Patents by Inventor Jung-Geun Jhin

Jung-Geun Jhin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240347675
    Abstract: There is provided a micro-LED device having high applicability to fluid-based assembly technology, which includes: an n-type semiconductor layer; an active layer disposed on the n-type semiconductor layer; a p-type semiconductor layer disposed on the active layer; an insulating layer surrounding at least the outer circumferential surface of the active layer; and a multilayer electrode part disposed at the outer circumferential surface of the insulating layer.
    Type: Application
    Filed: January 12, 2022
    Publication date: October 17, 2024
    Applicant: ADVANCED VIEW TECHNOLOGY
    Inventors: Jung-Geun JHIN, Jae-Kyun KIM
  • Patent number: 8470519
    Abstract: Disclosed is a method of removing a photoresist pattern, which includes radiating light onto a substrate having a photoresist pattern formed thereon and implanted with a predetermined dopant so that the temperature of the substrate is increased to be equal to or higher than a temperature able to remove the photoresist pattern, and by which the photoresist pattern formed on the substrate can be almost completely removed using a simple process for radiating light onto the substrate so that the temperature of the substrate is increased to be equal to or higher than a temperature able to the photoresist pattern.
    Type: Grant
    Filed: February 10, 2011
    Date of Patent: June 25, 2013
    Assignee: Korea University Research and Business Foundation
    Inventors: Dong-Jin Byun, Sam-Seok Jang, Bum-Joon Kim, Jung-Geun Jhin, Sang-Il Kim, Do-Han Lee
  • Patent number: 8294167
    Abstract: The present invention relates to a light emitting diode with high electrostatic discharge and a fabrication method thereof, and more specifically to a light emitting diode comprising a first electrode layer provided over a upper surface of a first semiconductor layer and a upper surface of a second semiconductor layer; a transparent electrode layer formed on the upper surface of the second semiconductor layer, spaced from the first electrode layer; and a second electrode layer provided on a upper surface of the transparent electrode layer. With the present invention, there is provided a light emitting diode element with resistance against electrostatic discharge and with high reliability being strong against electrical impact, by selecting a structure arranging a form of an electrode differently from a conventional electrode.
    Type: Grant
    Filed: January 15, 2008
    Date of Patent: October 23, 2012
    Assignee: Korea Photonics Technology Institute
    Inventors: Jong-Hyeob Baek, Sang-Mook Kim, Sang-Hern Lee, Seung-Jae Lee, Jung-Geun Jhin, Yoon-Seok Kim, Hong-Seo Yom, Young-Moon Yu
  • Publication number: 20110200951
    Abstract: Disclosed is a method of removing a photoresist pattern, which includes radiating light onto a substrate having a photoresist pattern formed thereon and implanted with a predetermined dopant so that the temperature of the substrate is increased to be equal to or higher than a temperature able to remove the photoresist pattern, and by which the photoresist pattern formed on the substrate can be almost completely removed using a simple process for radiating light onto the substrate so that the temperature of the substrate is increased to be equal to or higher than a temperature able to the photoresist pattern.
    Type: Application
    Filed: February 10, 2011
    Publication date: August 18, 2011
    Applicant: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
    Inventors: Dong-Jin Byun, Sam-Seok Jang, Bum-Joon Kim, Jung-Geun Jhin, Sang-Il Kim, Do-Han Lee
  • Patent number: 7977223
    Abstract: A method of forming a nitride semiconductor through ion implantation and an electronic device including the same are disclosed. In the method, an ion implantation region composed of a line/space pattern is formed on a substrate at an ion implantation dose of more than 1E17 ions/cm2 to 5E18 ions/cm2 or less and an ion implantation energy of 30˜50 keV, and a metal nitride thin film is grown on the substrate by epitaxial lateral overgrowth, thereby decreasing lattice defects in the metal nitride thin film. Thus, the electronic device has improved efficiency.
    Type: Grant
    Filed: April 28, 2009
    Date of Patent: July 12, 2011
    Assignee: Korea University Industrial & Academic Collaboration Foundation
    Inventors: Dong-Jin Byun, Bum-Joon Kim, Jung-Geun Jhin, Jong-Hyeob Baek
  • Publication number: 20100295087
    Abstract: The present invention relates to a light emitting diode with high electrostatic discharge and a fabrication method thereof, and more specifically to a light emitting diode comprising a first electrode layer provided over a upper surface of a first semiconductor layer and a upper surface of a second semiconductor layer; a transparent electrode layer formed on the upper surface of the second semiconductor layer, spaced from the first electrode layer; and a second electrode layer provided on a upper surface of the transparent electrode layer. With the present invention, there is provided a light emitting diode element with resistance against electrostatic discharge and with high reliability being strong against electrical impact, by selecting a structure arranging a form of an electrode differently from a conventional electrode.
    Type: Application
    Filed: January 15, 2008
    Publication date: November 25, 2010
    Applicant: KOREA PHOTONICS TECHNOLOGY INSTITUTE
    Inventors: Jong-Hyeob Baek, Sang-Mook Kim, Sang-Hern Lee, Seung-Jae Lee, Jung-Geun Jhin, Yoon-Seok Kim, Hong-Seo Yom, Young-Moon Yu
  • Publication number: 20100065865
    Abstract: A method of forming a nitride semiconductor through ion implantation and an electronic device including the same are disclosed. In the method, an ion implantation region composed of a line/space pattern is formed on a substrate at an ion implantation dose of more than 1E17 ions/cm2 to 5E18 ions/cm2 or less and an ion implantation energy of 30˜50 keV, and a metal nitride thin film is grown on the substrate by epitaxial lateral overgrowth, thereby decreasing lattice defects in the metal nitride thin film. Thus, the electronic device has improved efficiency.
    Type: Application
    Filed: April 28, 2009
    Publication date: March 18, 2010
    Applicant: Korea University Industrial & Academic Collaboration Foundation
    Inventors: Dong-Jin BYUN, Bum-Joon Kim, Jung-Geun Jhin, Jong-Hyeob Baek