Abstract: A semiconductor integrated circuit may include a first power line, a second power line, a third power line and a protection circuit. The first power line may receive an external voltage. The second power line may receive a voltage greater than the external voltage. The third power line may receive a voltage less than the external voltage applied to the first power line and the voltage applied to the second power line. The protection circuit may from a current path between the first power line, the second power line and the third power line when a surge voltage may be applied to the first power line to discharge the surge voltage to the third power line.

Abstract: An electrostatic discharge protection circuit includes a diode chain coupled between a power supply voltage end and a control node, a control voltage generator configured to generate a control voltage in response to a first current flowing through the diode chain, and a discharger configured to discharge a second current from the power supply voltage end to a ground voltage end in response to the control voltage, wherein the diode chain includes a plurality of P-well regions formed in an N-well region, diodes formed in the respective P-well regions, and a resistor coupled between the diodes.

Abstract: An electrostatic discharge protection circuit includes a diode chain coupled between a power supply voltage end and a control node, a control voltage generator configured to generate a control voltage in response to a first current flowing through the diode chain, and a discharger configured to discharge a second current from the power supply voltage end to a ground voltage end in response to the control voltage, wherein the diode chain includes a plurality of P-well regions formed in an N-well region, diodes formed in the respective P-well regions, and a resistor coupled between the diodes.

Abstract: An electrostatic discharge (ESD) protection circuit protects a gate oxide of elements in an internal circuit against ESD. During an ESD test, if the sum of driving voltages of ESD protectors connected between a power pad and a ground pad is higher than the gate oxide breakdown voltage of elements in the internal circuit, the structure of the ESD protector is changed or another ESD protector is additionally provided so as to protect the gate oxide of the elements in the internal circuit against ESD.

Abstract: An electrostatic discharge circuit includes a trigger section configured to detect voltage drops occurring by an electrostatic current transmitted to first and second voltage lines, and to provide pull-up and pull-down detection voltages, an auxiliary discharge section configured to operate by the pull-up and pull-down detection voltages, and to discharge the electrostatic current introduced through an input/output pad to the first and second voltage lines, a main discharge section configured to operate by the pull-down detection voltage, to electrically connecting the first and second voltage lines, and to discharge the electrostatic current, and a CDM discharge section configured to operate by the pull-down detection voltage, and to discharge the electrostatic current supplied from the input/output pad to an internal circuit.

Abstract: An electrostatic discharge protection device includes a power supply line and a ground line. A voltage detection unit detects first and second detection voltages by forming an electrical connection between the power supply line and the ground line in response to alternating current of electrostatic current. A first transfer unit transfers the electrostatic current into the power supply line by forming an electrical connection between the input/output pad and the power supply line in response to the first detection voltage. A second transfer unit transfers the electrostatic current into the ground line by forming an electrical connection between the input/output pad and the ground line in response to the second detection voltage. A discharge unit discharges the electrostatic current flowing into the power supply line or the ground line by forming an electrical connection between the power supply line and the ground line in response to the second detection voltage.

Abstract: An ESD protection circuit includes a detector coupled between a data power source line and a data ground voltage line to detect static electricity and to output a detection voltage at a detection node, a pre-driver coupled between a power source voltage line and a ground voltage line to output a driving signal at a control node, a data output driver coupled between a data input/output pad and the data ground voltage line to output data in response to the driving signal, and a controller coupled between the control node and the data ground voltage line to couple a terminal of the data output driver with the data ground voltage line based on the detection voltage when the static electricity is input.

Abstract: An electrostatic discharge device includes a first protection element including a MOS transistor type first diode, which provides a first capacitor including a first insulation layer, and provides a first path between an input/output pad and a power supply voltage line using the first diode, for discharging static electricity, a second protection element providing a second path between the input/output pad and a ground voltage line for discharging the static electricity, a trigger circuit including a resistor that is connected in series to the first capacitor, and a power clamp element providing a third path for discharging the static electricity between the power supply voltage line and the ground voltage line by a voltage applied to the resistor.

