicationFiled: July 14, 2014Publication date: April 30, 2015Inventors: Sungchul Kim, Hyoungsoo Ko, Wonjoo Kim, Jung Bin Yun, Kwang-Min Lee
-
Publication number: 20150116565Abstract: An image sensor according to an example embodiment of includes a first pixel and a second pixel in a first row. The first pixel includes a first photoelectric conversion element at a first depth in a semiconductor substrate and the first photoelectric conversion element is configured to convert a first visible light spectrum into a first photo charge, and the second pixel includes a second photoelectric conversion element at a second depth from the first depth in the semiconductor substrate, the second photoelectric conversion element is at least partially overlapped by the first photoelectric conversion element in a vertical direction, and the second photoelectric conversion element is configured to convert a second visible light spectrum into a second photo charge.Type: ApplicationFiled: September 25, 2014Publication date: April 30, 2015Inventors: Seoung Hyun KIM, Mun Hwan KIM, Chan Hyung KIM, Jung Bin YUN, Young Gu JIN, Seung Won CHA
-
Patent number: 8785982Abstract: A unit pixel of a depth sensor including a light-intensity output circuit configured to output a pixel signal according to a control signal, the pixel signal corresponding to a first electric charge and a second electric charge, a first light-intensity extraction circuit configured to generate the first electric charge and transmit the first electric charge to the light-intensity output circuit, the first electric charge varying according to an amount of light reflected from a target object and a second light-intensity extraction circuit configured to generate the second electric charge and transmit the second electric charge to the light-intensity output circuit, the second electric charge varying according to the amount of reflected light. The light-intensity output circuit includes a first floating diffusion node. Accordingly, it is possible to minimize waste of a space, thereby manufacturing a small-sized pixel.Type: GrantFiled: September 13, 2012Date of Patent: July 22, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Woo Joo Kim, Hyoung Soo Ko, Yoon Dong Park, Jung Bin Yun
-
Publication number: 20140103412Abstract: A three-dimensional image sensor includes a first photoelectric converter in a first pixel region of a substrate, a second photoelectric converter in a second pixel region of the substrate, a first transfer gate structure disposed on the substrate at one side of the first photoelectric converter, a second transfer gate structure and a drain gate structure disposed on the substrate at opposite sides of the second photoelectric converter and whose gate insulating layers are thinner the gate insulating layer of the first transfer gate structure. The gate insulating layers can be fabricated by forming a first insulating layer on the pixel regions of the substrate, removing part of the first insulating layer from the second pixel region, and subsequently forming a second insulating layer on the substrate including over a part of the first insulating layer which remains on the first pixel region.Type: ApplicationFiled: September 26, 2013Publication date: April 17, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: KWANG-MIN LEE, WONJOO KIM, DOOCHEOL PARK, JUNG BIN YUN, JUNGWOOK LIM