Abstract: Provided are a charge trap memory device including a substrate and a gate structure including a charge trapping layer formed of a composite of nanoparticles, and a method of manufacturing the charge trap memory device.

Abstract: Disclosed herein are a core/shell nanocrystal and a method for producing the same. More specifically, disclosed herein are a core/shell nanocrystal comprising a metal-doped shell nanocrystal, and a method for producing the same. The core/shell nanocrystal comprises a core nanocrystal and a metal-doped shell nanocrystal formed on the core nanocrystal. Based on the structure, the core/shell nanocrystal exhibits superior crystallinity and high luminescence efficiency, enables easy control of the shape and size and can be produced in a simple manner.

Abstract: Disclosed herein is a nanocrystal-metal oxide complex. The nanocrystal of the nanocrystal-metal oxide complex is substituted with two or more different types of surfactants which are miscible with a metal oxide precursor and enable maintenance of luminescent and electrical properties of the nanocrystal. The nanocrystal-metal oxide complex exhibits superior optical and chemical stability and secures high luminescent efficiency of the nanocrystal. Accordingly, when the nanocrystal-metal oxide complex is used as a luminescent material of an electroluminescent device, it can improve luminescent efficiency and reliability of products. Further disclosed herein is a method for preparing the nanocrystal-metal oxide complex.

Abstract: A light emitting diode device includes a light emitting diode chip and a nanocrystal-metal oxide monolith having a nanocrystal-metal oxide composite disposed on a light emitting surface of the light emitting diode chip

Abstract: Disclosed herein are a nanocrystal, a method for preparing the nanocrystal, and an electronic device comprising the nanocrystal. The nanocrystal comprises a semiconductor nanocrystal core, a non-semiconductor buffer layer surrounding the semiconductor nanocrystal core, and a shell surrounding the buffer layer.

Abstract: Disclosed herein is a method for the preparation of metal phosphide nanocrystals using a phosphite compound as a phosphorous precursor. More specifically, disclosed herein is a method for preparing metal phosphide nanocrystals by reacting a metal precursor with a phosphite compound in a solvent. A method is also provided for passivating a metal phosphide layer on the surface of a nanocrystal core by reacting a metal precursor with a phosphite compound in a solvent. The metal phosphide nanocrystals have uniform particle sizes and various shapes.

Abstract: Disclosed herein is a multilayer nanocrystal structure comprising a nanocrystal alloy core comprising two or more nanocrystals and including an alloy interlayer formed at an interface between the two or more nanocrystals, and one or more layers of nanocrystal shells formed sequentially on the surface of the nanocrystal alloy core, wherein the nanocrystal shells each have different band gaps. The multilayer nanocrystal structure can be applied to various electronic devices owing to its advantages of high luminescence efficiency, superior optical stability, and superior chemical stability.

Abstract: Disclosed herein are a composite light-emitting material, which includes two or more light-emitting materials selected from an inorganic phosphor, a semiconductor nanocrystal and an organic dye in which the surfaces of the two or more light-emitting materials are coated; and a light-emitting device comprising the same, so as to improve the luminous efficiency and lifetime.

Abstract: Disclosed herein are a semiconductor nanocrystal-metal complex and a method for preparing the same. The semiconductor nanocrystal-metal complex includes a semiconductor nanocrystal and one or more metal particles bound to the semiconductor nanocrystal. The semiconductor nanocrystal-metal complex exhibits excellent photocurrent characteristics and an improved binding force, in addition to the characteristics of semiconductor nanocrystals, thus broadening the applicability of the semiconductor nanocrystal. The semiconductor nanocrystal-metal complex can be at room temperature without involving complicated steps.

Abstract: Provided are a charge trap memory device including a substrate and a gate structure including a charge trapping layer formed of a composite of nanoparticles, and a method of manufacturing the charge trap memory device.