Patents by Inventor Jung Gu HAN

Jung Gu HAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11437610
    Abstract: Provided are a high-capacity secondary battery including a cathode including an over-lithiated oxide cathode material or a Ni-rich cathode material; a lithium anode (Li anode); and an electrolyte including a superoxide dismutase mimic catalyst (SODm).
    Type: Grant
    Filed: April 30, 2020
    Date of Patent: September 6, 2022
    Assignee: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Hyun-Kon Song, Nam-Soon Choi, Chihyun Hwang, Jung-Gu Han
  • Publication number: 20220209299
    Abstract: A non-aqueous electrolyte solution for a lithium secondary battery and a lithium secondary battery including the same are disclosed herein. In some embodiments, a non-aqueous electrolyte solution includes a lithium salt, an organic solvent, and a compound represented by Formula 1 as an additive. A lithium secondary battery including the non-aqueous electrolyte solution has improved high-rate charge and discharge characteristics at high temperature.
    Type: Application
    Filed: November 13, 2020
    Publication date: June 30, 2022
    Applicant: LG Energy Solution, Ltd.
    Inventors: Hyun Yeong Lee, Chul Haeng Lee, Young Min Lim, Jung Min Lee, Chul Eun Yeom, Jung Gu Han
  • Publication number: 20200350556
    Abstract: Provided are a high-capacity secondary battery including a cathode including an over-lithiated oxide cathode material or a Ni-rich cathode material; a lithium anode (Li anode); and an electrolyte including a superoxide dismutase mimic catalyst (SODm).
    Type: Application
    Filed: April 30, 2020
    Publication date: November 5, 2020
    Inventors: Hyun-Kon SONG, Nam-Soon CHOI, Chihyun HWANG, Jung-Gu HAN
  • Patent number: 9786558
    Abstract: Semiconductor devices are provided. A semiconductor device includes a bit line structure and a contact plug. The contact plug is adjacent a sidewall of the bit line structure and is on a sloped surface of the bit line structure. Moreover, in some embodiments, a level of the sloped surface of the bit line structure becomes lower as the sloped surface approaches the sidewall of the bit line structure.
    Type: Grant
    Filed: June 22, 2016
    Date of Patent: October 10, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung-Eun Kim, Hoon Jeong, Jae-Hyun Kim, Dong-Won Lee, Jung-Gu Han, Ji-Hye Hwang
  • Publication number: 20160300763
    Abstract: Semiconductor devices are provided. A semiconductor device includes a bit line structure and a contact plug. The contact plug is adjacent a sidewall of the bit line structure and is on a sloped surface of the bit line structure. Moreover, in some embodiments, a level of the sloped surface of the bit line structure becomes lower as the sloped surface approaches the sidewall of the bit line structure.
    Type: Application
    Filed: June 22, 2016
    Publication date: October 13, 2016
    Inventors: Kyung-Eun Kim, Hoon Jeong, Jae-Hyun Kim, Dong-Won Lee, Jung-Gu Han, Ji-Hye Hwang
  • Patent number: 9418998
    Abstract: Semiconductor devices are provided. A semiconductor device includes a bit line structure and a contact plug. The contact plug is adjacent a sidewall of the bit line structure and is on a sloped surface of the bit line structure. Moreover, in some embodiments, a level of the sloped surface of the bit line structure becomes lower as the sloped surface approaches the sidewall of the bit line structure.
    Type: Grant
    Filed: September 26, 2014
    Date of Patent: August 16, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung-Eun Kim, Hoon Jeong, Jae-Hyun Kim, Dong-Won Lee, Jung-Gu Han, Ji-Hye Hwang
  • Publication number: 20150228574
    Abstract: Semiconductor devices are provided. A semiconductor device includes a bit line structure and a contact plug. The contact plug is adjacent a sidewall of the bit line structure and is on a sloped surface of the bit line structure. Moreover, in some embodiments, a level of the sloped surface of the bit line structure becomes lower as the sloped surface approaches the sidewall of the bit line structure.
    Type: Application
    Filed: September 26, 2014
    Publication date: August 13, 2015
    Inventors: Kyung-Eun Kim, Hoon Jeong, Jae-Hyun Kim, Dong-Won Lee, Jung-Gu Han, Ji-Hye Hwang
  • Publication number: 20140235761
    Abstract: A composition for a biomass film using a food byproduct including wheat bran or soybean hull and to a biomass film using the same and, more particularly, to a biomass film which is improved in processability, has high water resistance, oil resistance and pinhole resistance so as to be adapted for shopping bags, exhibits carbon reduction properties by use of a carbon neutral type plant food byproduct, and is increased in terms of degradability upon natural reclamation. The composition includes 100 parts by weight of a polyolefin-based resin, 50˜150 parts by weight of a powdery porous grassy biomass comprising one or more selected from the group consisting of wheat bran and soybean hull, 5˜20 parts by weight of an inorganic filler, 0.5˜3 parts by weight of a surface coating agent, and 1˜10 parts by weight of a liquid low-molecular-weight compound.
    Type: Application
    Filed: April 19, 2013
    Publication date: August 21, 2014
    Applicants: AU CO., LTD., CJ CHEILJEDANG CORPORATION
    Inventors: Chan Suk YOON, Jung Gu HAN, Young Sun YOU