Patents by Inventor Jung-Geun Park

Jung-Geun Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160162686
    Abstract: Disclosed are methods for verifying the integrity of a dynamic code using a hash and for generating a hash registry for the verification. Provided is the method for generating a hash registry for verification of the integrity of a dynamic code using a hash, comprising: a step for setting a security tag only for a specific function which is a part of program and requires security; a binary generation step for generating a binary by compiling a source code including at least one function to which the security tag is applied; a hash code extraction step for extracting a hash code for a code block of the specific function, if the binary is searched and the security tag is detected; and a hash registry generation step for generating a hash registry including the hash codes for at least one function generated in the has code extraction step.
    Type: Application
    Filed: August 11, 2014
    Publication date: June 9, 2016
    Inventors: Jae Min NAM, Jung Geun PARK, Jun Ho HONG, Jun Seok OH, Jung Soo KIM
  • Patent number: 9158899
    Abstract: Provided is a terminal apparatus with a DRM decoding function and a DRM decoding method in a terminal apparatus. The terminal apparatus with a DRM decoding function comprises a native unit which is provided with a local file memory for storing DRM media content data and an application program for driving a media device player using an operating system; and a DRM decoding unit which reads the DRM media content data from the local file memory using a URL path for web server, when it is required from the application program to reproduce the DRM media content data, and decodes the read DRM media content data, and provides the decoded DRM media content data to the media device player. Therefore, it is possible to reproduce the DRM media content data in the terminal apparatus without the exclusive DRM decoding module.
    Type: Grant
    Filed: November 1, 2012
    Date of Patent: October 13, 2015
    Assignee: INKA ENTWORKS, INC.
    Inventors: Sung Min Ahn, Jung Geun Park, Jin Seon Hong, Woon Sang An, Sung Woo Lee
  • Publication number: 20140123297
    Abstract: Provided is a terminal apparatus with a DRM decoding function and a DRM decoding method in a terminal apparatus. The terminal apparatus with a DRM decoding function comprises a native unit which is provided with a local file memory for storing DRM media content data and an application program for driving a media device player using an operating system; and a DRM decoding unit which reads the DRM media content data from the local file memory using a URL path for web server, when it is required from the application program to reproduce the DRM media content data, and decodes the read DRM media content data, and provides the decoded DRM media content data to the media device player. Therefore, it is possible to reproduce the DRM media content data in the terminal apparatus without the exclusive DRM decoding module.
    Type: Application
    Filed: November 1, 2012
    Publication date: May 1, 2014
    Applicant: INKA ENTWORKS, INC.
    Inventors: Sung Min AHN, Jung Geun PARK, Jin Seon HONG, Woon Sang AN, Sung Woo LEE
  • Patent number: 8691649
    Abstract: In methods of manufacturing a recessed channel array transistor, a recess may be formed in an active region of a substrate. A plasma oxidation process may be performed on the substrate to form a preliminary gate oxide layer on an inner surface of the recess and an upper surface of the substrate. Moistures may be absorbed in a surface of the preliminary gate oxide layer to form a gate oxide layer. A gate electrode may be formed on the gate oxide layer to fill up the recess. Source/drain regions may be formed in an upper surface of the substrate at both sides of the gate electrode. Thus, the oxide layer may have a uniform thickness distribution and a dense structure.
    Type: Grant
    Filed: June 2, 2011
    Date of Patent: April 8, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tai-Su Park, Jung-Sup Oh, Gun-Joong Lee, Jung-Soo An, Dong-Kyu Lee, Jung-Geun Park, Jeong-Do Ryu, Dong-Chan Kim, Seong-Hoon Jeong, Si-Young Choi, Yu-Gyun Shin, Jong-Ryeol Yoo, Jong-Hoon Kang
  • Publication number: 20110237037
    Abstract: In methods of manufacturing a recessed channel array transistor, a recess may be formed in an active region of a substrate. A plasma oxidation process may be performed on the substrate to form a preliminary gate oxide layer on an inner surface of the recess and an upper surface of the substrate. Moistures may be absorbed in a surface of the preliminary gate oxide layer to form a gate oxide layer. A gate electrode may be formed on the gate oxide layer to fill up the recess. Source/drain regions may be formed in an upper surface of the substrate at both sides of the gate electrode. Thus, the oxide layer may have a uniform thickness distribution and a dense structure.
    Type: Application
    Filed: June 2, 2011
    Publication date: September 29, 2011
    Inventors: Tai-Su Park, Jung-Sup Oh, Gun-Joong Lee, Jung-Soo An, Dong-Kyu Lee, Jung-Geun Park, Jeong-Do Ryu, Dong-Chan Kim, Seong-Hoon Jeong, Si-Young Choi, Yu-Gyun Shin, Jong-Ryeol Yoo, Jong-Hoon Kang