Abstract: A domain-divided twisted nematic crystal cell and method of fabricating thereof. The method of the present invention comprises the steps of providing first and second substrates, forming a photo-alignment layer in each domain of the first substrate having two or more domains, wherein thicknesses of the photo-alignment layers corresponding to the domains are different from each other. A pretilt angle in each domain is formed by light irradiation on the photo-alignment layer, wherein the pretilt angles corresponding to the domains are different from each other due to the different thicknesses of the photo-alignment layer in different domains. The first and second substrates are positioned to face each other, and liquid crystal is injected between the first and second substrates.

Abstract: A domain-divided twisted nematic crystal cell and method of fabricating thereof. The method of the present invention comprises the steps of providing first and second substrates, forming a photo-alignment layer in each domain of the first substrate having two or more domains, wherein thicknesses of the photo-alignment layers corresponding to the domains are different from each other. A pretilt angle in each domain is formed by light irradiation on the photo-alignment layer, wherein the pretilt angles corresponding to the domains are different from each other due to the different thicknesses of the photo-alignment layer in different domains. The first and second substrates are positioned to face each other, and liquid crystal is injected between the first and second substrates.

Abstract: A method of forming an insulating layer pattern in a liquid crystal display which enables the formation of an insulating layer pattern on a substrate under a low temperature without the need of expensive equipment and complicated processes, wherein the formation speed of the insulating layer is accelerated. The method includes the steps of forming an organic thin layer containing silicon on an insulated substrate, exposing the thin layer to a gaseous ambience including, oxygen, generating a plurality of oxygen radicals and silicon radicals by applying ultraviolet rays to the thin layer using a mask having a predetermined pattern, forming an insulating layer by reacting the silicon radicals with the oxygen radicals, and defining an insulating layer pattern by removing a portion of the thin layer free of the ultraviolet rays.

Abstract: A method of manufacturing a liquid crystal cell in accordance with the present invention comprises the steps of forming a first alignment layer and a second alignment layer on a first substrate and a second substrate, forming a pretilt having an alignment, pretilt angle direction, and pretilt angle of the first alignment layer, forming a liquid crystal layer between the first substrate and second substrate after sealing them.

Abstract: A method for forming a silicon oxide film, SiO.sub.x, where X=1 or 2, on an electrode of a thin film transistor, e.g., for a liquid crystal display device. The method includes the steps of: forming an electrode on a substrate; forming an organic silicon-containing thin film on exposed surfaces of the electrode and the substrate; providing a gaseous atmosphere of oxygen or air about the electrode and the substrate; and irradiating the thin film with ultra violet light to produce radicals, including silicon radicals, from the thin film. The irradiation also produces oxygen radicals from the atmosphere. The silicon and oxygen radicals react to form the silicon oxide.