Abstract: Proposed are a wafer heating apparatus and a wafer processing apparatus using the same. More particularly, proposed are a wafer heating apparatus having an improved structure to enable efficient cooling of a terminal block, and a wafer processing apparatus using the same. A wafer heating apparatus for heating a wafer according to one embodiment includes a heater disposed below the wafer and configured to serve as a heat source, a cooling plate disposed below the heater and configured to provide cool air, and a terminal block configured to supply power to the heater and having a lower end portion in contact with the cooling plate.

Abstract: The present disclosure provides an apparatus for treating a substrate, comprising: a chemical discharge pipe; a cover configured to surround the chemical discharge pipe; a buffer disposed in a space between the chemical discharge pipe and the cover; a chemical supplier configured to supply a chemical to the chemical discharge pipe; a cleaning liquid supplier configured to supply a cleaning liquid via the cover; and a dry gas supplier configured to supply a dry gas via the cover, wherein the supplied cleaning liquid is sprayed by passing through the buffer via a space between the outside of the chemical discharge pipe and the inside of the cover to clean a tip of the chemical discharge pipe, and the supplied dry gas is sprayed by passing through the buffer via the space between the outside of the chemical discharge pipe and the inside of the cover to dry the tip of the chemical discharge pipe.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a treating bath for liquid treating a plurality of substrates and having an accommodation space for accommodating a treating liquid; and a posture changing member for changing a posture of a substrate which is immersed in the treating liquid from a vertical posture to a horizontal posture.

Abstract: Disclosed is a support unit. The support unit that supports a substrate may include a chuck stage that is rotatable, a heating member disposed above the chuck stage and that heats the substrate supported by the support unit, a power source that applies electric power to the heating member, a window disposed above the chuck stage and defining an interior space, in which the heating member is disposed, and an interlock module that selectively cuts off the electric power applied to the heating member.

Abstract: The inventive concept provides a substrate support unit comprising a chuck supporting and rotating a substrate; and a lamp unit provided below the substrate to heat the substrate, wherein the lamp unit comprises a first lamp having a reflective layer on the surface thereof, to block and/or reflect a light which is emitted from the first lamp but not directed to the substrate to direct the light to the substrate.

Abstract: Provided is a support unit for supporting a substrate, the support unit including: a heating member configured to transmit thermal energy to a supported substrate; a reflective plate disposed under the heating member and configured to reflect thermal energy generated by the heating member to the substrate; a cooling plate disposed under the reflective plate and formed with a cooling flow path in which a cooling fluid flows; and a gas supply line configured to supply gas to a space between the reflective plate and the cooling plate.

Abstract: A substrate treating apparatus is provided which includes a treating container of which a top end is opened, a substrate support unit placed in a treating container to support a substrate, a treatment solution supply unit supplying a treatment solution to a substrate put on the support unit, and a heating unit placed in the substrate support unit to heat the substrate. The heating unit includes a heating element and a reflection element reflecting a heat from the heating element upward.

Abstract: Provided is a substrate treating apparatus. The substrate treating apparatus includes a treating container having an opened upper portion, a substrate heating unit heating a substrate disposed in the treating container while supporting the substrate, and a treating solution supply unit supplying a treating solution onto the substrate disposed on the substrate heating unit. The substrate heating unit includes a rotatable chuck stage on which the substrate is placed, a rotation part having a hollow shape, the rotation part being coupled to the chuck stage to rotate the chuck stage, and a heat generation part disposed in the chuck stage.

Abstract: A substrate treating apparatus is provided which includes a treating container of which a top end is opened, a substrate support unit placed in a treating container to support a substrate, a treatment solution supply unit supplying a treatment solution to a substrate put on the support unit, and a heating unit placed in the substrate support unit to heat the substrate. The heating unit includes a heating element and a reflection element reflecting a heat from the heating element upward.

Abstract: Provided is a substrate treating apparatus. The substrate treating apparatus includes a treating container having an opened upper portion, a substrate heating unit heating a substrate disposed in the treating container while supporting the substrate, and a treating solution supply unit supplying a treating solution onto the substrate disposed on the substrate heating unit. The substrate heating unit includes a rotatable chuck stage on which the substrate is placed, a rotation part having a hollow shape, the rotation part being coupled to the chuck stage to rotate the chuck stage, and a heat generation part disposed in the chuck stage.

Abstract: Provided are a single type substrate treating apparatus and method. A polishing unit is disposed in a process chamber for polishing a substrate chemically and mechanically, and a cleaning unit is disposed in the same process chamber for cleaning the substrate. Therefore, according to the single substrate treating apparatus and method, a polishing process and a cleaning process can be performed on a substrate in the same process chamber by a single substrate treating method in which substrates are treated one by one.

Abstract: Provided are a substrate supporting unit and a single type substrate polishing apparatus using the substrate supporting unit. During a polishing process, the bottom surface of a substrate is attached to the substrate supporting unit by vacuum suction, and during a post-cleaning process, the substrate is supported by the substrate supporting unit at a position spaced apart from the substrate supporting unit for cleaning the bottom surface of the substrate. Therefore, according to the substrate supporting unit and the substrate polishing apparatus using the substrate supporting unit, in a state where the substrate is supported by the single type substrate supporting unit, a process for polishing the top surface of the substrate and a post-process for cleaning the top and bottom surfaces of the substrate can be sequentially performed.

Abstract: A spin head includes chucking pins configures to chuck and unchuck a substrate. Contact portions of the chucking pins and the substrate are varied during a process to prevent a treating solution from remaining at the contact portions.

Abstract: Provided are a substrate supporting unit and a single type substrate polishing apparatus using the substrate supporting unit. During a polishing process, the bottom surface of a substrate is attached to the substrate supporting unit by vacuum suction, and during a post-cleaning process, the substrate is supported by the substrate supporting unit at a position spaced apart from the substrate supporting unit for cleaning the bottom surface of the substrate. Therefore, according to the substrate supporting unit and the substrate polishing apparatus using the substrate supporting unit, in a state where the substrate is supported by the single type substrate supporting unit, a process for polishing the top surface of the substrate and a post-process for cleaning the top and bottom surfaces of the substrate can be sequentially performed.

Abstract: Provided are a single type substrate treating apparatus and method. A polishing unit is disposed in a process chamber for polishing a substrate chemically and mechanically, and a cleaning unit is disposed in the same process chamber for cleaning the substrate. Therefore, according to the single substrate treating apparatus and method, a polishing process and a cleaning process can be performed on a substrate in the same process chamber by a single substrate treating method in which substrates are treated one by one.

Abstract: A spin head includes chucking pins configures to chuck and unchuck a substrate. Contact portions of the chucking pins and the substrate are varied during a process to prevent a treating solution from remaining at the contact portions.