Abstract: An acoustic metasurface structure is configured to absorb sounds. The acoustic metasurface structure comprises a main body, an externally-connecting configuration and an inner configuration. The externally-connecting configuration and the inner configuration are respectively formed inside the main body. An externally-connecting tube of the externally-connecting configuration is in fluid communication with an external environment and an externally-connecting cavity of the externally-connecting configuration. An inner tube of the inner configuration is in fluid communication with the externally-connecting cavity and an inner cavity of the inner configuration. With the externally-connecting configuration and the inner configuration forming a series-type structure in the main body, the acoustic metasurface structure increases an acoustic impedance.

Abstract: A method of forming a memory cell structure in a semiconductor substrate that does not have a shorting problem between a floating gate and a source/drain region of the substrate by depositing a thick spacer oxide layer on top of the floating gate and the source/drain region to a sufficient thickness such that electrical insulation is provided thereinbetween to prevent the occurrence of a short or the formation of a silicide bridge. The invention is also directed to a semiconductor device fabricated by the method.

Abstract: A method of forming a memory cell structure in a semiconductor substrate that does not have a shorting problem between a floating gate and a source/drain region of the substrate by depositing a thick spacer oxide layer on top of the floating gate and the source/drain region to a sufficient thickness such that electrical insulation is provided thereinbetween to prevent the occurrence of a short or the formation of a silicide bridge. The invention is also directed to a semiconductor device fabricated by the method.