Abstract: A circuit for protecting a semiconductor device from electrostatic discharge by protecting an internal circuit from electrostatic current flowing into an input/output pad includes a first discharge unit that discharges the electrostatic current to a first power supply line or a second power supply line. A second discharge unit protects the internal circuit from electrostaticity flowing from the input/output pad or the second power supply line. A power clamp unit discharges the electrostatic current, which is discharged to the first power supply line or the second power supply line by the first discharge unit, to the opposite power supply line. A trigger unit drives the first discharge unit and the power clamp unit with first and second detection voltages generated in response to a voltage drop of the discharged electrostatic current.

Abstract: An electrostatic discharge (ESD) protection circuit protects a gate oxide of elements in an internal circuit against ESD. During an ESD test, if the sum of driving voltages of ESD protectors connected between a power pad and a ground pad is higher than the gate oxide breakdown voltage of elements in the internal circuit, the structure of the ESD protector is changed or another ESD protector is additionally provided so as to protect the gate oxide of the elements in the internal circuit against ESD.

Abstract: An electrostatic discharge (ESD) protection circuit protects a gate oxide of elements in an internal circuit against ESD. During an ESD test, if the sum of driving voltages of ESD protectors connected between a power pad and a ground pad is higher than the gate oxide breakdown voltage of elements in the internal circuit, the structure of the ESD protector is changed or another ESD protector is additionally provided so as to protect the gate oxide of the elements in the internal circuit against ESD.

Abstract: A circuit for protecting a semiconductor device from electrostatic discharge by protecting an internal circuit from electrostatic current flowing into an input/output pad includes a first discharge unit that discharges the electrostatic current to a first power supply line or a second power supply line. A second discharge unit protects the internal circuit from electrostaticity flowing from the input/output pad or the second power supply line. A power clamp unit discharges the electrostatic current, which is discharged to the first power supply line or the second power supply line by the first discharge unit, to the opposite power supply line. A trigger unit drives the first discharge unit and the power clamp unit with first and second detection voltages generated in response to a voltage drop of the discharged electrostatic current.

Abstract: An electrostatic discharge circuit includes a trigger section configured to detect voltage drops occurring by an electrostatic current transmitted to first and second voltage lines, and to provide pull-up and pull-down detection voltages, an auxiliary discharge section configured to operate by the pull-up and pull-down detection voltages, and to discharge the electrostatic current introduced through an input/output pad to the first and second voltage lines, a main discharge section configured to operate by the pull-down detection voltage, to electrically connecting the first and second voltage lines, and to discharge the electrostatic current, and a CDM discharge section configured to operate by the pull-down detection voltage, and to discharge the electrostatic current supplied from the input/output pad to an internal circuit.

Abstract: An electrostatic discharge device includes a first protection element including a MOS transistor type first diode, which provides a first capacitor including a first insulation layer, and provides a first path between an input/output pad and a power supply voltage line using the first diode, for discharging static electricity, a second protection element providing a second path between the input/output pad and a ground voltage line for discharging the static electricity, a trigger circuit including a resistor that is connected in series to the first capacitor, and a power clamp element providing a third path for discharging the static electricity between the power supply voltage line and the ground voltage line by a voltage applied to the resistor.

Abstract: An electrostatic discharge protection device includes a power supply line and a ground line. A voltage detection unit detects first and second detection voltages by forming an electrical connection between the power supply line and the ground line in response to alternating current of electrostatic current. A first transfer unit transfers the electrostatic current into the power supply line by forming an electrical connection between the input/output pad and the power supply line in response to the first detection voltage. A second transfer unit transfers the electrostatic current into the ground line by forming an electrical connection between the input/output pad and the ground line in response to the second detection voltage. A discharge unit discharges the electrostatic current flowing into the power supply line or the ground line by forming an electrical connection between the power supply line and the ground line in response to the second detection voltage.

Abstract: An electrostatic discharge (ESD) protection circuit protects a gate oxide of elements in an internal circuit against ESD. During an ESD test, if the sum of driving voltages of ESD protectors connected between a power pad and a ground pad is higher than the gate oxide breakdown voltage of elements in the internal circuit, the structure of the ESD protector is changed or another ESD protector is additionally provided so as to protect the gate oxide of the elements in the internal circuit against ESD.